Abstract: A method in which a high-quality packet telephony terminal apparatus performing low-latency and lossless packet communication with a counterpart packet telephony terminal apparatus operates in an integrated network structure in which a time sensitive network (TSN) and a packet communication network are combined may be disclosed. The packet telephony terminal apparatus may perform packet telephony call processing, perform a TSN stream reservation procedure when the counterpart packet telephony terminal apparatus is capable of performing a TSN function for lossless packet communication, adjust a size of a dejitter buffer when the TSN stream reservation procedure is successful, and perform low-latency packet telephony communication through the minimized size of the dejitter buffer.

Abstract: An apparatus for fabricating a display panel, the apparatus including: a loading module configured to accommodate a large-area fabricating substrate, the loading module being configured to adjust an inclination of the large-area fabricating substrate from a rear surface of the large-area fabricating substrate and to press the large-area fabricating substrate; and an element transfer module configured to transfer a plurality of light emitting elements or an integrated circuit onto the large-area fabricating substrate and configured to bond and press a wafer on which the plurality of light emitting elements or the at least one integrated circuit is located onto the large-area fabricating substrate.

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

Abstract: An apparatus for fabricating a display panel, including a film fixing module configured to fix a stretched film on which a plurality of light emitting elements are arranged, a film pressurizing module configured to pressurize the stretched film, a first thickness detection module configured to detect, at each pressurization step, a modulus of elasticity and a change in thickness of the stretched film that is pressurized and stretched by the film pressurizing module, a second thickness detection module configured to detect, at each pressurization step, a change in thickness of an adhesive applied in a front direction of the stretched film, an image detection module configured to photograph the plurality of light emitting elements arranged on the stretched film for each pressurization step and to detect a change in arrangement information of the light emitting elements, and a main processor configured to database feature change information.

Abstract: A light source module and an air conditioner including the light source module. The light source module includes: at least one light source emitting sterilizing light in a wavelength band capable of sterilizing pollutants; a substrate on which the light source is mounted, the substrate being electrically connected to the light source; and a light guide guiding a traveling direction of the sterilizing light emitted from the light source. The light guide may guide the sterilizing light such that a beam angle of the light source module becomes narrower than a beam angle of the light source.

Abstract: A vehicle power module includes an upper substrate and a lower substrate spaced from each other in a vertical direction, a semiconductor chip connected to one of the upper substrate and the lower substrate, and a spacer formed of a metal material containing copper and connecting the semiconductor chip to the other of the upper substrate and the lower substrate or to connect the upper substrate to the lower substrate, the spacer including a plurality of penetration portions formed to penetrate an inside thereof.

Abstract: In a soldering structure, a power module having the same, and a method for manufacturing the power module configured for constantly determining a height of a power module when the power module is manufactured, the soldering structure may include a soldering target portion; a metal layer including a bonding surface having a bonding region in which the soldering target portion is bonded by solder; and at least one wire located in the solder within the bonding region.

Abstract: A direct cooling type power module comprising, an enclosure filled with an insulating fluid, a power semiconductor device disposed inside the enclosure and a bonding unit comprising a porous layer, and a thermally conductive layer to which the power semiconductor device is bonded, and allowing the power semiconductor device to exchange heat with the insulating fluid by the porous layer and the thermally conductive layer.

Abstract: In a soldering structure, a power module having the same, and a method for manufacturing the power module configured for constantly determining a height of a power module when the power module is manufactured, the soldering structure may include a soldering target portion; a metal layer including a bonding surface having a bonding region in which the soldering target portion is bonded by solder; and at least one wire located in the solder within the bonding region.

Abstract: A power module for a vehicle includes: a circuit board including a circuit pattern; a semiconductor chip connected to a first side of the circuit board; a lead frame disposed on the circuit board as being spaced apart from the semiconductor chip, and electrically connected to the semiconductor chip; and a cooling channel coupled to a second side of the circuit board and inserted in and jointed to a coolant flow channel of a cooler.

Abstract: A power module includes a power semiconductor device, a first power lead electrically connected to a first power terminal of the power semiconductor device, a second power lead disposed in parallel to the first power lead near the first power lead and electrically connected to a second power terminal of the power semiconductor device, and a conductive plate disposed to be spaced apart from the first power lead or the second power lead by a predetermined distance such that a region overlapping with the first power lead or the second power lead is formed.

