Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.

Abstract: A positive electrode active material includes a core and a coating layer disposed on the core, wherein the core includes Li1+xMO2+y, wherein M is at least one element selected from the group consisting of nickel (Ni), cobalt (Co), and copper (Cu), and 1?x?5 and 0?y?2, and the coating layer includes carbon-based particles, wherein the carbon-based particle includes a structure in which a plurality of graphene sheets are connected, the carbon-based particle has an oxygen content of 1 wt % or more in the carbon-based particle, and the carbon-based particle has a D/G peak ratio of 1.55 or less during Raman spectrum measurement. A method of preparing the positive electrode active material, a positive electrode including the positive electrode active material, and a secondary battery including the positive electrode are also provided.

Abstract: A conductive agent, a slurry for forming an electrode, the slurry including the same, an electrode manufactured using the same, and a lithium secondary battery are provided. The conductive agent includes graphene flakes the maximum peak of which is observed in a range of 24.5° to 26° of 2? in a data graph obtained by a X-Ray Diffraction (XRD) analysis, wherein the aspect ratio of the average lateral size of the surfaces of the graphene flakes to the average thickness of the graphene flakes in a direction perpendicular to surfaces of the graphene flakes is 500 to 50,000.

Abstract: A quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In), gallium (Ga), and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein the quantum dot emits green light, wherein in the quantum dot, a mole ratio of gallium with respect to a sum of indium and gallium is less than or equal to about 0.5:1, and wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

Abstract: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0,7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.

Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

Abstract: A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.

Abstract: An embodiment of the present invention provides a system in which it is possible to control a movement speed of a machining unit such that a machining load value of the machining unit is maintained to be equal to or smaller than a reference machining load value, and thus it is possible to lower a defective rate of a machining target and to improve stability of a robot.

Abstract: An ink composition for photonic sintering and a method or producing the ink composition, the ink composition includes: metal nanoparticles comprising a first metal satisfying interaction formula 1; an organic non-aqueous binder; and a non-aqueous solvent. Interaction formula 1 is A1/A2?0.2, where A1/A2 is a ratio, in the x-ray photoelectron spectrum on the surface of the first metal, in which first metal 2p3/2 peak area of the oxide of the first metal (A1) is divided by first metal 2p3/2 peak area of the first metal (A2).

Abstract: A positive electrode and a secondary battery including the same are provided. The positive electrode includes a current collector and a positive electrode active material layer disposed on the current collector, wherein the positive active material layer includes a positive electrode active material, a binder, and a multi-walled carbon nanotube, wherein the multi-walled carbon nanotube has an average length of 1-2 ?m and has a length standard deviation of 0.5 ?m or less.

Abstract: A conductive material, and a method for preparing the same are provided. The conductive material has a structure where a plurality of graphene sheets are interconnected, wherein an oxygen content is 1 wt % or higher based on the total weight of the conductive material, and a D/G peak ratio is 2.0 or less when the Raman spectrum is measured.

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

Abstract: A method of manufacturing a display device includes preparing a plurality of light-emitting element packages on a substrate, preparing a first solution including first semiconductor nanocrystals, applying a voltage to a part of the plurality of light-emitting element packages to transport the first semiconductor nanocrystals to a region overlapped with the part of the plurality of light-emitting element packages, and forming a first color conversion layer with the first semiconductor nanocrystals.

Abstract: A display device includes a first electrode, a pixel define layer disposed on the first electrode, the pixel define layer including an opening, an organic emission layer disposed on the pixel define layer, the organic emission layer in electrical communication with the first electrode through the opening, a second electrode disposed on the organic emission layer, a light recycle layer disposed on the second electrode, and a color filter layer disposed on the light recycle layer, the color filter layer including a quantum dot, wherein a width of the organic emission layer is longer than a width of the color filter layer.

Abstract: An indium-containing quantum dot including a compound represented by Chemical Formula 1: In1-xMxA ??Chemical Formula 1 wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1, wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot, wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, and wherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.

Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.

Abstract: Disclosed herein are an electrode having improved electrode tab welding characteristics configured such that one or more non-coated electrode tabs are provided for a plurality of stacked electrodes having the same polarity in order to maintain welding safety in the case in which the number of electrode layers that are stacked is increased in order to achieve high output and capacity, and a secondary battery including the same. Consequently, it is possible to prevent a plurality of electrode tabs from being cut at the time of welding the electrode tabs. In addition, the lower end of an electrode lead that is welded to non-coated electrode tabs provided for a plurality of stacked electrodes having the same polarity is punched so as to correspond to the non-coated electrode tabs. Consequently, it is possible to improve flexibility for a step formed in the secondary battery electrode.

Abstract: A quantum dot aggregate particle including a plurality of quantum dots, a polyvalent metal compound, and a thiol compound having at least two thiol groups at its end terminals, wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to 10 micrometers.

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.