Abstract: A light-emitting diode (LED) driver configured to generate an LED driving current based on an input signal may include a terminal exposed to outside, a controller configured to identify a first identifier and data from the input signal, identify a second identifier based on a signal applied to the terminal, and when the first identifier and the second identifier are identical to each other, generate a control signal based on the data. The LED driver further may further include a current source configured to generate the LED driving current based on the control signal.

Abstract: A display device according to an embodiment of the present disclosure includes a display panel including a first region, a second region, and a bending part disposed therebetween. A protection layer is disposed on the bending part and a part of the first region adjacent to the bending part. A polarization layer is disposed on the first region and is separated from the protection layer. At least one adhesive layer is disposed on the polarization layer. The at least one adhesive layer includes a first portion overlapping the polarization layer, a second portion covering a part of the protection layer on the first region, and a third portion disposed between the first portion and the second portion and disposed on a separation space between the polarization layer and the protection layer.

Abstract: A method of preparing a positive electrode active material for a secondary battery includes preparing a lithium composite transition metal oxide which includes nickel, cobalt, and manganese and contains 60 mol % or more of the nickel among all metals except lithium, adding a moisture absorbent and the lithium composite transition metal oxide into an atomic layer deposition (ALD) reactor, and adding a coating metal precursor into the atomic layer deposition (ALD) reactor and forming a metal oxide coating layer on surfaces of particles of the lithium composite transition metal oxide by atomic layer deposition (ALD).

Abstract: A power manager circuit is provided. The power manager circuit includes a bandgap reference circuit, first and second monitoring circuits, and a reference buffer. The bandgap reference circuit generates a first voltage, based on an external voltage that is external to the power manager circuit. The first monitoring circuit determines a logical value of a first alarm signal, based on whether a first voltage level of the first voltage is within a first range. The reference buffer generates a second voltage, based on the first voltage. The second monitoring circuit determines a logical value of a second alarm signal, based on whether a second voltage level of the second voltage is within a second range.

Abstract: A semiconductor device includes a first and second channel patterns on a substrate, each of the first and second channel patterns including vertically-stacked semiconductor patterns; a first source/drain pattern connected to the first channel pattern; a second source/drain pattern connected to the second channel pattern, the first and second source/drain patterns having different conductivity types; a first contact plug inserted in the first source/drain pattern, and a second contact plug inserted in the second source/drain pattern; a first interface layer interposed between the first source/drain pattern and the first contact plug; and a second interface layer interposed between the second source/drain pattern and the second contact plug, the first and second interface layers including different metallic elements from each other, a bottom portion of the second interface layer being positioned at a level that is lower than a bottom surface of a topmost one of the semiconductor patterns.

Abstract: A method of generating action history data of an application according to an embodiment of the present disclosure is performed by a computing device. The method includes acquiring a first log generated by an application, acquiring a second log generated by a database (DB), matching application log entries included in the first log to DB log entries included in the second log, and generating action history data about actions performed by the application on the basis of a result of the matching.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: A booth module for exhibition includes: a frame; a main body dowel; a bolt detachably coupled to the main body dowel; and a cap dowel detachably coupled to the bolt, wherein the main body dowel has: a body having a bolt insertion hole formed therein; a button of which a part is inserted and installed in the body through a button installation hole formed in the body; and a spring installed inside the body and pushing one end of the button, and wherein the cap dowel has: a body having a bolt insertion hole formed therein; a button of which a part is inserted and installed in the body through a button installation hole formed in the body; and a spring installed inside the body and pushing one end of the button, wherein the buttons are provided with bolt through holes communicating with the bolt insertion holes.

Abstract: An apparatus for limiting a movement of a wiring harness includes a binding unit configured to bind the wiring harness electrically connected to a moving component configured to be movable relative to a vehicle body, the binding unit configured to be movable according to a movement of the moving component, and a guide track configured to guide a movement of the binding unit, wherein the guide track defines a movement path of the binding unit.

Abstract: A lithium cobalt-based positive electrode active material is provided. The lithium cobalt-based positive electrode active material includes a core portion including a lithium cobalt-based oxide represented by Formula 1 and a shell portion including a lithium cobalt-based oxide represented by Formula 2, wherein the lithium cobalt-based positive electrode active material includes 2500 ppm or more, preferably 3000 ppm or more of a doping element M based on the total weight of the positive electrode active material. An inflection point does not appear in a voltage profile measured during charging/discharging a secondary battery including the lithium cobalt-based positive electrode active material.

