Abstract: A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.

Abstract: A method for bonding an integrated circuit device to a glass substrate is provided. The method comprises the following steps. First, a melting device is provided, and the melting device melts a predetermined portion of the glass substrate. Then, the integrated circuit device is bonded to the glass substrate without suffering from damages by sharp edges of the glass substrate.

Abstract: A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.

Abstract: A process for separating substrates in liquid crystal display is disclosed. The process for separating substrates in liquid crystal display includes step of providing a first substrate and a second substrate, wherein the first and second substrates being combined together by seal, forming a scribing line on the first substrate, and separating the first substrate into at least two parts along the scribing line by exerting air pressure upon the second substrate.

Abstract: A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.

Abstract: A process for separating substrates in liquid crystal display is disclosed. The process for separating substrates in liquid crystal display includes step of providing a first substrate and a second substrate, wherein the first and second substrates being combined together by seal, forming a scribing line on the first substrate, and separating the first substrate into at least two parts along the scribing line by exerting air pressure upon the second substrate.

Abstract: A method for bonding an integrated circuit device to a glass substrate is provided. The method comprises the following steps. First, a melting device is provided, and the melting device melts a predetermined portion of the glass substrate. Then, the integrated circuit device is bonded to the glass substrate without suffering from damages by sharp edges of the glass substrate.

Abstract: A method for separating a brittle material is provided. First, a brittle material, having a first surface and a second surface, is provided. Then, a reference line is scribed on a predetermined position of the first surface of the brittle material along a first direction by laser. Finally, a soft-breaker is provided, and the soft-breaker separates the brittle material along a second direction by strikes the second surface of the brittle material. Thus, the quality of the brittle material, separated based on the method of this invention, is maintained at a certain level so that the processes subsequent to the separation process are reduced.