Patent number: 9385304
Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.
Type:
Grant
Filed:
March 10, 2014
Date of Patent:
July 5, 2016
Assignees:
KABUSHIKI KAISHA TOSHIBA, SK HYNIX INC.
Inventors:
Masahiko Nakayama, Tadashi Kai, Masaru Toko, Hiroaki Yoda, Hyung Suk Lee, Jae Geun Oh, Choon Kun Ryu, Min Suk Lee