Abstract: A substrate processing apparatus of the present invention is surrounded by a hermetic member, and the internal space thereof is divided by a hermetic member into a rinse and dry processing chamber, a first and second liquid chemical processing chambers, and a substrate transport chamber. Openings for allowing transportation of substrates to and from corresponding chambers are capable of being exposed and blocked by open/close mechanisms including sealing means. Hence, substrates being processed can be transported in an environment isolated from outside an external atmosphere containing oxygen, to thereby suppress formation of unnecessary oxide films or generation of water marks on the surfaces of substrates while being transported. Further, exhaust emission can be reduced, which emission serves to prevent diffusion of an atmosphere containing vapor of a liquid chemical to the outside of the substrate processing apparatus.

Abstract: For processing semiconductor substrates in a processing fluid, the substrates are introduced into a processing bath in which the processing fluid is filled. For holding the substrates in the process of introducing them into the processing bath, a holder having a pair of holding rods end a pair of aiding rods is prepared. A periodical linear array of grooves is formed on each rod. The rims of substrates are inserted into respective corresponding grooves on the rods so that the substrates do not touch respective side walls of the grooves in the aiding rod.