Abstract: Disclosed is a method for producing an electrode material which has high discharge capacity at high charge/discharge rate and enables to realize sufficient charge/discharge rate performance. Also disclosed are an electrode material, an electrode and a lithium ion battery. Specifically disclosed is a method for producing an electrode material, which is characterized in that a slurry containing an electrode active material or a precursor of the electrode active material, and organic compounds each selected from at least two groups among the group A, group B and group C is sprayed and dried for forming a granule, and the thus-formed granule is fired at a temperature not less than 500° C. but not more than 1000° C. in a non-oxidizing atmosphere.

Abstract: The present invention provides an excellent durable cathode for hydrogen generation, which has a low hydrogen overvoltage and reduced dropping-off of a catalyst layer against the reverse current generated when an electrolyzer is stopped, and a method for producing the same. The present invention provides a cathode for hydrogen generation having a conductive base material and a catalyst layer formed on the conductive base material, wherein the catalyst layer includes crystalline iridium oxide, platinum and iridium-platinum alloy.

Abstract: A composition for surface treatment of aluminium, aluminum alloys, magnesium or magnesium alloys and the treating solutions being diluted to the desired concentration are defined. The composition contains (1) compound A containing at least one metal element selected from the group consisting of Hf(IV), Ti(IV) and Zr(IV), (2) a fluorine-containing compound of sufficient amount to make fluorine exist in the composition in an amount of at least 5 times the molarity of the total molarity of the metal contained in the above-mentioned compound A, (3) at least one metal ion B selected from the group of alkaline earth metals, (4) at least one metal ion C selected from the group consisting of Al, Zn, Mg, Mn and Cu, and (5) nitric ion and the mol concentration of compound A is 0.1-50 mmol/L as the metal element of Hf(IV), Ti(IV) and Zr(IV). A metal treated with the treating method of the present invention solution has an excellent resistance to various corrosive environments.

Abstract: The present invention is the method for surface treatment of a metal material containing iron and/or zinc, containing component (A) and component (B); where (A) is a compound containing at least one metal element selected from the group consisting of Ti, Zr, Hf and Si, (B) is a compound containing fluorine as a supplying source of HF, wherein the ratio K=A/B between the total mole weight A of metal elements of Ti, Zr, Hf and Si in the compound of component (A) and the mole weight B which when the total fluorine atoms in the fluorine-containing compound of component (B) is converted to HF is within the range of 0.06?K?0.18, and the concentration of component (A) indicated by the total mole concentration of metal elements of Ti, Zr, Hf and Si is within the region of 0.05 to 100 m mol/L. To the treating solution for surface treatment, at least one compound containing at least one metal element selected from the group consisting of Ag, Al, Cu, Fe, Mn, Mg, Ni, Co and Zn can be blended.

Abstract: An optical system deviation estimating apparatus includes an erected/inverted attitude setting means 9 for changing dispositional attitude of an optical system under test, a non-interferometric type wavefront measuring means 10 for measuring wavefronts at the attitudes as set up without resorting to interference phenomenon of light, a polynomial approximation means 15 for expanding measured wavefront values determined by the non-interferometric type wavefront measuring means 10 to a polynomial, an averaging arithmetic means 11 for averaging the measured values derived from output of the non-interferometric type wavefront measuring means 10 or alternatively arithmetic values derived from output of the polynomial approximation means 15, and a polynomial specific coefficient extraction arithmetic means 16 for extracting specific coefficient values of the polynomial.

Abstract: A composition for surface treatment of aluminium, aluminum alloy, magnesium or magnesium alloy and the treating solutions being diluted to the desired concentration are defined. A said composition of this invention containing (1) compound A containing at least one metal element selected from the group consisting of Hf(IV), Ti(IV) and Zr(IV), (2) fluorine containing compound of sufficient amount to make fluorine existed in the composition at least by 5 times of molarity to the total molarity of metal contained in above mentioned compound A, (3) at least one metal ion B selected from the group of alkaline earth metals, (4) at least one metal ion C selected from the group consisting of Al, Zn, Mg, Mn and Cu, and (5) nitric ion and the mol concentration of compound A is 0.1-50 mmol/L as metal element of Hf(IV), Ti(IV) and Zr(IV). The metal treated with the treating method applying the present invention solution has excellent resistance to various corrosive environments.

Abstract: The present invention is the method for surface treatment of a metal material containing iron and/or zinc, comprising component (A) and component (B);

Abstract: An optical system deviation estimating apparatus includes an erected/inverted attitude setting means 9 for changing dispositional attitude of an optical system under test, a non-interferometric type wavefront measuring means 10 for measuring wavefronts at the attitudes as set up without resorting to interference phenomenon of light, a polynomial approximation means 15 for expanding measured wavefront values determined by the non-interferometric type wavefront measuring means 10 to a polynomial, an averaging arithmetic means 11 for averaging the measured values derived from output of the non-interferometric type wavefront measuring means 10 or alternatively arithmetic values derived from output of the polynomial approximation means 15, and a polynomial specific coefficient extraction arithmetic means 16 for extracting specific coefficient values of the polynomial.

Abstract: A electrically erasable and programmable memory comprising: a semiconductor substrate; a source region and a drain region formed spaced apart from each other by a definite distance on a main surface of said semiconductor substrate; a channel region provided between the source region and the drain region; a gate insulating film provided on the channel region; a floating gate electrode provided on the gate insulating film; and a control gate electrode provided with an interlayer insulating film sandwiched therebetween so that the control gate electrode at least partially laminates the floating gate electrode; the channel region and the main surface having an inclined portion and the source region being provided relatively above or below the drain region.

Abstract: A electrically erasable and programmable memory comprising: a semiconductor substrate; a source region and a drain region formed spaced apart from each other by a definite distance on a main surface of said semiconductor substrate; a channel region provided between the source region and the drain region; a gate insulating film provided on the channel region; a floating gate electrode provided on the gate insulating film; and a control gate electrode provided with an interlayer insulating film sandwiched therebetween so that the control gate electrode at least partially laminates the floating gate electrode; the channel region and the main surface having an inclined portion and the source region being provided relatively above or below the drain region.

Abstract: An ion implantation method for forming a high concentration dopant implanted layer in a semiconductor substrate comprising irradiating an ion beam of a desired dopant in the semiconductor substrate and annealing the resultant, in which the irradiation of the ion beam is conducted with stepwise reduction of an acceleration energy for the ion beam, intercepting at least for a period during its reduction being proceeded, whereby affording the high concentration dopant implanted layer distributed as a substantially contiguous amorphous layer, and an ion implantation apparatus comprising an ion source, ion attracting means for attracting ions from the ion source, ion selecting means for selecting specified ions among the ions attracted by the ion attracting means, accelerating means for accelerating a beam of the specified ions selected by the ion selecting means with an acceleration energy stepwise reduced, beam scanning means for scanning a direction of the ion beam accelerated by the accelerating means, a sampl