Abstract: A memory device includes plural non-volatile memory cells and a control circuit. The plural non-volatile memory cells can store data and are arranged in series between a bit line and a source line. The control circuit synchronizes discharge of charges, which are accumulated in a channel formed by the plural non-volatile memory cells, through the bit line and the source line during an erase operation for erasing the data stored in the plural non-volatile memory cells.

Abstract: A memory device includes a memory block and a peripheral circuit. The memory block includes a first word line group of word lines included in the memory block and a second word line group of the word lines included in the memory block. The word lines of the first word line group are different from the word lines of the second word line group. The peripheral circuit provides the first word line group and the second word line group with an equalizing voltage during an equalizing section overlapping an erase voltage discharging section for the memory block to constantly keep voltages of the first word line group and the second word line group to the equalizing voltage.

Abstract: A memory device includes a memory block and a peripheral circuit. The memory block includes a first word line group of word lines included in the memory block and a second word line group of the word lines included in the memory block. The word lines of the first word line group are different from the word lines of the second word line group. The peripheral circuit provides the first word line group and the second word line group with an equalizing voltage during an equalizing section overlapping an erase voltage discharging section for the memory block to constantly keep voltages of the first word line group and the second word line group to the equalizing voltage.

Abstract: A memory device includes plural non-volatile memory cells and a control circuit. The plural non-volatile memory cells can store data and are arranged in series between a bit line and a source line. The control circuit synchronizes discharge of charges, which are accumulated in a channel formed by the plural non-volatile memory cells, through the bit line and the source line during an erase operation for erasing the data stored in the plural non-volatile memory cells.

Abstract: A semiconductor memory apparatus may include a cell string and a page buffer. The cell string may include a drain select transistor coupled with a bit line, and memory cells coupled with the drain select transistor. The page buffer may be coupled to the cell string through the bit line. The page buffer may include a latch and a first current path. The latch may store data of a value indicative of a result of a threshold voltage verification on the drain select transistor. The first current path may set a voltage of the bit line to a program inhibit voltage, based on the value of the data stored in the latch.

Abstract: A semiconductor memory device includes: a memory cell for storing data; a page buffer connected to the memory cell through a bit line, to store data in the memory cell or read data from the memory cell; and a cache latch connected to the page buffer through a bus node. When bit data transmission operation between the page buffer and the cache latch is performed, the bus node is discharged before starting the bit data transmission operation.

Abstract: A semiconductor memory apparatus may include a cell string and a page buffer. The cell string may include a drain select transistor coupled with a bit line, and memory cells coupled with the drain select transistor. The page buffer may be coupled to the cell string through the bit line. The page buffer may include a latch and a first current path. The latch may store data of a value indicative of a result of a threshold voltage verification on the drain select transistor. The first current path may set a voltage of the bit line to a program inhibit voltage, based on the value stored in the latch.

Abstract: A semiconductor memory device includes: a memory cell for storing data; a page buffer connected to the memory cell through a bit line, to store data in the memory cell or read data from the memory cell; and a cache latch connected to the page buffer through a bus node. When bit data transmission operation between the page buffer and the cache latch is performed, the bus node is discharged before starting the bit data transmission operation.

Abstract: A memory device controls a page buffer to ensure the reliability of data. The memory device includes: a memory cell array including a plurality of memory cells configured for storing data; first and second page buffers respectively including main latches and cache latches, which are coupled to a bus, the first and second page buffers being connected to the memory cell array respectively through bit lines coupled to the main latches; and control logic including a bus precharge controller for differently setting a voltage level of the bus, based on a distance between a reference position and the first page buffer and a distance between the reference position and the second page buffer, for precharging of the bus for transmitting data of a cache latch included in each of the first and second page buffers to a corresponding main latch.

Abstract: A memory device controls a page buffer to ensure the reliability of data. The memory device includes: a memory cell array including a plurality of memory cells configured for storing data; first and second page buffers respectively including main latches and cache latches, which are coupled to a bus, the first and second page buffers being connected to the memory cell array respectively through bit lines coupled to the main latches; and control logic including a bus precharge controller for differently setting a voltage level of the bus, based on a distance between a reference position and the first page buffer and a distance between the reference position and the second page buffer, for precharging of the bus for transmitting data of a cache latch included in each of the first and second page buffers to a corresponding main latch.

Abstract: There are provided a block decoder including a control signal generating circuit suitable for generating a control signal in response to address signals, a potential level switch circuit suitable for outputting an internal voltage having an internal power potential level or a negative potential level in response to the control signal, and a voltage apply circuit suitable for outputting a block selecting signal having a high potential level higher than the internal power potential level in response to the control signal and the internal voltage having the internal power potential level, or outputting the internal voltage having the negative potential level as the block selecting signal in response to the control signal.

