Abstract: Provided is a smart pixel blind having aesthetics that may be felt by a user by including a plurality of pixels disposed in a two-dimensional array. In the smart pixel blind, driving devices are provided in the respective pixels, and when the user inputs a predetermined shape using a portable terminal, or the like, a main controller receives the input shape and controls the driving devices provided in the respective pixels to allow the input shape to be displayed.

Abstract: Disclosed are an apparatus for protecting a wireless communication device and a wireless communication device comprising the same. The protection apparatus according to one embodiment comprises: a determination unit for detecting a power supply voltage of a wireless communication device for wirelessly transmitting and receiving a signal by generating a magnetic field or reacting therewith, and determining a wireless charging state from the outside when an increase in the power supply voltage, which is greater than or equal to a preset threshold, is detected; and a protection unit for protecting the wireless communication device from a power signal for wireless charging when the wireless charging condition is determined through the determination unit.

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: Provided is a method for separating a nanogenerator, which includes laminating a buffer layer on a sacrificial substrate, making a nanogenerator on the buffer layer, laminating a metal layer on the nanogenerator and separating the nanogenerator from the buffer layer. Here, a nanogenerator is separated by using a stress difference between the sacrificial substrate and the metal layer, instead of an existing method in which a nanogenerator is separated from the sacrificial substrate by means of wet etching or the like. In particular, according to a difference between a tensile stress at the metal layer such as nickel and a compressive stress at the lower silicon substrate, the nanogenerator is intactly separated from the silicon oxide layer serving as a buffer layer. Therefore, the nanogenerator may be separated from the sacrificial substrate in a mechanical way, which is safer and more economic in comparison to an existing chemical separation method using an etching solution.

Abstract: Provided is a flexible device, which includes a flexible substrate, a plurality of electrode lines provided on the flexible substrate and configured to contact the following anisotropic conductive film and then extend to a side of the flexible substrate, an anisotropic conductive film configured to contact the electrode line and laminated on the flexible substrate, a plurality of bumps provided on the anisotropic conductive film, and a circuit board having an electronic device provided at one side thereof and configured to contact the plurality of bumps.

Abstract: Disclosed are a single antenna-based wireless charging and near field communication control apparatus and a user terminal therefor. A single antenna-based wireless charging and near field communication control apparatus according to one embodiment comprises: a switch control unit for detecting a resonance frequency from an input signal of a rectifier in a power receiver and determining whether the detected resonance frequency is a first frequency for wireless charging using a single antenna or a second frequency for near field communication using a single antenna, to generate a control signal; and a switch which is turned on/off for wireless charging or near field communication according to the received control signal from the switch control unit.

Abstract: The present application relates to a swelling tape and a method of filling a gap. The swelling tape is, for example, applied in gaps in which a fluid is present and deformed into a three-dimensional shape to fill the gaps and fix in place objects separated by gaps as needed.

Abstract: A wireless power transfer standard selector of a power receiving device and a method therefor are disclosed. A wireless power transfer standard selector according to one embodiment comprises: a frequency sensor for sensing an input frequency of a rectifier; a boot attempt counter for counting and storing the number of bootings in which an output voltage of a power converter is generated and then disappears; and a selection unit for selecting a wireless power transfer standard method by using the input frequency sensed through the frequency sensor and/or the number of bootings counted through the boot attempt counter.

Abstract: A charge control circuit includes: a charge current control circuit configured to receive an input voltage at a first node, output a sensing current to a second node, and turn on a power transistor; a comparator configured to compare a voltage level of the second node with a voltage level of a third node, wherein the third node receives a charging current from the power transistor; a current mirror configured to generate a mirror current corresponding to the sensing current; and an amplifier configured to receive a first feedback voltage based on the mirror current, and amplify a difference between the first feedback voltage and a reference voltage to generate a switch control signal, wherein in response to the switch control signal and a plurality of control signals, the charge current control circuit is configured to decrease the sensing current and turn on the power transistor.

Abstract: A semiconductor device includes a fuse array section suitable for performing program and read operations; a control signal generation section suitable for generating a precharge control signal and a word line control signal; a bit line control section suitable for controlling a precharge operation of a bit line in response to the precharge control signal and a source signal; and a word line control section suitable for controlling activation of a program word line and a read word line for performing the program and read operations in response to the word line control signal, wherein the control signal generation section controls the word line control signal to be activated after a predetermined time from the activation of the precharge control signal.

Abstract: The invention discloses a press die for electrically assisted manufacturing performing plastic working at a relatively lower temperature than hot working by using an electroplasticity effect that a flow stress inside a material is reduced when a current is applied to the material, the press die for electrically assisted manufacturing including: an upper die and a lower die configured to be disposed at upper and lower portions, having the material disposed therebetween; and at least one electrode pair configured to be disposed in the upper die or the lower die, wherein the electrode pair is configured so that electrodes having different polarities in a width direction of the material face each other.

Abstract: Provided is an electro-spinning type pattern forming apparatus. The electro-spinning type pattern forming apparatus includes a nozzle, a stage, and a fiber guide part. The nozzle has a first voltage applied thereto and spins a spinning solution. The stage is disposed below the nozzle to support a substrate on which a pattern is to be formed and has a second voltage applied thereto. The fiber guide part is disposed between the nozzle and the stage, and transforms the electric field formed between the nozzle and the stage to apply a force, acting in a direction parallel to the stage, to nano-fibers spun from the nozzle. The electro-spinning type pattern forming apparatus can form a nano-fiber pattern arranged in one direction.

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Abstract: A method of controlling an energy storage and an energy storage controlling apparatus are disclosed. The method may include dividing an energy storage of large capacity into virtual energy storages corresponding to respective users based on a required energy amount and a period of use of an energy storage of each of the users, and integrally controlling, for each time, the virtual energy storages corresponding to the respective users based on a management schedule of the energy storage of each of the users.

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

Abstract: Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements.

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: A semiconductor memory device includes: a high frequency signal control unit for receiving an external command address signal, removing noise and glitch from the external command address signal and outputting a first command address signal; a pulse width control unit for controlling a pulse width of the first command address signal or maintaining the pulse width of the first command address signal and outputting a second command address signal with a predetermined pulse width; a refresh operation control unit for generating a row address for a refresh operation in response to the second command address signal; and a memory cell array for performing the a refresh operation in response to the row address.

Abstract: Disclosed are a near field communication module protection apparatus using a magnetic field, and a portable terminal thereof. The near field communication module protection apparatus according to one embodiment of the present invention comprises: a determination unit for determining whether a power receiving unit is in a state of receiving a power signal from a power transmitting unit so as to perform wireless charging; and a protection unit for protecting a near field communication module by blocking the transmission of the power signal to the near field communication module when the state in which the power signal is received is determined by the determination unit.

Abstract: A memory device may include first and second latch sections configured to respectively store a target address and a recent input address, a comparison unit configured to compare an input address with the target address and the recent input address respectively stored in the first and second latch sections, and output a resultant signal, a counting section configured to increase a count corresponding to the recent address stored in the second latch section in response to the resultant signal, and a control unit configured to check the count of the counting section and update the input address to the second latch section in response to the resultant signal.