Abstract: The present invention relates to an electrode of a double-layer structure including a different type of particulate active material having a different average particle diameter, and a secondary battery including the same, and according to the present invention, the mechanical strength and stability of the electrode increases, and the secondary battery to which they are applied exhibits excellent discharge capacity.

Abstract: The present disclosure relates to a positive electrode material which includes a first positive electrode active material, and a second positive electrode active material in the form of a single particle, wherein an amount of lithium impurities on a surface of the second positive electrode active material is 0.14 wt % or less based on a total weight of the second positive electrode active material, and at least one of nickel, cobalt, and manganese included in the second positive electrode active material has a concentration gradient gradually changing from the center of the particle to a surface thereof, a method of preparing the positive electrode material, and a positive electrode for a lithium secondary battery and a lithium secondary battery which include the positive electrode material.

Abstract: A memory system includes: a memory controller suitable for: generating a normal refresh command and a target refresh command when a number of inputs of an active command reaches a certain number, and providing the active command, the normal refresh command, the target refresh command, and an address; and a memory device including a plurality of banks and suitable for: performing a target refresh operation on one or more word lines of at least one bank in response to the target refresh command, determining a row hammer risk level per bank by counting, within a periodic interval, a number of inputs of the target refresh command per bank based on the address, and performing a hidden refresh operation corresponding to the row hammer risk level per bank in response to the normal refresh command.

Abstract: A semiconductor device includes a first and second channel patterns on a substrate, each of the first and second channel patterns including vertically-stacked semiconductor patterns; a first source/drain pattern connected to the first channel pattern; a second source/drain pattern connected to the second channel pattern, the first and second source/drain patterns having different conductivity types from each other; a first contact plug inserted in the first source/drain pattern, and a second contact plug inserted in the second source/drain pattern; a first interface layer interposed between the first source/drain pattern and the first contact plug; and a second interface layer interposed between the second source/drain pattern and the second contact plug, the first and second interface layers including different metallic elements from each other, a bottom portion of the second interface layer being positioned at a level that is lower than a bottom surface of a topmost one of the semiconductor patterns.

Abstract: A memory module includes: a plurality of memories, wherein each of the memories comprises: an encryption key storage circuit suitable for storing an encryption key; an address encryption circuit suitable for generating an encrypted address by encrypting an address transferred from a memory controller by using the encryption key stored in the encryption key storage circuit; and a cell array accessed by the encrypted address, wherein the encryption key storage circuits of the memories store different encryption keys.

Abstract: Provided is a welding apparatus having a fume elimination function. The welding apparatus efficiently eliminates fume generated while a welding object is being welded using a laser.

Abstract: Provided are a power brokerage method and a power brokerage system, and the power brokerage system stores encrypted power brokerage and trading information and a digitally signed hash value in a blockchain distributed ledger through a smart contract code running on a blockchain platform and allows the same to be retrieved. Also, the power brokerage system protects sensitive information related to a brokerage trading contract, a bid, and a settlement by allowing a participant participating in the power market to retrieve original data related to power brokerage and trading information from a power trading server and to compare and verify data forgery/falsification and, at the same time, ensures data integrity and transparency of a brokerage contract and trading.

Abstract: A FINFET includes a substrate having a semiconductor fin extending upward from a first surface thereof, and first and second power rails on first and second opposing sides of the semiconductor fin, respectively. A base of the semiconductor fin may be recessed within a trench within the surface of the substrate, and the first and second power rails may at least partially fill the trench. A through-substrate via may be provided, which extends from adjacent a second surface of the substrate to at least one of the first and second power rails. A source/drain contact is also provided, which is electrically connected to a source/drain region of the FINFET and at least one of the first and second power rails.

Abstract: A display device includes first and second gate lines extending in a first direction; first and second data lines extending in a second direction and crossing the first and second gate lines; and a first horizontal pixel row including first, second, and third sub-pixels sequentially arranged in the first direction, wherein the first sub-pixel is connected to the first gate line and the first data line, the second sub-pixel is connected to the second gate line and the first data line, and the third sub-pixel is connected to the first gate line and the second data line.

Abstract: A semiconductor memory device comprises: first storage logic configured to store, as first addresses, ‘K’ addresses having different values among input addresses applied during the enable period of a reference signal, second storage logic configured to store, as second addresses, ‘L’ addresses corresponding to a time point at which the enable period of the reference signal is ended among the input addresses, an order controller configured to determine a first output order of each of the first addresses based on a number of times each of the first addresses is repeatedly input, and to determine a second output order for outputting mixed addresses obtained by mixing the first addresses based on the first output order and the second addresses together, and refresh operation logic configured to apply the mixed addresses according to the second output order, to a target refresh operation.