Patents by Inventor Svetlana Radovanov
Svetlana Radovanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8604443Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.Type: GrantFiled: November 11, 2010Date of Patent: December 10, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Frank Sinclair, Victor M. Benveniste, Svetlana Radovanov, James S. Buff
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Patent number: 8519353Abstract: A method of controlling deflection of a charged particle beam in an electrostatic lens includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes disposed at unadjusted positions that are symmetric with respect to the central ray trajectory with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes is arranged at adjusted positions that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough.Type: GrantFiled: December 29, 2010Date of Patent: August 27, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Svetlana Radovanov, Peter L. Kellerman, Frank Sinclair, Robert C. Lindberg
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Patent number: 8481960Abstract: A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.Type: GrantFiled: June 23, 2011Date of Patent: July 9, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Svetlana Radovanov, Jason Schaller, Richard White, Kevin Verrier, James Blanchette, Bon-Woong Koo, Eric Hermanson, Kevin Daniels
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Patent number: 8466431Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.Type: GrantFiled: February 12, 2009Date of Patent: June 18, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: James S. Buff, Svetlana Radovanov, Bon-Woong Koo, Wilhelm Platow, Frank Sinclair, D. Jeffrey Lischer, Craig R. Chaney, Steven Borichevsky, Eric R. Cobb, Mayur Jagtap, Kenneth H. Purser, Victor Benveniste, Shardul S. Patel
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Patent number: 8357912Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.Type: GrantFiled: February 18, 2010Date of Patent: January 22, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Svetlana Radovanov, Bon-Woong Koo, Frank Sinclair, Victor Benveniste
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Publication number: 20130001414Abstract: A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.Type: ApplicationFiled: July 1, 2011Publication date: January 3, 2013Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Victor M. Benveniste, Frank Sinclair, Svetlana Radovanov, Bon-Woong Koo
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Publication number: 20120168637Abstract: A method of controlling deflection of a charged particle beam in an electrostatic lens includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes disposed at unadjusted positions that are symmetric with respect to the central ray trajectory with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes is arranged at adjusted positions that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough.Type: ApplicationFiled: December 29, 2010Publication date: July 5, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Svetlana Radovanov, Peter L. Kellerman, Frank Sinclair, Robert C. Lindberg
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Publication number: 20120168622Abstract: An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.Type: ApplicationFiled: December 29, 2010Publication date: July 5, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Victor M. Benveniste, Frank Sinclair, Svetlana Radovanov, Bon-Woong Koo
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Publication number: 20120145918Abstract: A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These on species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.Type: ApplicationFiled: December 10, 2010Publication date: June 14, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Svetlana RADOVANOV, Ludovic GODET, Christopher R. HATEM
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Publication number: 20120111834Abstract: A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.Type: ApplicationFiled: January 19, 2012Publication date: May 10, 2012Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Ludovic Godet, Timothy Miller, Svetlana Radovanov, Anthony Renau, Vikram Singh
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Patent number: 8101510Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.Type: GrantFiled: December 22, 2009Date of Patent: January 24, 2012Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Ludovic Godet, Timothy Miller, Svetlana Radovanov, Anthony Renau, Vikram Singh
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Publication number: 20120001087Abstract: A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.Type: ApplicationFiled: June 23, 2011Publication date: January 5, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Svetlana Radovanov, Jason Schaller, Richard M. White, Kevin R. Verrier, James Blanchette, Bon-Woong Koo, Eric d. Hermanson, Kevin Daniels
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Publication number: 20110256732Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.Type: ApplicationFiled: April 15, 2010Publication date: October 20, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATESInventors: Helen Maynard, Vikram Singh, Svetlana Radovanov, Harold Persing
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Publication number: 20110253902Abstract: An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.Type: ApplicationFiled: April 20, 2010Publication date: October 20, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Ludovic Godet, Svetlana Radovanov, Christopher R. Hatem
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Publication number: 20110114849Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.Type: ApplicationFiled: November 11, 2010Publication date: May 19, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , INC.Inventors: Frank Sinclair, Victor M. Benveniste, Svetlana Radovanov, James S. Buff
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Patent number: 7888653Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.Type: GrantFiled: January 2, 2009Date of Patent: February 15, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Svetlana Radovanov, Frank Sinclair, Victor M. Benveniste
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Publication number: 20100255665Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.Type: ApplicationFiled: December 22, 2009Publication date: October 7, 2010Inventors: Ludovic Godet, Timothy Miller, Svetlana Radovanov, Anthony Renau, Vikram Singh
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Publication number: 20100200768Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.Type: ApplicationFiled: February 12, 2009Publication date: August 12, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: JAMES BUFF, SVETLANA RADOVANOV, BON-WOONG KOO, WILHELM PLATOW, FRANK SINCLAIR, JEFFREY D. LISCHER, CRAIG CHANEY, STEVEN BORICHEVSKY, ERIC R. COBB, MAYUR JAGTAP, KENNETH PURSER, VICTOR M. BENVENISTE, SHARDUL S. PATEL
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Patent number: 7767977Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.Type: GrantFiled: April 3, 2009Date of Patent: August 3, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Ludovic Godet, Svetlana Radovanov, Timothy J. Miller
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Publication number: 20100171042Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.Type: ApplicationFiled: January 2, 2009Publication date: July 8, 2010Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. KELLERMAN, Svetlana Radovanov, Frank Sinclair, Victor M. Benveniste