Abstract: Disclosed is a substrate treating apparatus including a substrate holder configured to hold a treatment substrate group, a second transport mechanism configured to pull out and transport a divided substrate group from the treatment substrate group held by the substrate holder, an underwater posture turning unit configured to turn a posture of the divided substrate group, transported by the second transport mechanism, from vertical to horizontal collectively, a center robot configured to take one substrate from the divided substrate group, whose posture is turned to horizontal, and to transport the one substrate to a single-wafer processing unit, a relative lifting and lowering unit configured to move the substrate holder and the second transport mechanism upward and downward relatively, and an alignment direction relative moving unit configured to move the substrate holder and the second transport mechanism relatively horizontally in an alignment direction where the treatment substrate group is aligned.

Abstract: Disclosed is a substrate treating apparatus that performs treatment on a substrate.

Abstract: Disclosed is a substrate treating apparatus that performs treatment on a substrate. The apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates, a posture turning unit configured to turn a posture of the substrates on which the treatment is performed by the batch-type processing unit to horizontal, a first transport unit configured to transport the substrates from the batch-type processing unit to the posture turning unit, a second transport unit configured to transport the substrates, turned to horizontal by the posture turning unit, to the single-wafer-type processing unit, and an immersion tank in which the substrates are immersed in deionized water before the posture is turned by the posture turning unit.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes: a spin chuck adapted to hold a substrate having a substantially circular outer shape with the principal surface of the substrate set substantially horizontally and rotate the substrate with the center of the substrate as a rotation center; a processing liquid ejection nozzle adapted to eject a processing liquid to the circumferential edge part of the substrate rotated held by the spin chuck; and a cup adapted to be disposed in the external circumferential part of the substrate rotated held by the spin chuck and collect the processing liquid scattered from the substrate, and further includes, above the surface of the substrate rotated held by the spin chuck, an anti-splash member that is disposed between a collision position where the processing liquid scattered from the substrate collides with the cup and the substrate and for preventing the processing liquid having collided with the cup from reaching the surface of the substrate rotated held by the spin chuck.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes a substrate holding unit, an injection unit that injects droplets of a processing liquid from a plurality of injection ports respectively toward a plurality of collision positions on the substrate, and a liquid film forming unit. The liquid film forming unit discharges a protective liquid from a plurality of discharge ports toward a plurality of liquid contact positions that respectively cover different collision positions. The plurality of injection ports and the plurality of discharge ports may be formed in a nozzle. A nozzle moving unit may be provided, to move the nozzle along the substrate.

Abstract: A substrate treating method for treating substrates with a treating liquid includes a deionized water cleaning step for supplying deionized water from an injection pipe and cleaning the substrates inside a cleaning tank with deionized water, then a replacing step for injecting a solvent from a solvent injector and replacing the deionized water with the solvent, a separating and removing step for switching a channel to a branch pipe and causing a separator to remove the deionized water from the treating liquid, and an adsorbing and removing step for switching the channel to another branch pipe and causing a deionized water remover to adsorb and remove the deionized water from the treating liquid.

Abstract: A substrate treating apparatus for immersing substrates in a treating liquid. An inner tank stores the treating liquid, an outer tank collects the treating liquid overflowing the inner tank, and a lifter moves the substrates between a standby position above the inner tank and a treating position inside the inner tank. Circulation piping connects the inner tank and the outer tank. The treating liquid overflows the inner tank into the outer tank in a treating state with the lifter and the substrates located in the treating position. The treating liquid remains in the inner tank without overflowing in a non-treating state with the lifter and the substrates located in the standby position. The treating liquid flows from the inner tank to the outer tank through the circulating piping in a non-treating circulation state before the lifter moves the substrates to the treating position.

Abstract: A substrate processing apparatus includes a substrate holding unit that holds a substrate, an injection unit that injects droplets of a processing liquid from a plurality of injection ports respectively toward a plurality of collision positions within a principal surface of the substrate held by the substrate holding unit, and a liquid film forming unit. The liquid film forming unit discharges a protective liquid from a plurality of discharge ports respectively toward a plurality of liquid contact positions within the principal surface of the substrate held by the substrate holding unit to form a plurality of liquid films of the protective liquid that respectively cover different collision positions.

Abstract: A substrate treating method for treating substrates with a treating liquid includes a deionized water cleaning step for supplying deionized water from an injection pipe and cleaning the substrates inside a cleaning tank with deionized water, then a replacing step for injecting a solvent from a solvent injector and replacing the deionized water with the solvent, a separating and removing step for switching a channel to a branch pipe and causing a separator to remove the deionized water from the treating liquid, and an adsorbing and removing step for switching the channel to another branch pipe and causing a deionized water remover to adsorb and remove the deionized water from the treating liquid.

Abstract: An inventive substrate treatment method is performed by a substrate treatment apparatus including a plate having an opposed surface to be kept in opposed spaced relation to one surface of a substrate for treating the substrate with a treatment liquid, and includes: a pre-supply liquid filling step of supplying a pre-supply liquid into a space defined between the one surface of the substrate and the plate through a spout which is provided in the opposed surface in opposed relation to the center of the substrate, and filling the space with the pre-supply liquid, the pre-supply liquid having a smaller contact angle with respect to the substrate and the plate than the treatment liquid; a treatment liquid replacing step of, after a liquid-filled state is established in the space filled with the pre-supply liquid, supplying the treatment liquid into the space to replace the pre-supply liquid present in the space with the treatment liquid while keeping the space in the liquid-filled state; and a treatment liquid con

Abstract: A substrate treating apparatus for treating substrates with a treating liquid includes a treating tank having an inner tank for storing the treating liquid, and an outer tank for collecting the treating liquid overflowing the inner tank. A supply pipe interconnects the inner tank and the outer tank for circulating the treating liquid. A first branch pipe is shunted from the supply pipe, and a separator is mounted on the first branch pipe for separating deionized water and a solvent in the treating liquid, and discharging the deionized water. A second branch pipe interconnects positions upstream and downstream of the separator, and a deionized water remover is mounted on the second branch pipe for adsorbing and removing deionized water from the treating liquid. An injection pipe is connected to the supply pipe for injecting deionized water in a position downstream of the separator. A solvent injector injects the solvent into the injection pipe.

Abstract: A substrate treating apparatus for treating substrates having a film coating. The apparatus includes a treating unit for treating the substrates with a treating solution, a drain pipe for draining the treating solution from the treating unit, a filter mounted on the drain pipe, and an ultraviolet emitting unit for the filter for emitting ultraviolet light to the treating solution flowing through the filter.

Abstract: In liquid exchange processing for exchanging a processing liquid retained in a processing bath from pure water to sulfuric acid and controlling the exchanged sulfuric acid at a predetermined temperature, firstly, pure water is discharged from the processing bath and an external bath. Then, sulfuric acid is supplied from a supply nozzle into the external bath. Then, timing to start circulation processing for circulating sulfuric acid from the external bath to the processing bath, and timing to start temperature control of the processing liquid are determined according to the amount of sulfuric acid retained in the external bath, which amount is obtained from a detection result by a pressure sensor. Accordingly, the temperature control can be started before the supply from the supply nozzle is completed. This shortens the time required for the liquid exchange processing.

Abstract: A substrate treating apparatus for treating substrates having a film coating. The apparatus includes a treating unit for treating the substrates with a treating solution, a drain pipe for draining the treating solution from the treating unit, a filter mounted on the drain pipe, and an ultraviolet emitting unit for the filter for emitting ultraviolet light to the treating solution flowing through the filter.