Abstract: There is provided a visible-region light measuring instrument including: a first photodiode and a second photodiode. At least one of the first photodiode and the second photodiode comprises plural photodiodes, when the first photodiode comprises a first plural photodiodes, the visible-region light measuring instrument has first fuses that control connections between the first plural photodiodes and at least one of the first node and the first power supply node. When the second photodiode comprises a second plural photodiodes, the visible-region light measuring instrument has second fuses that control connections between the second plural photodiodes and at least one of the first node and the second power supply node.

Abstract: A light quantity measuring device includes a first light reception element, a second light, reception element, an identification circuit, and a selection circuit. The first light reception element receives a predetermined incident light at a first light reception surface. The second light reception element receives the incident light at a second light reception surface, which is oriented in the same direction as the first light reception surface. The identification circuit identifies an incident angle of the incident light with respect to the first light reception surface. The selection circuit, when the incident angle differs from a desired incident angle, selectively electrically connects an output portion of the second light reception element to an output portion of the first light reception element.

Abstract: A light amount measuring apparatus including a light amount measuring circuit and a power supply for supplying power to the light amount measuring circuit; wherein the light amount measuring circuit includes a light receiving device for receiving light and outputting an electric signal corresponding to light amount of the received light; a first switch for switching between electrical connection and disconnection between the light receiving device and the power supply; and a drive controller for controlling the first switch so that the first switch electrically connects the light receiving device to the power supply when the light receiving device is set to an activated state and electrically disconnects the light receiving device from the power supply when the light receiving device is set to a deactivated state.

Abstract: The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Abstract: The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Abstract: The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Abstract: Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident part 12 having a light receiving element 36 and a signal processing circuit 38 that processes an output signal from the light receiving element 36, which are formed on a SOI substrate, a plurality of contact plugs 52 electrically connected to the light blocking layer 42 are laminated in the thickness direction of the SOI substrate along an edge of the light blocking layer that blocks the sunlight, with the uppermost of wiring layers on the signal processing circuit 38 as the light blocking layer 42.

Abstract: An SOI semiconductor device has a substrate, an insulation film, a silicon film, a gate insulation film, a gate electrode, a pair of first diffusion regions, a first region, and a second diffusion region. The insulation film is formed on the substrate. The silicon film is formed on the insulation film. The gate insulation film is formed on the silicon film. The gate electrode is formed on the gate insulation film. The pair of first diffusion regions is formed in the silicon film while sandwiches the under part of the gate electrode in between. The first region is sandwiched by a pair of the first diffusion regions. The second diffusion region contacts with the first region while adjoins one of the first regions and has the same conductivity type with the first region.

Abstract: A light amount measuring apparatus including a light amount measuring circuit and a power supply for supplying power to the light amount measuring circuit; wherein the light amount measuring circuit includes a light receiving device for receiving light and outputting an electric signal corresponding to light amount of the received light; a first switch for switching between electrical connection and disconnection between the light receiving device and the power supply; and a drive controller for controlling the first switch so that the first switch electrically connects the light receiving device to the power supply when the light receiving device is set to an activated state and electrically disconnects the light receiving device from the power supply when the light receiving device is set to a deactivated state.

Abstract: There is provided a visible-region light measuring instrument including: a first photodiode and a second photodiode. At least one of the first photodiode and the second photodiode comprises plural photodiodes, when the first photodiode comprises a first plural photodiodes, the visible-region light measuring instrument has first fuses that control connections between the first plural photodiodes and at least one of the first node and the first power supply node. When the second photodiode comprises a second plural photodiodes, the visible-region light measuring instrument has second fuses that control connections between the second plural photodiodes and at least one of the first node and the second power supply node.

Abstract: A light quantity measuring device includes a first light reception element, a second light, reception element, an identification circuit, and a selection circuit. The first light reception element receives a predetermined incident light at a first light reception surface. The second light reception element receives the incident light at a second light reception surface, which is oriented in the same direction as the first light reception surface. The identification circuit identifies an incident angle of the incident light with respect to the first light reception surface. The selection circuit, when the incident angle differs from a desired incident angle, selectively electrically connects an output portion of the second light reception element to an output portion of the first light reception element.

