Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.

Abstract: Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.

Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

Abstract: Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.

Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.

Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

Abstract: Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.

Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

Abstract: Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.

Abstract: A disk drive is disclosed comprising a head actuated over a disk, the head comprising a fly height actuator (FHA). A fly height of the head is measured, and a closed-loop fly height control signal is generated based on the measured fly height and a target fly height. The target fly height is adjusted based on a delta generated based on a change in an environmental condition, and an FHA control signal is applied to the FHA based on the closed-loop fly height control signal.

Abstract: A data storage device is disclosed comprising a disk comprising a plurality of tracks, where each track comprises a plurality of servo sectors and at least one data segment between consecutive servo sectors. The data storage device further comprises a head actuated over the disk, the head comprising a laser configured to heat the disk during write operations based on a laser power. During a first revolution of the disk, the laser power is first increased over a first interval to cause at least part of the head to protrude toward a first data segment of the disk. After the first interval, the laser power is decreased and a fly height pattern is read from the first data segment to first measure a fly height of the head.

Abstract: Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

Abstract: A data storage device is disclosed comprising a disk, a head comprising a laser, and a fly height actuator (FHA) configured to actuate the head vertically over the disk based on an FHA setting. A first fly height of the head is measured at a first laser power setting, and a second fly height of the head is measured at a second laser power. A FHA write setting is generated based on a calibrated write laser power, the first and second fly height measurements, and a first function representing a nominal FHA delta setting between a read touchdown FHA setting and a write touchdown FHA setting relative to a delta in a fly height of the head due to a corresponding change in laser power applied to the laser, where the FHA write setting is applied to the FHA during the write operation.

Abstract: A disk drive is disclosed comprising a disk and a head comprising a laser configured to heat the disk while writing to the disk. Data is written to the disk using an operating laser power applied to the laser, and then the data is read from the disk to generate a read signal. A ramp interval is measured for an amplitude of the first read signal to ramp up to a first threshold.

Abstract: A disk drive is disclosed comprising a head actuated over a disk, and a dynamic fly height (DFH) actuator for controlling a fly height of the head over the disk in response to a DFH setting. A touchdown (TD) threshold is initialized, and the DFH setting that causes a TD signal to exceed the TD threshold is determined. The TD threshold is adjusted, and the DFH setting that causes the TD signal to exceed the adjusted TD threshold is determined. A slope of the DFH setting relative to the TD threshold is determined, and an operating TD threshold is determined in response to a change in the slope.

Abstract: A data storage device is disclosed comprising a head actuated over a disk, wherein the head comprises a laser configured to heat the disk while writing data to the disk. A temperature is measured, and a first input power is generated based on a first function of the measured temperature, wherein the first function compensates for a temperature dependent output power of the laser. A second input power is generated based on a second function of the measured temperature, wherein the second function compensates for a temperature dependent coercivity of the disk. The first input power is combined with the second input power to generate a write power applied to the laser while writing data to the disk.

Abstract: A data storage device is disclosed comprising a disk, a head comprising a laser configured to heat the disk while writing data to the disk, and a fly height actuator (FHA) configured to actuate the head vertically over the disk based on an FHA setting. A write laser power applied to the laser during a write operation is calibrated, a first fly height of the head is measured at a first laser power setting, and a second fly height of the head is measured at a second laser power setting different from the first laser power setting. A FHA write setting is generated based on the calibrated write laser power and the first and second fly height measurements, where the FHA write setting is applied to the FHA during the write operation.

Abstract: A disk drive is disclosed comprising a disk, a head comprising a laser operable to heat the disk while writing data to the disk, and a fly height actuator (FHA) operable to actuate the head vertically over the disk. A laser power applied to the laser during a write operation is calibrated, and a FHA write setting is generated for the FHA as a function of the calibrated laser power.

Abstract: A disk drive is disclosed comprising a disk and a head actuated over the disk, the head comprising a fly height actuator (FHA). The disk drive further comprises control circuitry including disk access circuitry, wherein during a calibration operation, the disk access circuitry is configured into a calibration mode that increases a heating of the head, and a fly height of the head is measured periodically to generate periodic fly height measurements that vary due to the heating of the head. A dynamic fly height (DFH) write profile is generated based on the periodic fly height measurements. During a write operation, the disk access circuitry is configured into a write mode and a DFH control signal is generated and applied to the FHA based on the DFH write profile.