Patents by Inventor Tadashi Kai

Tadashi Kai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11094743
    Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: August 17, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masayoshi Iwayama, Tatsuya Kishi, Masahiko Nakayama, Toshihiko Nagase, Daisuke Watanabe, Tadashi Kai
  • Publication number: 20210210549
    Abstract: A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second direction intersecting the first direction. Memory cells are formed at intersections between first and second interconnections. Each memory cell includes a resistance change element and a selector. In the arrangement of memory cells, all memory cells that are connected to any particular first interconnection are aligned along that first interconnection, and all memory cells connected to any particular second interconnection are alternately staggered in the first direction across a width of that second interconnection.
    Type: Application
    Filed: March 19, 2021
    Publication date: July 8, 2021
    Inventors: Masahiko NAKAYAMA, Kazumasa SUNOUCHI, Gaku SUDO, Tadashi KAI
  • Patent number: 10985209
    Abstract: A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second direction intersecting the first direction. Memory cells are formed at intersections between first and second interconnections. Each memory cell includes a resistance change element and a selector. In the arrangement of memory cells, all memory cells that are connected to any particular first interconnection are aligned along that first interconnection, and all memory cells connected to any particular second interconnection are alternately staggered in the first direction across a width of that second interconnection.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: April 20, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masahiko Nakayama, Kazumasa Sunouchi, Gaku Sudo, Tadashi Kai
  • Patent number: 10978636
    Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: April 13, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Takeshi Iwasaki, Akiyuki Murayama, Tadashi Kai, Tadaomi Daibou, Masaki Endo, Shumpei Omine, Taichi Igarashi, Junichi Ito
  • Publication number: 20210082999
    Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 18, 2021
    Applicant: KIOXIA CORPORATION
    Inventors: Masaru TOKO, Tadaomi DAIBOU, Junichi ITO, Taichi IGARASHI, Tadashi KAI
  • Publication number: 20200403150
    Abstract: A stack of the embodiment includes: a first magnetic substance; a second magnetic substance; and a first nonmagnetic substance which is disposed between the first magnetic substance and the second magnetic substance and contains at least one first metal element (M1) selected from the group consisting of ruthenium (Ru) and osmium (Os) and at least one second metal element (M2) selected from the group consisting of rhodium (Rh) and iridium (Ir). A magnetic device of the embodiment includes: a third magnetic substance; the stack; and a second nonmagnetic substance which is disposed between the third magnetic substance and the stack.
    Type: Application
    Filed: March 5, 2020
    Publication date: December 24, 2020
    Applicant: KIOXIA CORPORATION
    Inventors: Rina NOMOTO, Takayuki TSUKAGOSHI, Yasushi NAKASAKI, Masaru TOKO, Tadashi KAI, Takamitsu ISHIHARA
  • Publication number: 20200303628
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).
    Type: Application
    Filed: September 13, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Tadaomi DAIBOU, Yasushi NAKASAKI, Tadashi KAI, Hiroki KAWAI, Takamitsu ISHIHARA, Junichi ITO
  • Publication number: 20200302984
    Abstract: According to one embodiment, a magnetic device includes a stacked body including a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first magnetic layer and the second magnetic layer. The stacked body has a quadrangular planar shape, the stacked body has a first side dimension in a first direction parallel to a surface of a substrate and a thickness in a second direction perpendicular to the surface of the substrate, and a ratio of the first side dimension to the thickness is in a range of 0.10 to 4.0.
    Type: Application
    Filed: August 30, 2019
    Publication date: September 24, 2020
    Inventors: Tadashi KAI, Masahiko NAKAYAMA, Jyunichi OZEKI, Shogo ITAI
  • Publication number: 20200303453
    Abstract: A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second direction intersecting the first direction. Memory cells are formed at intersections between first and second interconnections. Each memory cell includes a resistance change element and a selector. In the arrangement of memory cells, all memory cells that are connected to any particular first interconnection are aligned along that first interconnection, and all memory cells connected to any particular second interconnection are alternately staggered in the first direction across a width of that second interconnection.
    Type: Application
    Filed: September 3, 2019
    Publication date: September 24, 2020
    Inventors: Masahiko NAKAYAMA, Kazumasa SUNOUCHI, Gaku SUDO, Tadashi KAI
  • Patent number: 10707356
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: July 7, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Megumi Yakabe, Yasushi Nakasaki, Tadaomi Daibou, Tadashi Kai, Junichi Ito, Masahiro Koike, Shogo Itai, Takamitsu Ishihara
  • Patent number: 10707269
    Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: July 7, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Toshihiko Nagase, Daisuke Watanabe, Koji Ueda, Tadashi Kai, Kazumasa Sunouchi
  • Publication number: 20200091227
    Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.
    Type: Application
    Filed: March 14, 2019
    Publication date: March 19, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Masayoshi IWAYAMA, Tatsuya KISHI, Masahiko NAKAYAMA, Toshihiko NAGASE, Daisuke WATANABE, Tadashi KAI
  • Publication number: 20200083289
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.
    Type: Application
    Filed: March 14, 2019
    Publication date: March 12, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Megumi YAKABE, Yasushi NAKASAKI, Tadaomi DAIBOU, Tadashi KAI, Junichi ITO, Masahiro KOIKE, Shogo ITAI, Takamitsu ISHIHARA
  • Publication number: 20200083432
    Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 12, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Takeshi IWASAKI, Akiyuki MURAYAMA, Tadashi KAI, Tadaomi DAIBOU, Masaki ENDO, Shumpei OMINE, Taichi IGARASHI, Junichi ITO
  • Publication number: 20200083431
    Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.
    Type: Application
    Filed: March 1, 2019
    Publication date: March 12, 2020
    Inventors: Takeshi IWASAKI, Akiyuki MURAYAMA, Tadashi KAI, Tadaomi DAIBOU, Masaki ENDO, Shumpei OMINE, Taichi IGARASHI, Junichi ITO
  • Publication number: 20200083285
    Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 12, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Toshihiko NAGASE, Daisuke WATANABE, Koji UEDA, Tadashi KAI, Kazumasa SUNOUCHI
  • Patent number: 10573805
    Abstract: According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: February 25, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Akiyuki Murayama, Takeshi Iwasaki, Tadashi Kai, Tadaomi Daibou, Masaki Endo, Taichi Igarashi, Junichi Ito
  • Publication number: 20190088862
    Abstract: According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.
    Type: Application
    Filed: March 2, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Akiyuki MURAYAMA, Takeshi IWASAKI, Tadashi KAI, Tadaomi DAIBOU, Masaki ENDO, Taichi IGARASHI, Junichi ITO
  • Patent number: 10186656
    Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: January 22, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Shumpei Omine, Takeshi Iwasaki, Masaki Endo, Akiyuki Murayama, Tadaomi Daibou, Tadashi Kai, Junichi Ito
  • Publication number: 20180269382
    Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.
    Type: Application
    Filed: September 13, 2017
    Publication date: September 20, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Shumpei OMINE, Takeshi IWASAKI, Masaki ENDO, Akiyuki MURAYAMA, Tadaomi DAIBOU, Tadashi KAI, Junichi ITO