Patents by Inventor Ta-Cheng Hsu

Ta-Cheng Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9362452
    Abstract: A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: June 7, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Shih Pang Chang, Ta Cheng Hsu, Min Hsun Hsieh
  • Publication number: 20160118538
    Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 28, 2016
    Inventors: Ta-Cheng HSU, Ya-Lan Yan, Ying-Yong SU, Ching-Shian YEH, Chao-Shun Huang, Ya-Ju Lee
  • Patent number: 9269855
    Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: February 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Kai Chung, Ya Lan Yang, Ting-Chia Ko, Tsun-Kai Ko, Jung-Min Hwang, Schang-Jing Hon, De-Shan Kuo, Chien-Fu Shen, Ta-Cheng Hsu, Min-Hsun Hsieh
  • Patent number: 9231151
    Abstract: A light-emitting device comprises a textured substrate comprising a boundary and a plurality of textured structures within the boundary, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape and a bottom portion parallel to the top portion, the bottom portion having a second top-view shape, wherein the first top-view shape comprises a circle or ellipse and the second top-view shape comprises a polygon, wherein the first top-view shape and the second top-view shape overlap each other, and the textured structures are spaced apart from each other from a top view of the light-emitting device.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: January 5, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Ta-Cheng Hsu, Ya-Lan Yang, Ying-Yong Su, Ching-Shian Yeh, Chao-Shun Huang, Ya-Ju Lee
  • Publication number: 20150207035
    Abstract: A light-emitting element includes a first light-emitting stacked structure including a first active layer; and a tunneling structure on the light-emitting stacked structure including a first doped semiconductor layer; a first undoped semiconductor layer on the first doped semiconductor layer; a second undoped semiconductor layer on the first undoped semiconductor layer; a third undoped semiconductor layer between the first undoped semiconductor layer and the second undoped semiconductor layer, wherein the third undoped semiconductor layer includes a material different from that of the first undoped semiconductor layer; and a second doped semiconductor layer on the second undoped semiconductor layer, having a different conductivity from that of the first doped semiconductor layer; wherein the tunneling structure has a polarization field enhanced by the third undoped semiconductor layer.
    Type: Application
    Filed: January 17, 2014
    Publication date: July 23, 2015
    Applicant: EPISTAR CORPORATION
    Inventors: Miao-Chan TSAI, Benajmin LEUNG, Ta-Cheng HSU
  • Patent number: 9024451
    Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: May 5, 2015
    Assignee: Epistar Corporation
    Inventors: Hsin-Mao Liu, Min-Hsun Hsieh, Tzer-Perng Chen, Meng-Yuan Hong, Cheng Nan Han, Tsung-Xian Lee, Ta-Cheng Hsu, Chih-Chiang Lu
  • Patent number: 8946736
    Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: February 3, 2015
    Assignee: Epistar Corporation
    Inventors: Wei-Chih Peng, Ta-Cheng Hsu, Yu-Jiun Shen, Ching-Fu Tsai
  • Publication number: 20140367692
    Abstract: A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.
    Type: Application
    Filed: June 14, 2013
    Publication date: December 18, 2014
    Inventors: Shih Pang CHANG, Ta Cheng HSU, Min Hsun HSIEH
  • Publication number: 20140361319
    Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.
    Type: Application
    Filed: August 22, 2014
    Publication date: December 11, 2014
    Inventors: Hsin-Mao LIU, Min-Hsun HSIEH, Tzer-Perng CHEN, Meng-Yuan HONG, Cheng Nan HAN, Tsung-Xian LEE, Ta-Cheng HSU, Chih-Chiang LU
  • Patent number: 8890114
    Abstract: A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the active layer; and a second electron blocking layer formed between the second semiconductor layer and the active layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.
    Type: Grant
    Filed: October 16, 2012
    Date of Patent: November 18, 2014
    Assignee: Epistar Corporation
    Inventors: Sheng-Horng Yen, Ta-Cheng Hsu
  • Publication number: 20140306253
    Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.
    Type: Application
    Filed: April 7, 2014
    Publication date: October 16, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Min-Hsun Hsieh, Ta-Cheng Hsu, Meng-lan Tsai, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Ya-Ju Lee
  • Patent number: 8816508
    Abstract: An integrated lighting apparatus includes at least a lighting device, a control device comprising an integrated circuit, and a connector that is used to electrically connect the lighting device and the control device. With the combination, the integrated circuit drives the lighting device in accordance with its various designed functionality, thus expands applications of the integrated lighting apparatus.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: August 26, 2014
    Assignee: Epistar Corporation
    Inventors: Hsin-Mao Liu, Min-Hsun Hsieh, Tzer-Perng Chen, Meng-Yuan Hong, Cheng Nan Han, Tsung-Xian Lee, Ta-Cheng Hsu, Chih-Chiang Lu
  • Patent number: 8791029
    Abstract: A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.
    Type: Grant
    Filed: August 12, 2008
    Date of Patent: July 29, 2014
    Assignee: Epistar Corporation
    Inventors: Chiu-Lin Yao, Ta-Cheng Hsu, Min-Hsun Hsieh
  • Patent number: 8772791
    Abstract: Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: July 8, 2014
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Shih-Pang Chang, Hung-Chih Yang, Ta-Cheng Hsu
  • Publication number: 20140103290
    Abstract: A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.
    Type: Application
    Filed: October 16, 2012
    Publication date: April 17, 2014
    Applicant: Epistar Corporation
    Inventors: Sheng-Horng YEN, Ta-Cheng Hsu, Yu-Jiun Shen
  • Patent number: 8692270
    Abstract: A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.
    Type: Grant
    Filed: July 23, 2007
    Date of Patent: April 8, 2014
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Ta-Cheng Hsu, ML Tsai, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Ya-Ju Lee
  • Publication number: 20140093991
    Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
    Type: Application
    Filed: December 4, 2013
    Publication date: April 3, 2014
    Applicant: Epistar Corporation
    Inventors: Chien-Kai CHUNG, Ya Lan YANG, Ting-Chia KO, Tsun-Kai KO, Jung-Min HWANG, Schang-Jing HON, De-Shan KUO, Chien-Fu SHEN, Ta-Cheng HSU, Min-Hsun HSIEH
  • Patent number: 8679874
    Abstract: This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: March 25, 2014
    Assignee: Epistar Corporation
    Inventors: Chiu-Lin Yao, Ta-Cheng Hsu
  • Patent number: 8648522
    Abstract: This disclosure provides a light-emitting device including a patterned substrate and the manufacturing method thereof. The patterned substrate has a plurality of depressions and/or extrusions for scattering light emitted from a light-emitting layer. Each of the plurality of depressions and/or extrusions comprises a top portion, a bottom portion, and a sidewall portion enclosing the top portion and the bottom portion, and at least part of the sidewall portion comprises a curve. In a preferred embodiment, the light-emitting device further comprises a rough surface formed on at least one of the top portion, the bottom portion, and the sidewall portion.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: February 11, 2014
    Assignee: Epistar Corporation
    Inventors: Ta-Cheng Hsu, Ya-Lan Yang, Ying-Yong Su, Ching-Shian Yeh, Chao-Shun Huang, Ya-Ju Lee
  • Patent number: 8623682
    Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: January 7, 2014
    Assignee: Epistar Corporation
    Inventors: Chien-Kai Chung, Ta-Cheng Hsu, Jung-Min Hwang, Min-Hsun Hsieh, Ya-Lan Yang, De-Shan Kuo, Tsun-Kai Ko, Chien-Fu Shen, Ting-Chia Ko, Schang-Jing Hon