Abstract: A photo detection apparatus includes first and second photo detection elements which are connected in series to each other at a junction node. A spectral response characteristic of the first photo detection element is different than a spectral response characteristics characteristic of the second photo detection element. The photo detection apparatus further includes a signal generating circuit connected to the junction node and generating a light detection signal corresponding to a current extracted at the junction node.

Abstract: An automatic analysis and control system for electroless composite plating solution for automatically analyzing an electroless composite plating solution and performing such a control as to obtain an appropriate bath composition and/or use conditions, wherein, as a technique for measuring the concentration of a metallic component in the plating solution by absorptiometry, the system includes a mechanism for measuring transmissivity or absorbance at least two or more different wavelengths after the plating solution is automatically introduced into an analytical cell, and a mechanism for calculating the objective concentration from the measured values and displaying the calculation results.

Abstract: Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident part 12 having a light receiving element 36 and a signal processing circuit 38 that processes an output signal from the light receiving element 36, which are formed on a SOI substrate, a plurality of contact plugs 52 electrically connected to the light blocking layer 42 are laminated in the thickness direction of the SOI substrate along an edge of the light blocking layer that blocks the sunlight, with the uppermost of wiring layers on the signal processing circuit 38 as the light blocking layer 42.

Abstract: The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Abstract: The invention provides an amplifying circuit for reducing electric power consumption at a standby mode time. Therefore, in DMOS and NMOS transistors constituting a cascode amplifier, the gate of the DMOS transistor of an initial stage is biased to a grounding voltage through a resistor, and the source of the DMOS transistor is connected to the output side of an inverter through an inductor. When a control signal is set to a level “H”, the output of the inverter becomes a level “L”, and the DMOS transistor attains a turning-on state and a sufficient operating electric current is flowed to the cascode amplifier. Thus, an input signal is amplified and is outputted as an output signal. In contrast to this, when the control signal is set to the level “L”, the output of the inverter becomes the level “H”, and the DMOS transistor attains a turning-off state and the operating electric current of the cascode amplifier is stopped.

Abstract: A voltage controlled oscillator (VCO) conducts current on two paths through parallel inductors and parallel cross-coupled metal-oxide-semiconductor transistors. A pair of varactors are connected in series on a third path extending from a node between one inductor and one transistor to a node between the other inductor and the other transistor. The oscillation frequency is controlled by a voltage applied to a node between the two varactors on the third path. Each varactor is structured as a metal-oxide-semiconductor transistor with interconnected source and drain electrodes, a gate electrode, a body region below the gate electrode, and a body terminal region extending beyond the gate electrode. An adjustment voltage applied to the body terminal region shifts the voltage-capacitance curve of the varactor and the voltage-frequency curve of the VCO without changing the shapes of these curves, providing a simple way to adjust the VCO to meet application requirements.

Abstract: A semiconductor element comprises a capacitance variable section and an inductor section. In the capacitance variable section, a variable capacitance diode equipped with first and second control electrodes is provided on an insulative substrate. The inductor section is formed on the capacitance variable section formed with the variable capacitance diode. The inductor section is formed in an insulating layer provided on the variable capacitance diode. A first input/output electrode, a second input/output electrode, and first and second control input/output electrodes are provided in exposed form on the upper side of the insulating layer provided on the capacitance variable section.

Abstract: An SOI semiconductor device has a substrate, an insulation film, a silicon film, a gate insulation film, a gate electrode, a pair of first diffusion regions, a first region, and a second diffusion region. The insulation film is formed on the substrate. The silicon film is formed on the insulation film. The gate insulation film is formed on the silicon film. The gate electrode is formed on the gate insulation film. The pair of first diffusion regions is formed in the silicon film while sandwiches the under part of the gate electrode in between. The first region is sandwiched by a pair of the first diffusion regions. The second diffusion region contacts with the first region while adjoins one of the first regions and has the same conductivity type with the first region.

Abstract: An automatic analysis and control system for electroless composite plating solution for automatically analyzing an electroless composite plating solution and performing such a control as to obtain an appropriate bath composition and/or use conditions, wherein, as a technique for measuring the concentration of a metallic component in the plating solution by absorptiometry, the system includes a mechanism for measuring transmissivity or absorbance at least two or more different wavelengths after the plating solution is automatically introduced into an analytical cell, and a mechanism for calculating the objective concentration from the measured values and displaying the calculation results.