Abstract: A power module includes a power semiconductor device, a first power lead electrically connected to a first power terminal of the power semiconductor device, a second power lead disposed in parallel to the first power lead near the first power lead and electrically connected to a second power terminal of the power semiconductor device, and a conductive plate disposed to be spaced apart from the first power lead or the second power lead by a predetermined distance such that a region overlapping with the first power lead or the second power lead is formed.

Abstract: In a soldering structure, a power module having the same, and a method for manufacturing the power module configured for constantly determining a height of a power module when the power module is manufactured, the soldering structure may include a soldering target portion; a metal layer including a bonding surface having a bonding region in which the soldering target portion is bonded by solder; and at least one wire located in the solder within the bonding region.

Abstract: A double-sided cooling type power module according to the present invention includes: an upper substrate including an insulating layer, an upper metal layer bonded to a top of the insulating layer, and a lower metal layer bonded to a bottom of the insulating layer; a lower substrate disposed under the upper substrate and including an insulating layer, an upper metal layer bonded to a top of the insulating layer, and a lower metal layer bonded to a bottom of the insulating layer; a spacer disposed between the upper substrate and the lower substrate and electrically connecting the upper substrate and the lower substrate; and a semiconductor chip disposed between the spacer and the upper substrate or the lower substrate, in which the insulating layers are made of a material of which a coefficient of thermal expansion is 0.8 or more and 1.2 or less times of coefficients of thermal expansion of the metal layers of the upper substrate and the lower substrate.

Abstract: A spacer structure, which connects an insulating substrate and a semiconductor chip of a double-sided-cooled power module, includes: a conductive material layer which is composed of a composite material; an underlying plating layer disposed on the conductive material layer; and a copper plating layer disposed on the underlying plating layer, in which the copper plating layer is in contact with a joining material that joins the spacer to the semiconductor chip and the insulating substrate.

Abstract: A spacer structure, which connects an insulating substrate and a semiconductor chip of a double-sided-cooled power module, includes: a conductive material layer which is composed of a composite material; an underlying plating layer disposed on the conductive material layer; and a copper plating layer disposed on the underlying plating layer, in which the copper plating layer is in contact with a joining material that joins the spacer to the semiconductor chip and the insulating substrate.

Abstract: Disclosed are an electrostatic chuck assembly and a substrate processing apparatus including the same. The substrate processing apparatus comprises a process chamber including an inner space therein, a gas supply unit supplying a process gas into the process chamber, a top electrode section in the process chamber and generating plasma from the process gas, and an electrostatic chuck assembly below the top electrode section in the process chamber. The electrostatic chuck assembly comprises an electrostatic chuck supporting a substrate, a focus ring surrounding an upper portion of the electrostatic chuck, an electrode ring below the focus ring and including a different material from the focus ring, and a brazed bonding layer brazing the focus ring and the electrode ring together, the brazed bonding layer being between the focus ring and the electrode ring.

Abstract: A method of controlling a transmission rate in streaming image from an image transmission device to an image reception device having a system and at least one client includes: receiving, by the system, image information with a first transmission rate from an image transmission device; transmitting, by the system, client image information corresponding to the received image information to the at least one client; receiving, by the system, subsequent image information with a second transmission rate from the image transmission device; and transmitting, by the system, subsequent client image information corresponding to the received subsequent image information to the at least one client, wherein the second transmission rate is determined by the image transmission device based on feedback information provided by the system to the image transmission device.

Abstract: Disclosed are a plasma etching apparatus and a method of manufacturing semiconductor devices using the same. The plasma etching apparatus includes a process chamber. A source supplier is positioned at an upper portion of the process chamber. The source supplier is configured to supply source gases for an etching process. A substrate holder is positioned at a lower portion of the process chamber opposite to the source supplier. The substrate holder is configured to support a substrate. A first power source is configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber. A second power source is configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1. The low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.

Abstract: Disclosed are an electrostatic chuck assembly and a substrate processing apparatus including the same. The substrate processing apparatus comprises a process chamber including an inner space therein, a gas supply unit supplying a process gas into the process chamber, a top electrode section in the process chamber and generating plasma from the process gas, and an electrostatic chuck assembly below the top electrode section in the process chamber. The electrostatic chuck assembly comprises an electrostatic chuck supporting a substrate, a focus ring surrounding an upper portion of the electrostatic chuck, an electrode ring below the focus ring and including a different material from the focus ring, and a brazed bonding layer brazing the focus ring and the electrode ring together, the brazed bonding layer being between the focus ring and the electrode ring.