Abstract: A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.

Abstract: A method of manufacturing a semiconductor device, the method including forming dummy gate structures on a substrate; forming spacers on sidewalls of the dummy gate structures; forming a preliminary first interlayer insulation pattern to fill a gap between adjacent spacers; etching an upper portion of the preliminary first interlayer insulation pattern through a first etching process to form a preliminary second interlayer insulation pattern; implanting an ion on the dummy gate structures, the spacers, and the preliminary second interlayer insulation pattern through an ion-implanting process; etching an upper portion of the preliminary second interlayer insulation pattern through a second etching process to form an interlayer insulation pattern having a flat upper surface; and forming a capping pattern on the interlayer insulation pattern to fill a gap between the spacers.

Abstract: Provided is a carbon fiber reinforced plastic machining method using a monitoring sensor which includes the step (S10) of electrically connecting a spindle and the monitoring sensor by a computer numerical control (CNC) device, the step (S20) of determining a start position in relation to machining of the spindle and a machining finish position, and the step (S30) of controlling the movement speed and rotation speed of the spindle in accordance with the determination result.

Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.

Abstract: A display device includes a display area including pixels connected to scan lines and data lines, a power supply for supplying a first power voltage to the pixels through first power lines, repair lines in parallel with the scan lines, a dummy pixel unit including dummy pixels respectively connected to the repair lines, and a sensing unit coupled to one of the repair lines that is not connected to the dummy pixels, wherein the sensing unit measures the first power voltage at a target point through the one of the repair lines that is not connected to the dummy pixels.

Abstract: An embodiment of the present disclosure, provides a method of optical inspection on a carbon fiber reinforced plastics (CFRP) component in which performs an inspection, by maintaining the focal distance for a surface of an object to be inspected, and making a light axis of an image device and a normal line of the surface of the object to be inspected to be identical.

Abstract: A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).

Abstract: A wafer support assembly can include a wafer chuck including a first surface and a second surface, where the first surface can have a central region that is configured to hold a wafer during ion implantation into the wafer, and an edge region surrounding the central region beyond an edge of the wafer when held in the central region, and the second surface opposing the first surface. An edge mask structure can cover at least a portion of the edge region of the first surface, where the edge mask structure can have a mask body with an inclined side surface facing the central region.

Abstract: Display substrates and display devices with reduced electrical resistance are disclosed. One inventive aspect includes a switching device, a first wiring and a second wiring. The switching device includes a first semiconductor layer, first and second gate insulation layers, a source electrode and a drain electrode. The source and drain electrodes are formed to electrically connect, through the first and second gate insulation layers, to the first semiconductor layer. The second wiring is formed on the second gate insulation layer and electrically connected to the first wiring.

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

Abstract: An ink composition for photonic sintering and a method or producing the ink composition, the ink composition includes: metal nanoparticles comprising a first metal satisfying interaction formula 1; an organic non-aqueous binder; and a non-aqueous solvent. Interaction formula 1 is A1/A2?0.2, where A1/A2 is a ratio, in the x-ray photoelectron spectrum on the surface of the first metal, in which first metal 2p3/2 peak area of the oxide of the first metal (A1) is divided by first metal 2p3/2 peak area of the first metal (A2).

Abstract: Display substrates and display devices with reduced electrical resistance are disclosed. One inventive aspect includes a switching device, a first wiring and a second wiring. The switching device includes a first semiconductor layer, first and second gate insulation layers, a source electrode and a drain electrode. The source and drain electrodes are formed to electrically connect, through the first and second gate insulation layers, to the first semiconductor layer. The second wiring is formed on the second gate insulation layer and electrically connected to the first wiring.

Abstract: An organic light emitting display device includes data lines and an auxiliary data line, scan lines and emission control lines crossing the data lines and the auxiliary data line, display pixels at crossing regions of the data lines, the scan lines and the emission control lines, auxiliary pixels at crossing regions of the auxiliary data line, the scan lines and the emission control lines, and auxiliary lines coupled to the auxiliary pixels. Each of the auxiliary pixels includes a discharge transistor coupled to one of the auxiliary lines and a first power voltage line to which a first power voltage is supplied and a discharge transistor controller including a plurality of transistors and configured to control the discharge transistor.

Abstract: A photosensitive composition including a quantum dot; a carboxylic acid group-containing binder; a multi-thiol compound including at least two thiol groups at its terminal ends; a photopolymerizable monomer including a carbon-carbon double bond; a metal oxide fine particle including an organic compound represented by Chemical Formula 1 or a moiety derived from the organic compound at a surface of the metal oxide fine particle; a polymeric stabilizer; a photoinitiator; and a solvent, a production method thereof, a quantum dot polymer composite prepared therefrom, and a layered structure and an electronic device including the same are disclosed: (A?nSi?R)4-n??Chemical Formula 1 wherein n, A, and R are the same as defined in the specification.

Abstract: A layered structure including a luminescent layer including a quantum dot polymer composite pattern; an inorganic layer disposed on the luminescent layer, the inorganic layer including a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof; and an organic layer being disposed between the luminescent layer and the inorganic layer, the organic layer including an organic polymer, a method of producing the same, and a liquid crystal display including the same. The quantum dot polymer composite pattern includes a repeating section including a polymer matrix; and a plurality of quantum dots (e.g., dispersed) in the polymer matrix, the repeating unit including a first section configured to emit light of a first light, and wherein the inorganic layer is disposed on at least a portion of a surface of the repeating section.

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

Abstract: A data driver includes a first data voltage generator, a data converter and a second data voltage generator. The first data voltage generator is configured to generate a first data voltage based on first pixel data and configured to output the first data voltage to a first data line, the first pixel data being generated based on a first gamma curve. The data converter is configured to convert second pixel data to first converted pixel data, the second pixel data being generated based on the first gamma curve, the first converted pixel data being generated based on a second gamma curve different from the first gamma curve. The second data voltage generator is configured to generate a second data voltage based on the first converted pixel data and configured to output the second data voltage to a second data line.

Abstract: A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

Abstract: A device for mixing and supplying fluids comprises: a fixing unit provided with a first flow path through which a first fluid flows, a second flow path through which a second fluid flows, and a through-hole; and a rotating unit, which is rotatably provided on the through-hole so as to penetrate the fixing unit, and which is provided at the front end with a fixing hole into which a processing tool is inserted and fixed, and a communication part which communicates with the first flow path and the fixing hole, so as to mix the first fluid and the second fluid and supply the mixture to the processing tool.

Abstract: A device for simultaneously supplying fluids comprises: a fixing unit provided with a first flow path through which a first fluid flows, a second flow path through which a second fluid flows, and a through-hole; a rotation unit, which is rotatably provided on the through-hole, which is provided at the front end with a fixing hole into which a processing tool is inserted and fixed, and a communication part which communicates with the first flow path and the fixing hole; and a spray unit of which one side is connected to the second flow path and the other side is provided with a spray flow path having a nozzle for spraying the second fluid on an area to be processed by the processing tool, wherein the spray unit is provided on the fixing unit.