Patents by Inventor Tae-hoon Jang
Tae-hoon Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11971561Abstract: Provided is a retroreflective structure and a light-emitting safety band using same. The retroreflective structure comprises: a switch unit for supplying power, a light source being connected to the switch unit; and a light-emitting unit coupled to the switch unit. The switch unit comprises: a middle plate case having a light transfer body insertion hole formed thereon; an upper plate case coupled to the upper portion of the middle plate case; and a PCB inserted into the middle plate case and the upper plate case. The light-emitting unit comprises: a lower retroreflective film; and a light transfer body installed to be forced against the upper portion of the retroreflective film. The light source is inserted into and installed in a light source insertion groove on an end of the light transfer body having a case engaging unit installed to engage with the light transfer body insertion hole.Type: GrantFiled: April 15, 2019Date of Patent: April 30, 2024Assignee: BUBO CO., LTD.Inventors: Tae Hoon Jang, Hyun Woo Jang
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Publication number: 20240129725Abstract: A service identifying and processing method using a wireless terminal message according to an exemplary embodiment of the present invention includes (a) receiving a wireless terminal message by a first entity which is a mobile device; and (b) expressing, by a first agent which is an information processing application program installed on the first entity, entity information of second entity based on the wireless terminal message and service confirmation information related to service provided by the second entity, through an application screen by the first agent.Type: ApplicationFiled: December 23, 2021Publication date: April 18, 2024Applicant: ESTORM CO., LTD.Inventors: Jong Hyun WOO, Tae Il LEE, Il Jin JUNG, Hee Jun SHIN, Hyung Seok JANG, Min Jae SON, Sang Heon BAEK, Seo Bin PARK, Hyo Sang KWON, Mi Ju KIM, Jung Hoon SONG, Rakhmanov DILSHOD, Dong Hee KIM, Jeon Gjin KIM
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Publication number: 20220099870Abstract: Provided is a retroreflective structure and a light-emitting safety band using same. The retroreflective structure comprises: a switch unit for supplying power, a light source being connected to the switch unit; and a light-emitting unit coupled to the switch unit. The switch unit comprises: a middle plate case having a light transfer body insertion hole formed thereon; an upper plate case coupled to the upper portion of the middle plate case; and a PCB inserted into the middle plate case and the upper plate case. The light-emitting unit comprises: a lower retroreflective film; and a light transfer body installed to be forced against the upper portion of the retroreflective film. The light source is inserted into and installed in a light source insertion groove on an end of the light transfer body having a case engaging unit installed to engage with the light transfer body insertion hole.Type: ApplicationFiled: April 15, 2019Publication date: March 31, 2022Inventors: Tae Hoon JANG, Hyun Woo JANG
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Publication number: 20140082001Abstract: A digital forensic audit system which extracts the event and the document file from the image, analyzes the event and the document file to visualize the event and document file in order to analyze a user's behaviors by scanning a usage trace and a file which is an image recorded in a window system, the system includes a document file extracting unit which extracts a logical level document file and an attribute of the document file from the image; an event extracting unit which extracts an event including time of occurrence from the image and extracts an event from an attribute of the document file related to the time (hereinafter, referred to as a time attribute), an analyzing unit which analyzes the document file or the event by the attribute and the time; and a visualizing unit which displays the analyzed result (hereinafter, referred to as an analysis result) on a time coordinate.Type: ApplicationFiled: May 30, 2013Publication date: March 20, 2014Inventors: Tae Hoon Jang, Hong Sun Lee, Hyo Geun Gwak, Hong Gyu Jeon, Jong Hyun Kim, Bong Seok You, In Hyun Bark, Jin Hak Kim, Jong Seong Ham
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Patent number: 8390018Abstract: A nitride-based semiconductor light emitting device with improved characteristics of ohmic contact to an n-electrode and a method of fabricating the same are provided. The nitride-based semiconductor light emitting device includes an n-electrode, a p-electrode, an n-type compound semiconductor layer, and an active layer and a p-type compound semiconductor layer formed between the n- and p-electrodes. The n-electrode includes: a first electrode layer formed of at least one element selected from the group consisting of Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Os, Cu, Ag, and Au; and a second electrode layer formed on the first electrode layer using a conductive material containing at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Hf, Ta, Mo, W, Re, Ir, Al, In, Pb, Ni, Rh, Ru, Os, and Au.Type: GrantFiled: June 8, 2006Date of Patent: March 5, 2013Assignee: Samsung Electronics Co., Ltd.Inventor: Tae-hoon Jang
