Abstract: An electronic device includes a first superconducting wire (with a first end and a second end) having a first threshold superconducting current. The device includes a second superconducting wire (with a first end and a second end) having a second threshold superconducting current that is less than the first threshold superconducting current. The second end of the first superconducting wire and the second end of the second superconducting wire are coupled to a common voltage node. A resistor is coupled between the first superconducting wire and the second superconducting wire, with a first end of the resistor coupled to the first end of the first superconducting wire and a second end of the resistor coupled to the first end of the second superconducting wire. The device includes a current source coupled with the first superconducting wire, and coupled with a combination of the resistor and the second superconducting wire.

Abstract: A semiconductor device has a package substrate, a system-on-chip (SoC) die, and a power management integrated circuit (PMIC) die, arranged in a vertical stack. The SoC die is disposed on a first surface of the package substrate, and the PMIC die is mechanically coupled to a second surface of the package substrate. The PMIC die is electrically coupled to the SOC die via first via connectors of the package substrate and configured to provide DC power to the SOC die via DC connectors electrically coupled to the via connectors of the package substrate. The PMIC die includes thin film inductors, corresponding to the DC connectors, on a surface of the PMIC die and located adjacent to the second surface of the package substrate.

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

Abstract: A system includes a first superconducting wire and a second superconducting wire connected in parallel. The system includes a first current source coupled to the first superconducting wire and configured to supply a first current in response to a trigger event. The system includes a second current source coupled in series with the parallel combination of the first superconducting wire and the second superconducting wire and configured to supply a second current. The superconducting wires are configured to, while receiving the second current, operate in a superconducting state in the absence of the first current. The first superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first current. The second superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first superconducting wire transitioning to the non-superconducting state.

Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

Abstract: A system includes a first superconducting wire and a second superconducting wire connected in parallel. The system includes a first current source coupled to the first superconducting wire and configured to supply a first current in response to a trigger event. The system includes a second current source coupled in series with the parallel combination of the first superconducting wire and the second superconducting wire and configured to supply a second current. The superconducting wires are configured to, while receiving the second current, operate in a superconducting state in the absence of the first current. The first superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first current. The second superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first superconducting wire transitioning to the non-superconducting state.

Abstract: An electronic device includes a first superconducting wire (with a first end and a second end) having a first threshold superconducting current. The device includes a second superconducting wire (with a first end and a second end) having a second threshold superconducting current that is less than the first threshold superconducting current. The second end of the first superconducting wire and the second end of the second superconducting wire are coupled to a common voltage node. A resistor is coupled between the first superconducting wire and the second superconducting wire, with a first end of the resistor coupled to the first end of the first superconducting wire and a second end of the resistor coupled to the first end of the second superconducting wire. The device includes a current source coupled with the first superconducting wire, and coupled with a combination of the resistor and the second superconducting wire.

Abstract: A method includes receiving input light having an input wavelength in a first optical resonator for causing resonance of the input light in the first optical resonator. The first optical resonator includes a non-linear optical medium. The method also includes converting at least a portion of the input light to a combination of first output light having a first output wavelength that is different from the input wavelength and second output light having a second output wavelength that is different from the input wavelength and the first output wavelength by passing the input light through the non-linear optical medium. The method further includes causing resonance of the first output light and the second output light in a second optical resonator. A portion of the first optical resonator is coupled to a portion of the second optical resonator.

Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. The device further includes a magnet that applies a magnetic field to the loop, which produces an expulsion current in the loop that travels toward the second electrode in the first channel and toward the first electrode in the second channel. For a range of current magnitudes, when the magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting circuitry. In one aspect, an electronic system includes: (1) a first circuit that includes a plurality of superconducting wires connected in parallel with one another, the plurality of superconducting wires including: (a) a first superconducting wire with a corresponding first threshold superconducting current; and (b) a second superconducting wire; (2) a second circuit connected in parallel to the first circuit; (3) a first current source coupled to the first superconducting wire and configured to selectively supply a first current; and (4) a second current source coupled to a combination of the first circuit and the second circuit and configured to supply a second current such that the plurality of superconducting wires operate in a superconducting state; where a combination of the first current and the second current exceeds the first threshold superconducting current.

