Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.

Abstract: Disclosed are a carbon substrate for a gas diffusion layer of a fuel cell, a gas diffusion layer employing the same, an electrode for a fuel cell, a membrane electrode assembly for a fuel cell, and a fuel cell, wherein the carbon substrate includes a plate-shaped substrate having an upper surface and a lower surface opposite the upper surface, and the plate-shaped substrate includes carbon fibers arranged to extend in one direction (extend unidirectionally) and a carbide of an organic polymer located between the carbon fibers to bind the carbon fibers to each other.

Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.

Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

Abstract: A method and system for energy improvement verification of buildings. An energy improvement learning method includes receiving building characteristic information related to an existing building constructed in the past and a diagnosis result of energy diagnosis performed based on the building characteristic information, receiving a result of renovating the existing building using energy saving schemes suitable for the diagnosis result, and generating an energy improvement learning model for the existing building by learning the building characteristic information and the renovation result.

Abstract: A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.

Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

Abstract: The present invention relates to a carbon composite, which comprises a polymer resin and a carbon material having specific conditions, thereby controlling a dielectric constant. According to the present invention, the carbon composite and a method for controlling a dielectric constant by using the same can be variously applied to a circuit, an electronic material and the like by establishing a correlation between the specific surface area of the carbon material and the dielectric property of the carbon composite.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: A method of making a natural fiber composite panel includes extracting bamboo fibers from bamboo and embedding the extracted bamboo fibers in a polymer matrix material. The bamboo includes bamboo fibers and lignin, and the step of extracting includes mechanically scraping the bamboo fibers to remove at least some of the lignin. In some cases, the bamboo is steamed, soaked in water, soaked in an acidic solution and/or soaked in an alkaline solution before mechanical scraping.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR??Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

Abstract: The present invention relates to a display device including a speaker using piezoelectric elements having an amplification effect in a low frequency range.

Abstract: A method of controlling a terminal is provided. The method includes analyzing a sensed voice when a voice is sensed, recognizing a context based a result of the analysis, and performing a predetermined control operation based on the recognized context.

Abstract: A system on chip includes a clock generator configured to generate a clock signal, and output the clock signal to a component device external to the system on chip. The system on chip further includes a duty ratio determiner configured to determine a component duty ratio, in response to a response that is received from the component device according to the clock signal, and a duty ratio adjustor configured to adjust a current duty ratio of the clock signal to the component duty ratio, and output the clock signal of which the current duty ratio is adjusted, to the component device.

Abstract: A semiconductor-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2 or a combination thereof, wherein Chemical Formula 1 and Chemical Formula 2 are given below and are the same as described in detail herein.

Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.