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Patent number: 8367443Abstract: Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.Type: GrantFiled: August 10, 2011Date of Patent: February 5, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Youn-joon Sung, Su-hee Chae, Tae-hoon Jang, Kyu-sang Kim
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Publication number: 20110300654Abstract: Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.Type: ApplicationFiled: August 10, 2011Publication date: December 8, 2011Inventors: Youn-joon Sung, Su-hee Chae, Tae-hoon Jang, Kyu-sang Kim
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Patent number: 8017421Abstract: Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.Type: GrantFiled: August 9, 2007Date of Patent: September 13, 2011Assignee: Samsung LED Co., Ltd.Inventors: Youn-joon Sung, Su-hee Chae, Tae-hoon Jang, Kyu-sang Kim
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Patent number: 7632742Abstract: A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.Type: GrantFiled: January 9, 2007Date of Patent: December 15, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-sun Paek, Tae-hoon Jang, Youn-joon Sung, Tan Sakong, Min-ho Yang
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Patent number: 7522649Abstract: Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.Type: GrantFiled: June 7, 2007Date of Patent: April 21, 2009Assignee: Samsung Electronic, Co., LtdInventors: Kyoung-ho Ha, Tae-hoon Jang, Hyung-kun Kim
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Patent number: 7483463Abstract: A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.Type: GrantFiled: August 18, 2006Date of Patent: January 27, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Joong-kon Son, Tae-hoon Jang, Youn-joon Sung, Tan Sakong, Ho-sun Paek, Sung-nam Lee
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Patent number: 7406111Abstract: In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer.Type: GrantFiled: January 27, 2006Date of Patent: July 29, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Youn-joon Sung, Tae-hoon Jang
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Publication number: 20080102549Abstract: Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.Type: ApplicationFiled: August 9, 2007Publication date: May 1, 2008Inventors: Youn-joon Sung, Su-hee Chae, Tae-hoon Jang, Kyu-sang Kim
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Publication number: 20070286252Abstract: Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.Type: ApplicationFiled: June 7, 2007Publication date: December 13, 2007Inventors: Kyoung-ho Ha, Tae-hoon Jang, Hyung-kun Kim
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Patent number: 7276740Abstract: A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.Type: GrantFiled: March 10, 2006Date of Patent: October 2, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Hyung-kun Kim, Su-hee Chae, Tae-hoon Jang
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Publication number: 20070190755Abstract: A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.Type: ApplicationFiled: January 9, 2007Publication date: August 16, 2007Applicant: Samsung Electronics Co., Ltd.Inventors: Ho-sun Paek, Tae-hoon Jang, Youn-Joon Sung, Tan Sakong, Min-ho Yang
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Publication number: 20070023775Abstract: A nitride-based semiconductor light emitting device with improved characteristics of ohmic contact to an n-electrode and a method of fabricating the same are provided. The nitride-based semiconductor light emitting device includes an n-electrode, a p-electrode, an n-type compound semiconductor layer, and an active layer and a p-type compound semiconductor layer formed between the n- and p-electrodes. The n-electrode includes: a first electrode layer formed of at least one element selected from the group consisting of Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Os, Cu, Ag, and Au; and a second electrode layer formed on the first electrode layer using a conductive material containing at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Hf, Ta, Mo, W, Re, Ir, Al, In, Pb, Ni, Rh, Ru, Os, and Au.Type: ApplicationFiled: June 8, 2006Publication date: February 1, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: Tae-hoon Jang
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Publication number: 20060280215Abstract: A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.Type: ApplicationFiled: August 18, 2006Publication date: December 14, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joong-kon Son, Tae-hoon Jang, Youn-loon Sung, Tan Sakong, Ho-sun Paek, Sung-nam Lee
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Publication number: 20060249744Abstract: A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.Type: ApplicationFiled: March 10, 2006Publication date: November 9, 2006Applicant: Samsung Electronics Co., Ltd.Inventors: Hyung-kun Kim, Su-hee Chae, Tae-hoon Jang
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Publication number: 20060249745Abstract: A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.Type: ApplicationFiled: March 24, 2006Publication date: November 9, 2006Applicant: Samsung Electronics Co., Ltd.Inventors: Su-hee Chae, Tae-hoon Jang, Hyung-kun Kim, Youn-joon Sung