Abstract: The invention provides an amplifying circuit for reducing electric power consumption at a standby mode time. Therefore, in DMOS and NMOS transistors constituting a cascode amplifier, the gate of the DMOS transistor of an initial stage is biased to a grounding voltage through a resistor, and the source of the DMOS transistor is connected to the output side of an inverter through an inductor. When a control signal is set to a level “H”, the output of the inverter becomes a level “L”, and the DMOS transistor attains a turning-on state and a sufficient operating electric current is flowed to the cascode amplifier. Thus, an input signal is amplified and is outputted as an output signal. In contrast to this, when the control signal is set to the level “L”, the output of the inverter becomes the level “H”, and the DMOS transistor attains a turning-off state and the operating electric current of the cascode amplifier is stopped.

Abstract: A semiconductor device includes a variable capacitance diode. The variable capacitance diode includes a semiconductor substrate having a circuit area; a plurality of diffusion areas formed on the semiconductor substrate in the circuit area; a gate oxide layer formed in a gate area between the diffusion areas; a control electrode formed on the gate oxide layer; an insulating layer formed on the diffusion areas and the control electrode; a first contact formed in the insulating layer and passing through the insulating layer; a first wiring pattern electrically connected to the diffusion areas through the first contact; a second contact formed in the insulating layer and passing through the insulating layer; and a second wiring layer electrically connected to the control electrode through the second contact. The gate oxide layer has a first area with a first thickness and a second area with a second thickness different from the first thickness.

Abstract: A semiconductor element comprises a capacitance variable section and an inductor section. In the capacitance variable section, a variable capacitance diode equipped with first and second control electrodes is provided on an insulative substrate. The inductor section is formed on the capacitance variable section formed with the variable capacitance diode. The inductor section is formed in an insulating layer provided on the variable capacitance diode. A first input/output electrode, a second input/output electrode, and first and second control input/output electrodes are provided in exposed form on the upper side of the insulating layer provided on the capacitance variable section.

Abstract: The capacity measuring device comprises a transistor (40) formed on a silicon substrate and having a drain, source, and gate regions (41, 42, and 43), extension metals (51-54) to be connected to the regions, a guard electrode (55) surrounding the extension metal (53) for the gate region, measurement pads (61-64) electrically connected to the extension metals, the guard rings (61g-64g) surrounding the measurement pads and connected to the guard electrode (55). Accordingly, the infinitesimal capacity between any regions of the transistor in full scale is accurately measured by connecting the guard electrode (55) to a guard terminal of an infinitesimal capacity measuring apparatus for canceling the parasitic capacity.

Abstract: The capacity measuring device comprises a transistor (40) formed on a silicon substrate and having a drain, source, and gate regions (41, 42, and 43), extension metals (51-54) to be connected to the regions, a guard electrode (55) surrounding the extension metal (53) for the gate region, measurement pads (61-64) electrically connected to the extension metals, the guard rings (61g-64g) surrounding the measurement pads and connected to the guard electrode (55). Accordingly, the infinitesimal capacity between any regions of the transistor in full scale is accurately measured by connecting the guard electrode (55) to a guard terminal of an infinitesimal capacity measuring apparatus for canceling the parasitic capacity.

Abstract: A semiconductor integrated circuit device which has a low power consumption in a static state. A first NMOS transistor includes a gate connected to an input, a source connected to ground, and a drain connected to an output. A second NMOS transistor includes a gate connected to the power supply, and a drain and source, one connected to the input terminal and the other to the first NMOS transistor's body. A first PMOS transistor includes a gate connected to the input, a source connected to a power supply, and a drain connected to the output. A second PMOS transistor includes a gate connected to ground, and a drain and source, one connected to the input terminal and the other to the first PMOS transistor's body. Also, the second NMOS transistor's body is connected to ground, or the second PMOS transistor's body is connected to VDD, or both.

Abstract: An automatic analysis and control system for electroless composite plating solution for automatically analyzing an electroless composite plating solution and performing such a control as to obtain an appropriate bath composition and/or use conditions, wherein, as a technique for measuring the concentration of a metallic component in the plating solution by absorptiometry, the system includes a mechanism for measuring transmissivity or absorbance at least two or more different wavelengths after the plating solution is automatically introduced into an analytical cell, and a mechanism for calculating the objective concentration from the measured values and displaying the calculation results.

