Abstract: A semiconductor device includes channel layers disposed over a substrate, a source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the channel layers, and a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers. Each of the channel layers includes a semiconductor wire made of a core region, and one or more shell regions. The core region has an approximately square-shape cross section and a first shell of the one or more shells forms a first shell region of an approximately rhombus-shape cross section around the core region and is connected to an adjacent first shell region corresponding to a neighboring semiconductor wire.

Abstract: A semiconductor structure includes a plurality of first semiconductor layers interleaved with a plurality of second semiconductor layers. The first and second semiconductor layers have different material compositions. A dummy gate stack is formed over an uppermost first semiconductor layer. A first etching process is performed to remove portions of the second semiconductor layer that are not disposed below the dummy gate stack, thereby forming a plurality of voids. The first etching process has an etching selectivity between the first semiconductor layer and the second semiconductor layer. Thereafter, a second etching process is performed to enlarge the voids.

Abstract: A composite fiber having elastomer and method for making the same, and a substrate having the composite fiber and method for making the same are provided. The composite fiber includes a first composition and a second composition. The first composition is thermoplastic non-elastomer, and the second composition is thermoplastic elastomer (TPE). The second composition is in an amount of 5 to 70 weight % of the composite fiber. The first composition and the second composition are alternately distributed in a circumference of a cross-section of the composite fiber, and the length of the second composition is less than 50% of the total length of the circumference. The TPE can be dispersed uniformly and increase the adhesion between fibers, and the segmented fiber cross-section thereof further prevents the TPE from becoming too adhesive and affecting the processing during the fabrication of fibers and non-woven fabric substrates.

Abstract: The present invention relates to monoclonal antibodies against PrPSc protein. The anti-PrPSc mAbs produced of this invention can specifically detect PrPSc protein from normal mouse brain homogenates without pre-treatment with protease K, which may be used in developing a diagnostic method and kit for prion disease with high specificity and sensitivity.

Abstract: A composite fiber having elastomer and method for making the same, and a substrate having the composite fiber and method for making the same are provided. The composite fiber includes a first composition and a second composition. The first composition is thermoplastic non-elastomer, and the second composition is thermoplastic elastomer (TPE). The second composition is in an amount of 5 to 70 weight % of the composite fiber. The first composition and the second composition are alternately distributed in a circumference of a cross-section of the composite fiber, and the length of the second composition is less than 50% of the total length of the circumference. The TPE can be dispersed uniformly and increase the adhesion between fibers, and the segmented fiber cross-section thereof further prevents the TPE from becoming too adhesive and affecting the processing during the fabrication of fibers and non-woven fabric substrates.

Abstract: A composite fiber having elastomer and method for making the same, and a substrate having the composite fiber and method for making the same are provided. The composite fiber includes a first composition and a second composition. The first composition is thermoplastic non-elastomer, and the second composition is thermoplastic elastomer (TPE). The second composition is in an amount of 5 to 70 weight % of the composite fiber. The first composition and the second composition are alternately distributed in a circumference of a cross-section of the composite fiber, and the length of the second composition is less than 50% of the total length of the circumference. The TPE can be dispersed uniformly and increase the adhesion between fibers, and the segmented fiber cross-section thereof further prevents the TPE from becoming too adhesive and affecting the processing during the fabrication of fibers and non-woven fabric substrates.

Abstract: A method for producing microfine fibers having low resistance to deformation and high elasticity in accordance with the present invention comprises acts of: (a) providing polymer A and polymer B; (b) melting polymer A and polymer B to make a filament; (c) drawing the filament to make a staple fiber; (d) entangling the staple fiber to form a non-woven; (e) impregnating the non-woven with a impregnating agent; and may further have the acts of (f) impregnating the nonwoven with polyurethane; (g) coagulating the non-woven with dimethylformamide (DMF); (h) washing the non-woven with hot water; (i) impregnating the non-woven with a treatment agent; (j) abrading the non-woven to attain a split type mirofine fiber substrate; and (k) bonding a coating to the microfine fiber substrate. Therefore, the method can attain an artificial leather product having low resistance to deformation and high elasticity.

