Patents by Inventor Ta-Cheng Hsu
Ta-Cheng Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9362452Abstract: A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.Type: GrantFiled: June 14, 2013Date of Patent: June 7, 2016Assignee: EPISTAR CORPORATIONInventors: Shih Pang Chang, Ta Cheng Hsu, Min Hsun Hsieh
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Publication number: 20160118538Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.Type: ApplicationFiled: January 4, 2016Publication date: April 28, 2016Inventors: Ta-Cheng HSU, Ya-Lan Yan, Ying-Yong SU, Ching-Shian YEH, Chao-Shun Huang, Ya-Ju Lee
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Patent number: 9269855Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.Type: GrantFiled: December 4, 2013Date of Patent: February 23, 2016Assignee: EPISTAR CORPORATIONInventors: Chien-Kai Chung, Ya Lan Yang, Ting-Chia Ko, Tsun-Kai Ko, Jung-Min Hwang, Schang-Jing Hon, De-Shan Kuo, Chien-Fu Shen, Ta-Cheng Hsu, Min-Hsun Hsieh
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Patent number: 9231151Abstract: A light-emitting device comprises a textured substrate comprising a boundary and a plurality of textured structures within the boundary, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape and a bottom portion parallel to the top portion, the bottom portion having a second top-view shape, wherein the first top-view shape comprises a circle or ellipse and the second top-view shape comprises a polygon, wherein the first top-view shape and the second top-view shape overlap each other, and the textured structures are spaced apart from each other from a top view of the light-emitting device.Type: GrantFiled: September 14, 2012Date of Patent: January 5, 2016Assignee: EPISTAR CORPORATIONInventors: Ta-Cheng Hsu, Ya-Lan Yang, Ying-Yong Su, Ching-Shian Yeh, Chao-Shun Huang, Ya-Ju Lee
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Publication number: 20150207035Abstract: A light-emitting element includes a first light-emitting stacked structure including a first active layer; and a tunneling structure on the light-emitting stacked structure including a first doped semiconductor layer; a first undoped semiconductor layer on the first doped semiconductor layer; a second undoped semiconductor layer on the first undoped semiconductor layer; a third undoped semiconductor layer between the first undoped semiconductor layer and the second undoped semiconductor layer, wherein the third undoped semiconductor layer includes a material different from that of the first undoped semiconductor layer; and a second doped semiconductor layer on the second undoped semiconductor layer, having a different conductivity from that of the first doped semiconductor layer; wherein the tunneling structure has a polarization field enhanced by the third undoped semiconductor layer.Type: ApplicationFiled: January 17, 2014Publication date: July 23, 2015Applicant: EPISTAR CORPORATIONInventors: Miao-Chan TSAI, Benajmin LEUNG, Ta-Cheng HSU
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Patent number: 9024451Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.Type: GrantFiled: August 22, 2014Date of Patent: May 5, 2015Assignee: Epistar CorporationInventors: Hsin-Mao Liu, Min-Hsun Hsieh, Tzer-Perng Chen, Meng-Yuan Hong, Cheng Nan Han, Tsung-Xian Lee, Ta-Cheng Hsu, Chih-Chiang Lu
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Patent number: 8946736Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.Type: GrantFiled: December 31, 2012Date of Patent: February 3, 2015Assignee: Epistar CorporationInventors: Wei-Chih Peng, Ta-Cheng Hsu, Yu-Jiun Shen, Ching-Fu Tsai
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Publication number: 20140367692Abstract: A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.Type: ApplicationFiled: June 14, 2013Publication date: December 18, 2014Inventors: Shih Pang CHANG, Ta Cheng HSU, Min Hsun HSIEH
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Publication number: 20140361319Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.Type: ApplicationFiled: August 22, 2014Publication date: December 11, 2014Inventors: Hsin-Mao LIU, Min-Hsun HSIEH, Tzer-Perng CHEN, Meng-Yuan HONG, Cheng Nan HAN, Tsung-Xian LEE, Ta-Cheng HSU, Chih-Chiang LU
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Patent number: 8890114Abstract: A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the active layer; and a second electron blocking layer formed between the second semiconductor layer and the active layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.Type: GrantFiled: October 16, 2012Date of Patent: November 18, 2014Assignee: Epistar CorporationInventors: Sheng-Horng Yen, Ta-Cheng Hsu