Abstract: A semiconductor driver circuit includes a first inverter circuit that inverts an input voltage and supplies a first inverted voltage, and a second inverter circuit that inverts the first inverted voltage and outputs a second inverted voltage. The second inverter circuit includes a first conduction type transistor, such as a PMOS transistor, and a second conduction type transistor, different from the first conduction type transistor, such as an NMOS transistor. The driver circuit further includes a substrate voltage supply circuit that supplies voltages to the substrate of the first conduction type transistor and the substrate of the second conduction type transistor, respectively, according to the second inverted voltage, and a substrate voltage control circuit that adjusts the substrate voltages applied to either or both of the first and second conduction type transistors, according to the second inverted voltage, in order to lessen the power consumption of the driver circuit.

Abstract: An electroless composite plating solution comprising metal ions, a complexing agent for said metal ions, a hypophosphite serving as a reducing agent, a surface active agent, and a water-insoluble composite material, said surface active agent comprising a quaternary ammonium salt surface active agent which has two or more ethylene oxide groups and an alkyl group or a fluorine-substituted alkyl or alkenyl group, said quaternary ammonium salt surface active agent being cationic in nature or exhibiting substantially cationic properties under pH conditions of said plating solution.

Abstract: In a braking force distribution controlling apparatus mounted on a car and arranged to perform such a control as to make a rear-wheel braking force smaller than a front-wheel braking force when predetermined initiation conditions are met, one of the initiation condition is to satisfy either one of such a first condition that a body deceleration is not less than a first predetermined deceleration K1 and that a rear-wheel slip value is a first predetermined value or more greater than a front-wheel slip value and such a second condition that the body deceleration is not less than a second predetermined deceleration K2 which is a value greater than the aforementioned first predetermined deceleration K1.

Abstract: A composite deposit in which insoluble particles are co-deposited and dispersed in a metal matrix is formed on an article by dipping the article in a metal plating solution having insoluble particles dispersed therein and effecting an electroplating or chemical plating process. By adjusting the specific surface area of insoluble particles to be dispersed in the metal plating solution, the amount of insoluble particles co-deposited in the composite deposit can be controlled. Better results are obtained with insoluble particles having a specific surface area of 10 m.sup.2 /g or less.

Abstract: A composite film consisting of particles of fibers dispersed in a metal matrix and formed by electroless deposition can be improved in appearance and particle or fiber content by adding a water-soluble amine or ammonium salt to the electroless plating bath. Preferably the bath contains a water-soluble nickel or cobalt salt, a hypophosphite reducing agent, a chelating agent for chelating the nickel or cobalt ion, a surface active agent, water-insoluble particles or fibers typically of polytetrafluoroethylene, and the water-soluble amine or ammonium salt.

Abstract: A composite plating apparatus includes a plating tank for receiving therein a composite plating solution containing water-insoluble particles or fibers and a reservoir disposed adjacent the plating tank through an overflow weir, preferably in a common housing, the plating solution flowing into the reservoir in an overflow manner. A pump is disposed within the reservoir having a suction port for drawing the solution in the reservoir and a discharge port for pumping the solution. A conduit connected to the pump discharge port extends therefrom over the bottom of the plating tank through the overflow weir and includes a plurality of orifices. The plating solution is circulated by causing the solution to flow over the weir from the plating tank to the reservoir, pumping the solution to the conduit, and injecting the solution into the tank through the orifices to uniformly agitate the solution.

Abstract: A movable electrical contactor having a surface thereof in slidable contact with a mating conductor, the surface being coated with a composite material in which particles of graphite (C) are dispersed in a matrix of silver (Ag). The coating film is formed by electric plating using a plating liquid of metal silver in the range of 2-100 g/l in concentration, potassium cyanide in the range of 2-250 g/l, potassium hydroxide in the range of 0.5-15 g/l, graphite powder in the range of 1-55 g/l, and a dispersant for dispersing graphite powder into plating liquid in the range of 10-2000 ppm.

Abstract: Disclosed is a composite plating film for sliding members, essentially containing at least one of the alloy elements selected from tin, indium, antimony, and copper; inorganic particles; and lead; the composition of the composite plating film being:a) at least one of the alloy elements selected from tin, indium, antimony, and copper . . . 2 to 30 weight % in total;b) inorganic particles . . . 0.3 to 25 volume %; andc) lead . . . the balance.

Abstract: A rocket engine combustion chamber is defined by a generally cylindrical member comprising a metal matrix and heat insulating particles wherein the particles are distributed in the matrix such that the amount of particles gradually decreases in a radial direction from the inner surface to the outer surface of the member. Such a member is manufactured by controlled composite electroplating.