Abstract: There are provided a pearl culture material containing at least one selected from the group consisting of a pearl nucleus and a mantle, and the at least one selected from the group consisting of a pearl nucleus and a mantle contains a protein having 10 EU/g or less of an endotoxin amount, a nucleus insertion method, and a pearl culture material composition.

Abstract: An object of the present invention is to provide a separation substrate having a high megakaryocyte blocking rate and a high platelet permeation rate, and a cell separation filter and a method for producing a platelet which use the same. The separation substrate of the present invention is a separation substrate including non-woven fabric for separating a platelet from a cell suspension containing a megakaryocyte and the platelet, in which an average pore diameter of the separation substrate is 2.0 ?m to 15.0 ?m, and a thickness of the separation substrate is 10 ?m to 500 ?m.

Abstract: An object of the present invention is to provide a medium with which hepatocytes can be cultured while a metabolic function thereof is maintained, a method of producing a hepatocyte using the above medium, and the hepatocyte that is obtained by the above method. According to the present invention, there is provided a medium for culturing a hepatocyte, containing one or more of a ROCK inhibitor, nicotinamide, and an analogous substance of the nicotinamide, in which a content of a serum component is less than 5% by volume, a content of an EGF receptor activating factor is less than 1 ng/mL, and a content of an ALK inhibitor is less than 0.1 ?mol/L.

Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method including: making a semiconductor device that is connected parallel to a load by a load cable, perform a switching operation; measuring common-mode current flowing through the load cable during the switching operation; and outputting an evaluation benchmark for radiated noise based on the common-mode current, and an evaluation apparatus are provided.

Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.

Abstract: There are provided a pearl culture material containing at least one selected from the group consisting of a pearl nucleus and a mantle, and the at least one selected from the group consisting of a pearl nucleus and a mantle contains a protein having 10 EU/g or less of an endotoxin amount, a nucleus insertion method, and a pearl culture material composition.

Abstract: Provided are a pearl culture material in which at least one selected from the group consisting of a pearl nucleus and a mantle piece is coated with a protein containing a repeating sequence of GXY triplets which may be separated by one or more amino acids, and one or more RGD motifs, and having a polydispersity of less than 20; and a coating composition including the protein.

Abstract: An object of the present invention is to provide a separation substrate having a high megakaryocyte blocking rate and a high platelet permeation rate, and a cell separation filter and a method for producing a platelet which use the same. The separation substrate of the present invention is a separation substrate including a porous membrane for separating a platelet from a cell suspension containing a megakaryocyte and the platelet, in which an average pore diameter of the separation substrate is 2.0 ?m to 12.0 ?m, and the separation substrate is formed of at least one resin selected from the group consisting of a polysulfone resin and a polyvinylidene fluoride resin.

Abstract: An object of the present invention is to provide a separation substrate having a high megakaryocyte blocking rate and a high platelet permeation rate, and a cell separation filter and a method for producing a platelet which use the same. The separation substrate of the present invention is a separation substrate including non-woven fabric for separating a platelet from a cell suspension containing a megakaryocyte and the platelet, in which an average pore diameter of the separation substrate is 2.0 ?m to 15.0 ?m, and a thickness of the separation substrate is 10 ?m to 500 ?m.

Abstract: An object of the present invention is to provide a method for efficiently separating megakaryocytes and platelets produced from the megakaryocytes, and a platelet separation kit for efficiently separating megakaryocytes and platelets produced from the megakaryocytes. According to the present invention, a method for separating megakaryocytes and platelets, including an incorporation step of incorporating magnetic fine particles into at least megakaryocytes; a culture step of culturing the megakaryocytes in a culture solution to produce platelets before and/or after the incorporation step; a magnetic field application step of applying a magnetic field to the culture solution after the incorporation step and the culture step; and a recovery step of recovering the culture solution after the magnetic field application step, is provided.

Abstract: An object of the present invention is to provide a method for efficiently separating megakaryocytes and platelets produced from the megakaryocytes, and an instrument for efficiently separating megakaryocytes and platelets produced from the megakaryocytes. According to the present invention, a method for separating megakaryocytes and platelets, including a contact step of bringing a culture solution that contains at least megakaryocytes into contact with a substrate coated with a biocompatible polymer that adheres to the megakaryocytes via at least one of a VLA-4 integrin or a VLA-5 integrin; a culture step of culturing the megakaryocytes to produce platelets before and/or after the contact step; and a recovery step of recovering the culture solution after the contact step and the culture step is provided.

Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.