Abstract: In one example, a voltage generator includes a plurality of voltage pumps, a voltage detection circuit, an oscillator, and a control circuit. The plurality of voltage pumps are configured to perform voltage pumping operations in a sequence and output a pumping voltage. The voltage detection circuit is configured to detect a voltage level of the pumping voltage and output a detection signal. The control circuit is configured to output, in response to the detection signal, a plurality of divided oscillator signals based on an oscillator signal of the oscillator, to enable a different one of the voltage pumps to begin each sequence of voltage pumping operations each time the pumping voltage is less than a threshold voltage.

Abstract: Provided herein is a voltage generating circuit including: a negative voltage pump configured to generate a first negative voltage; and a negative voltage regulator configured to generate a second negative voltage using the first negative voltage and output the second negative voltage through an output terminal. The negative voltage regulator includes a first amplifier circuit configured to be controlled by a voltage of the output terminal, and a voltage booster configured to increase a voltage of the output terminal depending on an output voltage of the first amplifier circuit.

Abstract: In one example, a voltage generator includes a plurality of voltage pumps, a voltage detection circuit, an oscillator, and a control circuit. The plurality of voltage pumps are configured to perform voltage pumping operations in a sequence and output a pumping voltage. The voltage detection circuit is configured to detect a voltage level of the pumping voltage and output a detection signal. The control circuit is configured to output, in response to the detection signal, a plurality of divided oscillator signals based on an oscillator signal of the oscillator, to enable a different one of the voltage pumps to begin each sequence of voltage pumping operations each time the pumping voltage is less than a threshold voltage.

Abstract: In one example, a voltage generator includes a plurality of voltage pumps, a voltage detection circuit, an oscillator, and a control circuit. The plurality of voltage pumps are configured to perform voltage pumping operations in a sequence and output a pumping voltage. The voltage detection circuit is configured to detect a voltage level of the pumping voltage and output a detection signal. The control circuit is configured to output, in response to the detection signal, a plurality of divided oscillator signals based on an oscillator signal of the oscillator, to enable a different one of the voltage pumps to begin each sequence of voltage pumping operations each time the pumping voltage is less than a threshold voltage.

Abstract: Provided herein is a voltage generating circuit including: a negative voltage pump configured to generate a first negative voltage; and a negative voltage regulator configured to generate a second negative voltage using the first negative voltage and output the second negative voltage through an output terminal. The negative voltage regulator includes a first amplifier circuit configured to be controlled by a voltage of the output terminal, and a voltage booster configured to increase a voltage of the output terminal depending on an output voltage of the first amplifier circuit.

Abstract: There are provided a block decoder including a control signal generating circuit suitable for generating a control signal in response to address signals, a potential level switch circuit suitable for outputting an internal voltage having an internal power potential level or a negative potential level in response to the control signal, and a voltage apply circuit suitable for outputting a block selecting signal having a high potential level higher than the internal power potential level in response to the control signal and the internal voltage having the internal power potential level, or outputting the internal voltage having the negative potential level as the block selecting signal in response to the control signal.

Abstract: In one example, a voltage generator includes a plurality of voltage pumps, a voltage detection circuit, an oscillator, and a control circuit. The plurality of voltage pumps are configured to perform voltage pumping operations in a sequence and output a pumping voltage. The voltage detection circuit is configured to detect a voltage level of the pumping voltage and output a detection signal. The control circuit is configured to output, in response to the detection signal, a plurality of divided oscillator signals based on an oscillator signal of the oscillator, to enable a different one of the voltage pumps to begin each sequence of voltage pumping operations each time the pumping voltage is less than a threshold voltage.

Abstract: A semiconductor device may include: a first reference voltage generation unit: suitable for outputting an external voltage as a first reference voltage and clamping the first reference voltage based on a preset voltage in a positive direction from a ground voltage; a first internal voltage generation unit suitable for receiving the external voltage to drive an internal voltage terminal with a drivability corresponding to the first reference voltage; and a second internal voltage generation unit suitable for receiving the external voltage to drive the internal voltage terminal based on a second reference voltage greater than the preset voltage in the positive direction from the ground voltage.

Abstract: A semiconductor memory device includes a standby voltage providing unit. The standby voltage providing unit is configured to receive an external voltage, primarily clamp and secondarily clamp a predetermined voltage, and provide the predetermined voltage as an internal voltage, during a standby mode.