Abstract: A light emitting diode device is disclosed, and the light emitting diode device includes a base, a substrate, a lead frame, a chip, a first mixed layer and a second mixed layer. The first mixed layer and the second mixed layer respectively contain a glue and a thermal conductance insulating material, such as diamond carbon, diamond-like carbon or ceramic. The substrate and the lead frame are set on the base. The first mixed layer is formed between the chip and the substrate to fix the chip and strengthen heat dissipation. The second mixed layer is covered on the substrate and the chip to reduce the difference of the refraction index such that the total internal reflection angle is wider and the emitting efficiency is enhanced.

Abstract: A core-sheath fiber has a core and a sheath. The core comprises 0.1 to 10 wt % of carbon black pigment particles. The sheath surrounds the core preventing the core from being exposed. Because the carbon black pigment particles are mainly distributed in the core and the core is surrounded by the sheath with little or no carbon black pigment particles, a surface of the core-sheath fiber has low friction and electrical conductivity. Therefore, a lifetime of a punch needle used in machinery to produce a nonwoven is maintained and the nonwoven can undergo high frequency treatment to form artificial leather. Additionally, the sheath has little or no carbon black pigment particles, so the sheath is improved compatibility with polyurethane (PU) used for high frequency treatment.

Abstract: A method for producing microfine fibers having low resistance to deformation and high elasticity in accordance with the present invention comprises acts of: (a) providing polymer A and polymer B; (b) melting polymer A and polymer B to make a filament; (c) drawn the filament to make a staple fiber; (d) entangling the staple fiber to form a non-woven; (e) impregnating the non-woven with a impregnating agent; and may further comprise the acts of (f) using polyurethane impregnating the nonwoven with the impregnating agent or without the impregnating agent; (g) coagulating the non-woven with dimethylformamide (DMF); (h) washing the non-woven with hot water; (i) impregnating the non-woven with a treatment agent; (j) abrading the non-woven to attain a split type mirofine fiber substrate; and (k) bonding a coating to the microfine fiber substrate. Therefore, the method can attain an artificial leather product having low resistance to deformation and high elasticity.

Abstract: A light emitting diode device is disclosed, and the light emitting diode device includes a base, a substrate, a lead frame, a chip, a first mixed layer and a second mixed layer. The first mixed layer and the second mixed layer respectively contain a glue and a thermal conductance insulating material, such as diamond carbon, diamond-like carbon or ceramic. The substrate and the lead frame are set on the base. The first mixed layer is formed between the chip and the substrate to fix the chip and strengthen heat dissipation. The second mixed layer is covered on the substrate and the chip to reduce the difference of the refraction index such that the total internal reflection angle is wider and the emitting efficiency is enhanced.

Abstract: A method for forming a metal oxide layer by a nitric acid oxidation is disclosed. The method comprises steps of: a) providing a substrate, b) forming an ultra-thin silicon dioxide layer on the substrate, c) forming a metal layer on the silicon dioxide layer, d) oxidizing the metal layer into the metal oxide layer by the nitric acid oxidation, and e) annealing the metal oxide layer.

Abstract: A method of preparing high-k gate dielectrics by liquid phase anodic oxidation, which first produces a metallic film on the surface of a clean silicon substrate, next oxidizes the metallic film to form a metallic oxide as a gate oxidizing layer by liquid phase anodic oxidation, then promoting quality of the gate oxidizing layer by processing a step of thermal annealing. With this oxidation, a gate dielectric layer of high quality, high-k and ultrathin equivalent oxide thickness (EOT) can be produced, which can be integrated into a complementary metal oxide semiconductor (CMOS) production process directly.

Abstract: A method of high-k gate dielectrics prepared by liquid phase anodic oxidation, which first produces a metallic film on the surface of a clean silicon substrate, next to oxidize said metallic film to form a metallic oxide as a gate oxidizing layer by liquid phase anodic oxidation, then to promote quality of said gate oxidizing layer by processing a step of thermal annealing. With this oxidation, a gate dielectric layer of high quality, high-k and ultrathin equivalent oxide thickness (EOT) can be produced, which can be integrated to complementary metal oxide semiconductor (CMOS) process directly.