Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

Abstract: The present invention relates to a carbon composite, which comprises a polymer resin and a carbon material having specific conditions, thereby controlling a dielectric constant. According to the present invention, the carbon composite and a method for controlling a dielectric constant by using the same can be variously applied to a circuit, an electronic material and the like by establishing a correlation between the specific surface area of the carbon material and the dielectric property of the carbon composite.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR??Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A method of making a natural fiber composite panel includes extracting bamboo fibers from bamboo and embedding the extracted bamboo fibers in a polymer matrix material. The bamboo includes bamboo fibers and lignin, and the step of extracting includes mechanically scraping the bamboo fibers to remove at least some of the lignin. In some cases, the bamboo is steamed, soaked in water, soaked in an acidic solution and/or soaked in an alkaline solution before mechanical scraping.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: The present invention relates to a display device including a speaker using piezoelectric elements having an amplification effect in a low frequency range.

Abstract: A system on chip includes a clock generator configured to generate a clock signal, and output the clock signal to a component device external to the system on chip. The system on chip further includes a duty ratio determiner configured to determine a component duty ratio, in response to a response that is received from the component device according to the clock signal, and a duty ratio adjustor configured to adjust a current duty ratio of the clock signal to the component duty ratio, and output the clock signal of which the current duty ratio is adjusted, to the component device.

Abstract: A method of controlling a terminal is provided. The method includes analyzing a sensed voice when a voice is sensed, recognizing a context based a result of the analysis, and performing a predetermined control operation based on the recognized context.

Abstract: A semiconductor-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2 or a combination thereof, wherein Chemical Formula 1 and Chemical Formula 2 are given below and are the same as described in detail herein.

Abstract: A method of manufacturing a microneedle includes selecting and providing a microneedle material whose viscosity/elastic modulus measured for each shear rate using a viscoelasticity measuring equipment falls in a range between a predetermined upper limit and a predetermined lower limit, and manufacturing the microneedle using the microneedle material by an extension process.

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.

Abstract: An armrest apparatus for a vehicle includes: a lower arm located on a side surface of a seat and configured to rotate with respect to the seat by power of a lower arm motor; and an upper arm extending along a lengthwise direction of the lower arm and configured to rotate with respect to the lower arm by power of an upper arm motor.

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.

Abstract: An example method of an electronic device according to various embodiments of the present disclosure may include indicating that a first screen related to a first application operating in a background state is being displayed in an external electronic device, connected to the electronic device, based on data transmitted from the electronic device; and displaying an object floating on a second screen being displayed on the electronic device.

Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

Abstract: A variable air hole covering flap device is provided and selectively opens or closes an air hole formed in a wheel deflector or a wheel cover to allow air to be introduced toward a brake. The air hole is opened only when brake cooling of a vehicle is more necessary than aerodynamic performance of the vehicle to properly control the aerodynamic performance and the brake cooling performance of the vehicle as necessary.