Abstract: Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

Abstract: A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.

Abstract: A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Abstract: A common solvent vapor supply source 41 and a common processing gas supply source 42 supply ozone gas and steam to a plurality of processing vessels 30A, 30B. Pressures in the processing vessels are regulated by adjusting the openings of the valuable throttle valves 50A, 50B, which are placed in exhaust lines 80A, 80B, respectively.

Abstract: A curable composition comprising: (A) a hydrocarbon compound having a plurality of carbon-carbon double bonds, and (B) a carbonaceous material. The hydrocarbon compound may preferably be 1,2-polybutadiene. The curable composition may be used for a fuel cell separator.

Abstract: A substrate processing method for removing a resist film from a substrate having the resist film formed thereon comprises maintaining the inner region of the chamber at a prescribed temperature by putting a substrate in a chamber, denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented, and processing the substrate with a prescribed liquid material so as to remove the denatured resist film from the substrate.

Abstract: There is provided a conductive curable resin composition comprising (A) a curable resin composition comprising an elastomer with a Mooney viscosity (ML1+4 (100° C.)) of 25 or greater at 2-80 wt % and (B) a carbon material, with a weight ratio of component (A) to component (B) of 70-5:30-95. The curable resin composition of component (A) preferably comprises (A1) an elastomer at 80-2 wt %, (A2) a radical reactive resin at 20-98 wt % and (A3) an organic peroxide at 0.2-10 parts by weight to 100 parts by weight of (A1+A2). Also provided are a process for production of a conductive cured resin by shaping and curing of the conductive curable resin composition, and a fuel cell separator, an assembly for a cell, an electrode or a heat releasing plate, obtained thereby.

Abstract: An electroconductive curable resin composition comprising: (A) a curable resin and/or curable resin composition having a viscosity of from 0.1 to 1,000 Pa.s at 80° C. and from 0.01 to 100 Pa.s at 100° C.; and (B) a carbonaceous material at a ratio of 80 to 1:20 to 99 in terms of the mass ratio of component (A) to component (B). Such a resin composition is free from separation between a carbonaceous material and a resin at the mold working, excellent in the moldability (e.g., compression molding, transfer molding, injection molding, injection-compression molding) and capable of providing a cured product having high electroconductivity.

Abstract: This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.

Abstract: After semiconductor wafers W have been processed with ozone gas and steam fed into a processing vessel 10, air is fed into the processing vessel 10 from an air supply source connected to an ozone gas supply pipe 42 for feeding ozone gas into the processing vessel 10, whereby an atmosphere of the ozone gas in the processing vessel 10 is replaced with an atmosphere of the air.

Abstract: Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Abstract: Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

Abstract: This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.

Abstract: A substrate processing apparatus and method which can prevent accidents in advance so as to ensure safety against interruption of operations of the apparatus and leakage of processing substances. In a substrate processing method in which wafers W are processed are processed by feeding an ozone gas 5 to the wafers W loaded in a processing vessel 2 while an interior atmosphere in the processing vessel is being exhausted to be passed through an ozone killer 10, the ozone gas 5 is fed under the conditions that the processing vessel 2 is tightly closed, and the ozone killer in its normal state. When the processing is interrupted, an interior atmosphere in the processing vessel 2 is forcedly exhausted. When the gas leaks, the interior atmosphere and a peripheral atmosphere of the processing vessel 2 are forcedly exhausted while the feed of the ozone gas 5 is paused.

Abstract: There is provided a conductive curable resin composition comprising (A) a curable resin composition comprising an elastomer with a Mooney viscosity (ML1+4 (100° C.)) of 25 or greater at 2-80 wt % and (B) a carbon material, with a weight ratio of component (A) to component (B) of 70-5:30-95. The curable resin composition of component (A) preferably comprises (A1) an elastomer at 80-2 wt %, (A2) a radical reactive resin at 20-98 wt % and (A3) an organic peroxide at 0.2-10 parts by weight to 100 parts by weight of (A1+A2). Also provided are a process for production of a conductive cured resin by shaping and curing of the conductive curable resin composition, and a fuel cell separator, an assembly for a cell, an electrode or a heat releasing plate, obtained thereby.

Abstract: An electroconductive curable resin composition comprising (A) a graphite powder containing boron in the graphite crystal and (B) a curable resin and/or a curable resin composition, at a ratio of 20 to 99.9:80 to 0.1 in terms of the mass ratio of the component (A) to component (B); and a cured product thereof and a formed product obtained by using the curable resin composition. The cured product exhibits excellent electroconductivity even with a relatively small amount of electroconductive filler charged, and also exhibits a high heat resistance, a good heat-radiating property and superior formability or workability.

Abstract: A common solvent vapor supply source 41 and a common processing gas supply source 42 supply ozone gas and steam to a plurality of processing vessels 30A, 30B. Pressures in the processing vessels are regulated by adjusting the openings of the valuable throttle valves 50A, 50B, which are placed in exhaust lines 80A, 80B, respectively.

Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.