Abstract: A device includes a first semiconductor fin extending from a substrate, a second semiconductor fin extending from the substrate, a dielectric fin over the substrate, a first isolation region between the first semiconductor fin and the dielectric fin, and a second isolation region between the first semiconductor fin and the second semiconductor fin. The first semiconductor fin is disposed between the second semiconductor fin and the dielectric fin. The first isolation region has a first concentration of an impurity. The second isolation region has a second concentration of the impurity. The second concentration is less than the first concentration. A top surface of the second isolation region is disposed closer to the substrate than a top surface of the first isolation region.

Abstract: Systems and methods are provided for reducing damage caused by defects from a scribe lane of an integrated circuit, which may arise during or after a silicon wafer is singulated into separate integrated circuits. An integrated circuit may include an active area and a scribe lane. The scribe lane may include a crack energy release zone or a crack take-off zone, or both. The crack energy release zone may dissipate fracture energy in an event that a crack were to form in the scribe lane. The crack take-off zone may, in the event that the crack were to form in the scribe lane, guide the crack out of a surface of the integrated circuit in the crack take-off zone.

Abstract: Semiconductor device modules may include a semiconductor die and posts located laterally adjacent to the semiconductor die. A first encapsulant may laterally surround the semiconductor die and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on an active surface of the semiconductor die. A protective material may cover the electrical connectors. A second encapsulant may cover the protective material and the electrical connectors. The second encapsulant may be in direct contact with the first encapsulant, the electrical connectors, and the protective material.

Abstract: Semiconductor device modules may include a semiconductor die and posts located laterally adjacent to the semiconductor die. A first encapsulant may laterally surround the semiconductor die and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on an active surface of the semiconductor die. A protective material may cover the electrical connectors. A second encapsulant may cover the protective material and the electrical connectors. The second encapsulant may be in direct contact with the first encapsulant, the electrical connectors, and the protective material.

Abstract: Semiconductor device modules may include a redistribution layer and a first semiconductor die. A second semiconductor die may be located on the first semiconductor die. Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die. A first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on a second active surface of the second semiconductor die. A protective material may cover the electrical connectors. A second encapsulant may be located over the protective material and the electrical connectors. The second encapsulant may be in direct contact with the first encapsulant, the electrical connectors, and the protective material. Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die.

Abstract: Semiconductor device modules may include a redistribution layer and a first semiconductor die. A second semiconductor die may be located on the first semiconductor die. Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die. A first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on a second active surface of the second semiconductor die. A protective material may cover the electrical connectors. A second encapsulant may be located over the protective material and the electrical connectors. The second encapsulant may be in direct contact with the first encapsulant, the electrical connectors, and the protective material. Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die.

Abstract: Methods of making semiconductor device modules may involve forming holes in a sacrificial material and placing an electrically conductive material in the holes. The sacrificial material may be removed to expose posts of the electrically conductive material. A stack of semiconductor dice may be placed between at least two of the posts after removing the sacrificial material, one of the semiconductor dice of the stack including an active surface facing in a direction opposite a direction in which another active surface of another of the semiconductor dice of the stack. The posts and the stack of semiconductor dice may be at least laterally encapsulated in an encapsulant. Bond pads of the one of the semiconductor dice may be electrically connected to corresponding posts after at least laterally encapsulating the posts and the stack of semiconductor dice.

Abstract: Methods of making semiconductor device modules may involve forming holes in a sacrificial material and placing an electrically conductive material in the holes. The sacrificial material may be removed to expose posts of the electrically conductive material. A stack of semiconductor dice may be placed between at least two of the posts after removing the sacrificial material, one of the semiconductor dice of the stack including an active surface facing in a direction opposite a direction in which another active surface of another of the semiconductor dice of the stack. The posts and the stack of semiconductor dice may be at least laterally encapsulated in an encapsulant. Bond pads of the one of the semiconductor dice may be electrically connected to corresponding posts after at least laterally encapsulating the posts and the stack of semiconductor dice.