Abstract: The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method including: making a semiconductor device that is connected parallel to a load by a load cable, perform a switching operation; measuring common-mode current flowing through the load cable during the switching operation; and outputting an evaluation benchmark for radiated noise based on the common-mode current, and an evaluation apparatus are provided.

Abstract: A semiconductor device includes a resin case which houses a semiconductor element, a plurality of lead frames disposed in the principal plane of a base of the resin case with spaces therebetween, and a block portion disposed over a space between adjacent lead frames along the adjacent lead frames. With the semiconductor device, the disposition of the block portion makes creepage distance long, compared with a case where the block portion is not disposed and therefore a space between the adjacent lead frames is flat. Accordingly, even if metal atoms contained in the lead frames or the like migrate on an insulator or at an interface because of migration, a conduction path is hardly formed between the adjacent lead frames. That is to say, a short circuit hardly occurs between the adjacent lead frames with the block portion therebetween. This semiconductor device provides improved reliability.

Abstract: Objects of the present invention are to provide a preparation, which satisfies both a sufficient drug carrying amount and a preferred decomposition rate, and a method for manufacturing the preparation and to provide a member for a preparation used in the preparation of the present invention described above and a method for manufacturing the member. According to the present invention, there are provided a preparation containing a crosslinked substance of an anionic polypeptide and a cationic, polypeptide and a cationic drug; a method for manufacturing the preparation including a freezing step, a drying step, a crosslinking step, and a drug adding step; a member for a preparation formed of a crosslinked substance of an anionic polypeptide and a cationic polypeptide; and a method for manufacturing the member for a preparation.

Abstract: An inverter drive device for driving a semiconductor switching element that controls an output current of an inverter. An inverter drive device includes a drive circuit configured to apply a drive voltage to the semiconductor switching element, to thereby turn the semiconductor switching element on and off, the turning off of the semiconductor switching element causing a counter electromotive force to be generated therein, a clamping diode configured to clamp a voltage of the generated counter electromotive force, a voltage dividing resistor configured to detect a voltage that is proportional to a current flowing through the clamping diode, and an auxiliary drive circuit configured to generate a control voltage in accordance with the voltage detected by the voltage dividing resistor, and to apply the control voltage to the semiconductor switching element, to thereby turn the semiconductor switching element on.

Abstract: An inverter drive device for driving a semiconductor switching element that controls an output current of an inverter. An inverter drive device includes a drive circuit configured to apply a drive voltage to the semiconductor switching element, to thereby turn the semiconductor switching element on and off, the turning off of the semiconductor switching element causing a counter electromotive force to be generated therein, a clamping diode configured to clamp a voltage of the generated counter electromotive force, a voltage dividing resistor configured to detect a voltage that is proportional to a current flowing through the clamping diode, and an auxiliary drive circuit configured to generate a control voltage in accordance with the voltage detected by the voltage dividing resistor, and to apply the control voltage to the semiconductor switching element, to thereby turn the semiconductor switching element on.

Abstract: A miniaturized semiconductor device includes a frame body having an opening region formed in a central portion, an insulating substrate which is provided in the opening region of the frame body and on which semiconductor chips are mounted, lead portions, each including an inclined portion that is at least partially exposed to the opening region formed in the frame body and extends so as to be inclined with respect to an end surface forming the opening region, and a bonding wire that is bonded between the lead portion and the semiconductor chip by ultrasonic bonding.

Abstract: In a semiconductor device, an insulating substrate housed in an housing opening portion of a resin case includes an insulating board, a first metal layer formed on the upper surface of the insulating board, a second metal layer which is formed on an outer peripheral edge portion of the upper surface of the insulating board and is in contact with a level difference portion, and a third metal layer formed on the under surface of the insulating board and leveled with or protruding from the under surface of the resin case. The first and second metal layers are formed by etching copper foil formed on the insulating board so that these metal layers have the same thickness. The thickness of the second metal layer may be changed relatively freely according to the housing depth of the resin case. Thus, the semiconductor device may be made thin.

Abstract: A semiconductor device includes a resin case which houses a semiconductor element, a plurality of lead frames disposed in the principal plane of a base of the resin case with spaces therebetween, and a block portion disposed over a space between adjacent lead frames along the adjacent lead frames. With the semiconductor device, the disposition of the block portion makes creepage distance long, compared with a case where the block portion is not disposed and therefore a space between the adjacent lead frames is flat. Accordingly, even if metal atoms contained in the lead frames or the like migrate on an insulator or at an interface because of migration, a conduction path is hardly formed between the adjacent lead frames. That is to say, a short circuit hardly occurs between the adjacent lead frames with the block portion therebetween. This semiconductor device provides improved reliability.