Abstract: Disclosed are an electrostatic chuck assembly and a substrate processing apparatus including the same. The substrate processing apparatus comprises a process chamber including an inner space therein, a gas supply unit supplying a process gas into the process chamber, a top electrode section in the process chamber and generating plasma from the process gas, and an electrostatic chuck assembly below the top electrode section in the process chamber. The electrostatic chuck assembly comprises an electrostatic chuck supporting a substrate, a focus ring surrounding an upper portion of the electrostatic chuck, an electrode ring below the focus ring and including a different material from the focus ring, and a brazed bonding layer brazing the focus ring and the electrode ring together, the brazed bonding layer being between the focus ring and the electrode ring.

Abstract: Disclosed are a plasma etching apparatus and a method of manufacturing semiconductor devices using the same. The plasma etching apparatus includes a process chamber. A source supplier is positioned at an upper portion of the process chamber. The source supplier is configured to supply source gases for an etching process. A substrate holder is positioned at a lower portion of the process chamber opposite to the source supplier. The substrate holder is configured to support a substrate. A first power source is configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber. A second power source is configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1. The low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.

Abstract: A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.

Abstract: Provided are a method and a system for managing semiconductor manufacturing equipment. The method may be performed using an equipment computer and may include ordering to perform a preventive maintenance to a chamber and parts in the chamber, monitoring a result of the preventive maintenance to the chamber and the parts, and performing a manufacturing process using plasma reaction in the chamber, if the result of the preventive maintenance is normal. The monitoring the result of the preventive maintenance may include a pre-screening method monitoring the result of the preventive maintenance using electric reflection coefficients obtained from the chamber and the parts without using the plasma reaction.

Abstract: An optical sheet assembly. A first base film has a first pattern layer disposed thereon. A second base film is disposed on one surface of the first base film and has a second pattern layer disposed on a top surface thereof. The second pattern layer abuts and supports a bottom surface of the first base film. A third base film is disposed on one surface of the second base film and has light-scattering beads being contained therein and recesses formed in one surface thereof bonded to the second base film. The second pattern layer is oriented in the same direction as the first pattern layer. The diameters of the recesses are greater than diameters of entrances thereof. Each of the first pattern layer and the second pattern layer includes a plurality of protrusions and a plurality of recesses defined between the protrusions.

Abstract: A substrate treatment apparatus may include one or more of a process chamber, a gas supply assembly that may supply one or more gases into the process chamber, a gas exhaust assembly that may exhaust gases from the process chamber, and a gas injector assembly connected to the gas exhaust assembly independently of the process chamber. The gas injector assembly may supply a control gas into the gas exhaust assembly. The apparatus may include a gas injection control device configured to adjustably control the supply of control gas. The gas inject control device may measure an internal pressure of the process chamber and control the supply of control gas based on the internal pressure. The apparatus may include a diffuser that couples the gas injector assembly to the gas exhaust assembly and is configured to diffuse the control gas supplied from the gas injector assembly into the gas exhaust assembly.

Abstract: A plasma generation apparatus is provided. The plasma generation apparatus includes a chamber defining a reaction space that can be isolated from an external environment, an upper electrode provided in an upper portion of the chamber, a lower electrode provided in a lower portion of the chamber, a sidewall electrode provided at a sidewall of the chamber, a radio frequency (RF) pulse power supplier configured to supply RF pulse power to at least one selected from the upper electrode and the lower electrode, and a direct current (DC) pulse power supplier configured to supply DC pulse power to the sidewall electrode.

Abstract: A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract: A method and apparatus for deciding a network coding method based on link utilization are disclosed herein. The method may include a step of setting up an output link utilization reference value of a network intermediate node, a step of calculating an average utilization of output links for each network intermediate node, a step of deciding a network coding method in accordance with the average utilization of the output link for each network intermediate node, a step of consistently updating the average utilization of the output link for each network intermediate node, and a step of changing the network coding method, when a value of the average utilization value is changed.

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract: Provided are a method and a system for managing semiconductor manufacturing equipment. The method may be performed using an equipment computer and may include ordering to perform a preventive maintenance to a chamber and parts in the chamber, monitoring a result of the preventive maintenance to the chamber and the parts, and performing a manufacturing process using plasma reaction in the chamber, if the result of the preventive maintenance is normal. The monitoring the result of the preventive maintenance may include a pre-screening method monitoring the result of the preventive maintenance using electric reflection coefficients obtained from the chamber and the parts without using the plasma reaction.

Abstract: A method and apparatus for deciding a network coding method based on link utilization are disclosed herein. The method may include a step of setting up an output link utilization reference value of a network intermediate node, a step of calculating an average utilization of output links for each network intermediate node, a step of deciding a network coding method in accordance with the average utilization of the output link for each network intermediate node, a step of consistently updating the average utilization of the output link for each network intermediate node, and a step of changing the network coding method, when a value of the average utilization value is changed.

Abstract: A suspension assembly and an actuator having the same, which are of a hard disk drive (HDD). The suspension assembly includes a load beam coupled to an end of a swing arm of an actuator; a flexure attached to the load beam to support the slider; and a tip-tab which extends from a front end of the load beam to contact a ramp when the read/write head is parked, wherein a width of a contact part of the tip-tab that contacts the ramp is wider than other parts of the tip-tab. A width of a part of the tip-tab engaged with the load beam and a width of a front part of the tip-tab are smaller than the width of the contact part. The width of the tip-tab increases gradually from the front end of the load beam up to the contact part, and decreases gradually after the contact part.

Abstract: Provided is a routing method for determining a destination in a computer network having multiple interconnected nodes, the method for measuring packet delays among remotely located gateways and processing routing in application layers of the gateways using the packet delays. The routing method based on packet delay includes the steps of setting a re-routing interval and measuring one-way delays among gateways, exchanging the measured delays among the respective gateways and forming delay time tables, calculating an average one-way delay during the re-routing interval, and if a packet is received, applying the calculated average one-way delay to a predetermined algorithm and determining a path from a source gateway to a destination gateway, the path having the minimum delay. Therefore, an improved routing performance can be achieved in real time transmitting a packet by determining the minimum delay path to a destination by measuring packet delays among remotely located nodes in application layers thereof.

Abstract: Provided is a routing method for determining a destination in a computer network having multiple interconnected nodes, the method for measuring packet delays among remotely located gateways and processing routing in application layers of the gateways using the packet delays. The routing method based on packet delay includes the steps of setting a re-routing interval and measuring one-way delays among gateways, exchanging the measured delays among the respective gateways and forming delay time tables, calculating an average one-way delay during the re-routing interval, and if a packet is received, applying the calculated average one-way delay to a predetermined algorithm and determining a path from a source gateway to a destination gateway, the path having the minimum delay. Therefore, an improved routing performance can be achieved in real time transmitting a packet by determining the minimum delay path to a destination by measuring packet delays among remotely located nodes in application layers thereof.