Patents by Inventor Svetlana Radovanov

Svetlana Radovanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11127557
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210287872
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210090845
    Abstract: Provided herein are approaches for controlling an ion beam using an electrostatic filter with curved electrodes. In some embodiments, a system may include an electrostatic filter receiving an ion beam, the filter including first and second electrodes disposed opposite sides of an ion beam line, each of the first and second electrodes having a central region between first and second ends, wherein a distance between a first outer surface of the first electrode and a second outer surface of the second electrode varies along an electrode length axis extending between the first and second ends. The system may further include a power supply in communication with the electrostatic filter, the power supply operable to supply a voltage and a current to the first and second electrodes, wherein the variable distance between the first and second outer surfaces causes the ion beam to converge or diverge.
    Type: Application
    Filed: September 19, 2019
    Publication date: March 25, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Robert C. Lindberg, Alexandre Likhanskii, Wayne LeBlanc, Frank Sinclair, Svetlana Radovanov
  • Publication number: 20200343071
    Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
    Type: Application
    Filed: July 8, 2020
    Publication date: October 29, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Bon-Woong Koo, Svetlana Radovanov, Frank Sinclair, You Chia Li, Peter Ewing, Ajdin Sarajlic, Christopher A. Rowland, Nunzio Carbone
  • Patent number: 10748738
    Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: August 18, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Svetlana Radovanov, Frank Sinclair, You Chia Li, Peter Ewing, Ajdin Sarajlic, Christopher A. Rowland, Nunzio Carbone
  • Patent number: 10468224
    Abstract: An apparatus may include an electrode assembly, the electrode assembly comprising a plurality of electrodes, arranged in a plurality of electrode pairs arranged to conduct an ion beam therethrough. A given electrode pair lies along a radius of an arc describing a nominal central ray trajectory, wherein a radius of a first electrode pair and an adjacent electrode pair define an angular spacing. The plurality of electrode pairs may define a plurality of angular spacings, wherein, in a first configuration, the plurality of angular spacings are not all equal. The apparatus may also include a power supply in communication with the EM, the power supply configured to independently supply voltage to the plurality of electrodes.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: November 5, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Svetlana Radovanov, Ana Samolov, Shengwu Chang, Frank Sinclair, Peter L. Kellerman
  • Publication number: 20190198283
    Abstract: An apparatus may include an electrode assembly, the electrode assembly comprising a plurality of electrodes, arranged in a plurality of electrode pairs arranged to conduct an ion beam therethrough. A given electrode pair lies along a radius of an arc describing a nominal central ray trajectory, wherein a radius of a first electrode pair and an adjacent electrode pair define an angular spacing. The plurality of electrode pairs may define a plurality of angular spacings, wherein, in a first configuration, the plurality of angular spacings are not all equal. The apparatus may also include a power supply in communication with the EM, the power supply configured to independently supply voltage to the plurality of electrodes.
    Type: Application
    Filed: April 9, 2018
    Publication date: June 27, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Ana Samolov, Shengwu Chang, Frank Sinclair, Peter L. Kellerman
  • Patent number: 10049861
    Abstract: Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface seals the volume of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: August 14, 2018
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Victor M. Benveniste, Svetlana Radovanov, Costel Biloiu
  • Patent number: 9536712
    Abstract: In one embodiment, a processing apparatus includes a plasma chamber configured to house a plasma comprising first ions and second ions. The apparatus may further include a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency. The apparatus may also include a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnet assembly is configured to generate a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: January 3, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: W. Davis Lee, Svetlana Radovanov, Peter F. Kurunczi
  • Patent number: 9514912
    Abstract: A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: December 6, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Costel Biloiu, Peter F. Kurunczi, Tyler Rockwell, Christopher Campbell, Vikram Singh, Svetlana Radovanov
  • Publication number: 20160071693
    Abstract: A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam.
    Type: Application
    Filed: October 24, 2014
    Publication date: March 10, 2016
    Inventors: Costel Biloiu, Peter F. Kurunczi, Tyler Rockwell, Christopher Campbell, Vikram Singh, Svetlana Radovanov
  • Publication number: 20160071704
    Abstract: Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface seals the volume of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.
    Type: Application
    Filed: November 16, 2015
    Publication date: March 10, 2016
    Inventors: Victor M. Benveniste, Svetlana Radovanov, Costel Biloiu
  • Publication number: 20150357167
    Abstract: In one embodiment, a processing apparatus includes a plasma chamber configured to house a plasma comprising first ions and second ions. The apparatus may further include a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency. The apparatus may also include a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnet assembly is configured to generate a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber.
    Type: Application
    Filed: June 9, 2014
    Publication date: December 10, 2015
    Inventors: W. Davis Lee, Svetlana Radovanov, Peter F. Kurunczi
  • Patent number: 9024273
    Abstract: An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.
    Type: Grant
    Filed: April 20, 2010
    Date of Patent: May 5, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Svetlana Radovanov, Christopher R. Hatem
  • Patent number: 8877654
    Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: November 4, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Helen Maynard, Vikram Singh, Svetlana Radovanov, Harold Persing
  • Patent number: 8742373
    Abstract: A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: June 3, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Ludovic Godet, Christopher R. Hatem
  • Patent number: 8604443
    Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: December 10, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Victor M. Benveniste, Svetlana Radovanov, James S. Buff
  • Patent number: 8519353
    Abstract: A method of controlling deflection of a charged particle beam in an electrostatic lens includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes disposed at unadjusted positions that are symmetric with respect to the central ray trajectory with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes is arranged at adjusted positions that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: August 27, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Peter L. Kellerman, Frank Sinclair, Robert C. Lindberg
  • Patent number: 8481960
    Abstract: A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: July 9, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Jason Schaller, Richard White, Kevin Verrier, James Blanchette, Bon-Woong Koo, Eric Hermanson, Kevin Daniels
  • Patent number: 8466431
    Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: June 18, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James S. Buff, Svetlana Radovanov, Bon-Woong Koo, Wilhelm Platow, Frank Sinclair, D. Jeffrey Lischer, Craig R. Chaney, Steven Borichevsky, Eric R. Cobb, Mayur Jagtap, Kenneth H. Purser, Victor Benveniste, Shardul S. Patel