Abstract: Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

Abstract: Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

Abstract: Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. In some embodiments, localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film, among other techniques. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract: Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. Localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract: Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.

Abstract: Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.

Abstract: Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

Abstract: Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process. The combination of hot implantation and nanosecond annealing reduces lattice damage of the substrates and facilitates a higher dopant concentration near the surface of the substrate to facilitate increased electrical contact with the substrate. An optional capping layer may be placed over the substrate to reduce outgassing of dopants or to control dopant implant depth.

Abstract: Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust.

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.