Patents by Inventor Ta-Cheng Lien
Ta-Cheng Lien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240134268Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Inventors: Chien-Cheng Chen, Huan-Ling Lee, Ta-Cheng Lien, Chia-Jen Chen, Hsin-Chang Lee
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Patent number: 11960201Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.Type: GrantFiled: May 15, 2023Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Pei-Cheng Hsu, Chun-Fu Yang, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20240085781Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Hao-Ping CHENG, Ta-Cheng LIEN
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Publication number: 20240077804Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Chien-Cheng CHEN, Shih Ju HUANG, Pei-Cheng HSU, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20240069431Abstract: In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.Type: ApplicationFiled: February 16, 2023Publication date: February 29, 2024Inventors: Wei-Che HSIEH, Chien-Cheng Chen, Ping-Hsun Lin, Ta-Cheng Lien, Hsin-Chang Lee
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Patent number: 11914286Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.Type: GrantFiled: April 4, 2022Date of Patent: February 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Amo Chen, Yun-Yue Lin, Ta-Cheng Lien, Hsin-Chang Lee, Chih-Cheng Lin, Jeng-Horng Chen
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Patent number: 11906897Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.Type: GrantFiled: June 17, 2021Date of Patent: February 20, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Pei-Cheng Hsu, Yih-Chen Su, Chi-Kuang Tsai, Ta-Cheng Lien, Tzu Yi Wang, Jong-Yuh Chang, Hsin-Chang Lee
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Publication number: 20240053669Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a first absorber layer disposed on the capping layer, a first multilayer disposed over the first absorber layer, a second absorber layer disposed on the first multilayer layer, and a second multilayer, which is an uppermost layer of the reflective mask, disposed over the second absorber layer.Type: ApplicationFiled: March 20, 2023Publication date: February 15, 2024Inventors: Wen-Chang HSUEH, Ta-Cheng LIEN, Hsin-Chang LEE
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Patent number: 11899357Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.Type: GrantFiled: May 17, 2021Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Cheng Chen, Huan-Ling Lee, Ta-Cheng Lien, Chia-Jen Chen, Hsin-Chang Lee
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Publication number: 20240045317Abstract: A method includes forming a reflective multilayer over a substrate; depositing a first capping layer over the reflective multilayer, wherein the first capping layer is made of a ruthenium-containing material or a chromium-containing material; performing a treatment to the first capping layer to introduce nitrogen or fluorine into the first capping layer; forming an absorption layer over the first capping layer; and patterning the absorption layer.Type: ApplicationFiled: August 2, 2022Publication date: February 8, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang LEE, Ping-Hsun LIN, Pei-Cheng HSU, Hsuan-I WANG, Hung-Yi TSAI, Bo-Wei SHIH, Ta-Cheng LIEN
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Publication number: 20240045318Abstract: An extreme ultraviolet (EUV) mask includes a substrate, a reflective multilayer stack on the substrate, a diffusion barrier layer, a capping layer and a patterned absorber layer. The reflective multilayer stack comprises alternately stacked first layers and second layers. The diffusion barrier layer is on the reflective multilayer stack. The diffusion barrier layer has a composition different from compositions of the first layers and the second layers. The capping layer is on the diffusion barrier layer. The patterned absorber layer is on the reflective multilayer stack.Type: ApplicationFiled: August 3, 2022Publication date: February 8, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Wei-Hao LEE, Bo-Wei SHIH, Ta-Cheng LIEN
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Patent number: 11852965Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.Type: GrantFiled: May 26, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Hsin-Chang Lee
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Patent number: 11852969Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.Type: GrantFiled: June 29, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang Lee, Pei-Cheng Hsu, Hao-Ping Cheng, Ta-Cheng Lien
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Publication number: 20230408906Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.Type: ApplicationFiled: August 4, 2023Publication date: December 21, 2023Inventors: Pei-Cheng Hsu, Ping-Hsun Lin, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20230402283Abstract: A method for fabricating a mask is provided. The method includes depositing a target layer over a dielectric substrate; forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout; determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout; and using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.Type: ApplicationFiled: June 9, 2022Publication date: December 14, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Hung-Yi TSAI, Hao-Ping CHENG, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20230384693Abstract: A method of treating a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a treatment device. The surface of the reticle is treated in the treatment device by irradiating the surface of the reticle UV radiation while ozone fluid is over the surface of the reticle for a predetermined irradiation time. After the treatment, the reticle is transferred to an exposure device for lithography operation to generate a photo resist pattern on a wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is increased if the CDU does not satisfy a threshold CDU.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Inventors: Yih-Chen SU, Tzu-Yi WANG, Ta-Cheng LIEN
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Patent number: 11829076Abstract: A method of treating a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a treatment device. The surface of the reticle is treated in the treatment device by irradiating the surface of the reticle UV radiation while ozone fluid is over the surface of the reticle for a predetermined irradiation time. After the treatment, the reticle is transferred to an exposure device for lithography operation to generate a photo resist pattern on a wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is increased if the CDU does not satisfy a threshold CDU.Type: GrantFiled: November 28, 2022Date of Patent: November 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Chen Su, Tzu-Yi Wang, Ta-Cheng Lien
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Patent number: 11829062Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.Type: GrantFiled: October 8, 2020Date of Patent: November 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20230375910Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.Type: ApplicationFiled: August 7, 2023Publication date: November 23, 2023Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20230375911Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Inventors: Ping-Hsun LIN, Pei-Cheng HSU, Ching-Fang YU, Ta-Cheng LIEN, Chia-Jen CHEN, Hsin-Chang LEE