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating photodetector circuitry. In one aspect, a photon detector system includes: (1) a first superconducting wire having a first threshold superconducting current; (2) a second superconducting wire having a second threshold superconducting current; (3) a resistor coupled to the first wire and the second wire; (4) current source(s) coupled to the first wire and configured to supply a current that is below the second threshold current; and (3) a second circuit coupled to the second wire. In response to receiving light at the first wire, the first wire transitions from a superconducting state to a non-superconducting state. In response to receiving light at the second wire while the first wire is in the non-superconducting state, the second wire transitions to a non-superconducting state, redirecting the first current to the second circuit.

Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. The device further includes a magnet that applies a magnetic field to the loop, which produces an expulsion current in the loop that travels toward the second electrode in the first channel and toward the first electrode in the second channel. For a range of current magnitudes, when the magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

Abstract: A photon source device includes a substrate and a first waveguide arranged on the substrate. The first waveguide is coupled with a first pair of reflectors defining a first resonant cavity in the first waveguide. The first resonant cavity is configured for outputting a first output wavelength and a second output wavelength. The first pair of reflectors include a partial reflector for the first output wavelength and a partial reflector for the second output wavelength. The photon source device further includes a second pair of reflectors defining a second resonant cavity that intersects with the first resonant cavity. The second resonant cavity is configured for receiving an input wavelength distinct from the first and the second output wavelengths. A first reflector and a second reflector of the second pair of reflectors have a first reflectance and a second reflectance for the input wavelength, respectively.

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting circuitry. In one aspect, an electronic system includes: (1) a first circuit that includes a plurality of superconducting wires connected in parallel with one another, the plurality of superconducting wires including: (a) a first superconducting wire with a corresponding first threshold superconducting current; and (b) a second superconducting wire; (2) a second circuit connected in parallel to the first circuit; (3) a first current source coupled to the first superconducting wire and configured to selectively supply a first current; and (4) a second current source coupled to a combination of the first circuit and the second circuit and configured to supply a second current such that the plurality of superconducting wires operate in a superconducting state; where a combination of the first current and the second current exceeds the first threshold superconducting current.

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating photodetector circuitry. In one aspect, a photon detector system includes: (1) a first superconducting wire having a first threshold superconducting current; (2) a second superconducting wire having a second threshold superconducting current; (3) a resistor coupled to the first wire and the second wire; (4) current source(s) coupled to the first wire and configured to supply a current that is below the second threshold current; and (3) a second circuit coupled to the second wire. In response to receiving light at the first wire, the first wire transitions from a superconducting state to a non-superconducting state. In response to receiving light at the second wire while the first wire is in the non-superconducting state, the second wire transitions to a non-superconducting state, redirecting the first current to the second circuit.

Abstract: Methods and systems for processing data communicated over a network. In one aspect, an exemplary embodiment includes processing a first group of network packets in a first processor which executes a first network protocol stack, where the first group of network packets are communicated through a first network interface port, and processing a second group of network packets in a second processor which executes a second network protocol stack, where the second group of network packets is communicated through the first network interface port. Other methods and systems are also described.

Abstract: Methods and apparatus' for performing IPSec processing on an IP packet being transmitted onto a network and being received from a network are described. The methods and apparatus' further described perform IPSec processing inline which results in a reduced number of transfers over the system bus, reduced utilization of system memory, and a reduced utilization of the system CPU. An IP packet which requires IPSec processing enters an acceleration device. In one embodiment, the acceleration device is coupled to a security policy database (SPD) and security association database (SAD). IPSec processing is performed at the acceleration device without sending the IP Packet to system memory for processing.

Abstract: Methods and apparatus' for performing SSL processing on an IP packet being transmitted onto a network and being received from a network are described. The methods and apparatus' further described performing SSL processing inline which results in a reduced number of transfers over the system bus, reduced utilization of system memory, and a reduced utilization of the system CPU. An IP packet that requires SSL processing enters an acceleration device. SSL processing is performed at the acceleration device without first sending the IP packet to system memory for processing.