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Publication number: 20140306253Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.Type: ApplicationFiled: April 7, 2014Publication date: October 16, 2014Applicant: EPISTAR CORPORATIONInventors: Min-Hsun Hsieh, Ta-Cheng Hsu, Meng-lan Tsai, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Ya-Ju Lee
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Patent number: 8816508Abstract: An integrated lighting apparatus includes at least a lighting device, a control device comprising an integrated circuit, and a connector that is used to electrically connect the lighting device and the control device. With the combination, the integrated circuit drives the lighting device in accordance with its various designed functionality, thus expands applications of the integrated lighting apparatus.Type: GrantFiled: July 20, 2011Date of Patent: August 26, 2014Assignee: Epistar CorporationInventors: Hsin-Mao Liu, Min-Hsun Hsieh, Tzer-Perng Chen, Meng-Yuan Hong, Cheng Nan Han, Tsung-Xian Lee, Ta-Cheng Hsu, Chih-Chiang Lu
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Patent number: 8791029Abstract: A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.Type: GrantFiled: August 12, 2008Date of Patent: July 29, 2014Assignee: Epistar CorporationInventors: Chiu-Lin Yao, Ta-Cheng Hsu, Min-Hsun Hsieh
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Patent number: 8772791Abstract: Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer.Type: GrantFiled: September 28, 2012Date of Patent: July 8, 2014Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Shih-Pang Chang, Hung-Chih Yang, Ta-Cheng Hsu
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Publication number: 20140103290Abstract: A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.Type: ApplicationFiled: October 16, 2012Publication date: April 17, 2014Applicant: Epistar CorporationInventors: Sheng-Horng YEN, Ta-Cheng Hsu, Yu-Jiun Shen
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Patent number: 8692270Abstract: A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.Type: GrantFiled: July 23, 2007Date of Patent: April 8, 2014Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Ta-Cheng Hsu, ML Tsai, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Ya-Ju Lee
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Publication number: 20140093991Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.Type: ApplicationFiled: December 4, 2013Publication date: April 3, 2014Applicant: Epistar CorporationInventors: Chien-Kai CHUNG, Ya Lan YANG, Ting-Chia KO, Tsun-Kai KO, Jung-Min HWANG, Schang-Jing HON, De-Shan KUO, Chien-Fu SHEN, Ta-Cheng HSU, Min-Hsun HSIEH
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Patent number: 8679874Abstract: This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.Type: GrantFiled: August 28, 2012Date of Patent: March 25, 2014Assignee: Epistar CorporationInventors: Chiu-Lin Yao, Ta-Cheng Hsu
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Patent number: 8648522Abstract: This disclosure provides a light-emitting device including a patterned substrate and the manufacturing method thereof. The patterned substrate has a plurality of depressions and/or extrusions for scattering light emitted from a light-emitting layer. Each of the plurality of depressions and/or extrusions comprises a top portion, a bottom portion, and a sidewall portion enclosing the top portion and the bottom portion, and at least part of the sidewall portion comprises a curve. In a preferred embodiment, the light-emitting device further comprises a rough surface formed on at least one of the top portion, the bottom portion, and the sidewall portion.Type: GrantFiled: August 20, 2010Date of Patent: February 11, 2014Assignee: Epistar CorporationInventors: Ta-Cheng Hsu, Ya-Lan Yang, Ying-Yong Su, Ching-Shian Yeh, Chao-Shun Huang, Ya-Ju Lee
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Patent number: 8623682Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.Type: GrantFiled: September 14, 2012Date of Patent: January 7, 2014Assignee: Epistar CorporationInventors: Chien-Kai Chung, Ta-Cheng Hsu, Jung-Min Hwang, Min-Hsun Hsieh, Ya-Lan Yang, De-Shan Kuo, Tsun-Kai Ko, Chien-Fu Shen, Ting-Chia Ko, Schang-Jing Hon