Patents by Inventor Tae-Joo Park

Tae-Joo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240096888
    Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.
    Type: Application
    Filed: September 8, 2022
    Publication date: March 21, 2024
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Hae Ju CHOI, Tae Ho KANG, Chan Woo KANG, Hyeon Je SON, Jin Hong PARK, Sung Joo LEE, Sung Pyo BAEK
  • Patent number: 11935984
    Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: March 19, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Seok Han, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang
  • Publication number: 20240089809
    Abstract: A handover method of a first terminal in a wireless communication system may comprise: transmitting a first measurement report message to a first cell that is a primary cell (PCell); receiving, from the first cell, one or more first configuration messages for one or more target cells determined according to the first measurement report message; adding each of the one or more target cells as a candidate PCell based on the one or more first configuration messages; and performing data transmission and reception with at least one cell among the first cell and the one or more candidate PCells.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 14, 2024
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun Seo PARK, Yun Joo KIM, Eunkyung KIM, Tae Joong KIM, An Seok LEE, Yu Ro LEE, Heesoo LEE
  • Patent number: 11925043
    Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: March 5, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Heejae Lee, Eun Joo Jang, Tae Ho Kim, Kun Su Park, Won Sik Yoon, Hyo Sook Jang
  • Patent number: 11871687
    Abstract: Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: January 9, 2024
    Assignees: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Sang Woon Lee, Tae Joo Park, Hae Jun Jung, Sung Min Kim, Hye Ju Kim, Seong Hwan Kim
  • Patent number: 11830549
    Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: November 28, 2023
    Assignees: SK hynix Inc., Industry-University Cooperation Foundation Hanyang University ERICA Campus
    Inventors: Tae Jung Ha, Soo Gil Kim, Jeong Hwan Song, Tae Joo Park, Tae Jun Seok, Hye Rim Kim, Hyun Seung Choi
  • Publication number: 20230265559
    Abstract: An alloy thin film manufacturing method is provided. The alloy thin film manufacturing method may comprise the steps of: preparing a substrate; providing, onto the substrate, a first precursor comprising a first metal; and providing, onto the substrate onto which the first precursor has been provided, a second precursor comprising a second metal, so as to form an alloy thin film of the first metal and the second metal, obtained through the reaction of the first precursor and the second precursor.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Tae Joo Park, Ji Won Han
  • Publication number: 20230189650
    Abstract: Provided is a preparation method for a thermoelectric composite. The preparation method for a thermoelectric composite comprises the steps of: preparing a base substrate containing a first binary metal oxide; and providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second biliary metal oxide resulting from the reaction of the metal precursor and the reaction material, wherein in the step of forming the material film, a 2-dimensional electron gas is generated between the base substrate and the material film as the material film is formed on the base substrate.
    Type: Application
    Filed: February 2, 2023
    Publication date: June 15, 2023
    Applicants: Industry-University Cooperation Foundation Hanyang University Erica Campus, Ajou University Industry-Academic Cooperation Foundation
    Inventors: Tae Joo Park, Sang Woon Lee, Dae Woong Kim, Tae Jun Seok, Jae Hyun Yoon, Ji Hyeon Choi
  • Patent number: 11649545
    Abstract: A method for manufacturing a transition metal-dichalcogenide thin film is provided. The method for manufacturing a transition metal-dichalcogenide thin film can comprise the steps of: preparing a base substrate within a chamber; preparing a precursor comprising a transition metal; repeatedly carrying out, multiple times, a step of providing the precursor on the base substrate and a step of purging the chamber, thereby forming, on the base substrate, a preliminary thin film in which the precursor is adsorbed; and manufacturing a transition metal-dichalcogenide thin film by heat treating the preliminary thin film in a gas atmosphere comprising a chalcogen element.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: May 16, 2023
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Tae Joo Park, Dae Hyun Kim, Daewoong Kim, Tae Jun Seok, Hyunsoo Jin
  • Publication number: 20230097366
    Abstract: Provided is an electronic device including a lower material film, an upper material film on the lower material film, a two-dimensional electron gas between the lower material film and the upper material film, a source electrode on the upper material film, a drain electrode on the upper material film, and a gate electrode on the upper material film, wherein the upper material film includes a first portion in contact with the source electrode, a second portion in contact with the gate electrode, and a third portion in contact with the drain electrode, wherein a thickness of the second portion of the upper material film is greater than a thickness of the first portion of the upper material film and a thickness of the third portion of the upper material film, wherein the voltage drop and the threshold voltage are adjusted by adjusting the thicknesses of the first to third portions of the upper material film.
    Type: Application
    Filed: September 26, 2022
    Publication date: March 30, 2023
    Applicants: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS, AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Tae Joo PARK, Sang Woon LEE, Tae Jun SEOK, Ji Hyeon CHOI
  • Publication number: 20230101276
    Abstract: Provided is an electronic device including a first lower material film, a first upper material film on the first lower material film, a first two-dimensional electron gas between the first lower material film and the first upper material film, a second lower material film on the first upper material film, a second upper material film on the second lower material film, a second two-dimensional electron gas between the second lower material film and the second upper material film, a source electrode on the second upper material film, a drain electrode on the second upper material film, a gate insulating film on the second upper material film, and a gate electrode on the gate insulating film.
    Type: Application
    Filed: September 26, 2022
    Publication date: March 30, 2023
    Applicants: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS, AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Tae Joo PARK, Sang Woon LEE, Tae Jun SEOK, Ji Hyeon CHOI
  • Publication number: 20230005537
    Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 5, 2023
    Inventors: Tae Jung HA, Soo Gil KIM, Jeong Hwan SONG, Tae Joo PARK, Tae Jun SEOK, Hye Rim KIM, Hyun Seung CHOI
  • Publication number: 20220407002
    Abstract: Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.
    Type: Application
    Filed: September 17, 2020
    Publication date: December 22, 2022
    Applicants: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Sang Woon LEE, Tae Joo PARK, Hae Jun JUNG, Sung Min KIM, Hye Ju KIM, Seong Hwan KIM
  • Publication number: 20220344673
    Abstract: Disclosed are a catalyst for an electrochemical cell and a method of manufacturing the catalyst. The catalyst includes a support, a first catalyst supported on the support, wherein the first catalyst is a catalyst for hydrogen oxidation reaction (HOR) or oxygen reduction reaction (ORR), a second catalyst supported on the first catalyst, wherein the second catalyst is a catalyst for oxygen evolution reaction (OER), and a protective layer formed on the first catalyst and the second catalyst.
    Type: Application
    Filed: April 19, 2022
    Publication date: October 27, 2022
    Inventors: Jung Han Yu, Joo Young Kim, Tae Joo Park, Dae Woong Kim, Min Ji Lee
  • Publication number: 20220190318
    Abstract: A method for manufacturing an electrode structure is provided. The method for manufacturing an electrode structure comprises the steps of: preparing a base substrate; forming an amorphous seed layer covering the base substrate; crystallizing the seed layer; and covering the crystallized seed layer and forming a functional film for a secondary battery inherently having a crystalline structure.
    Type: Application
    Filed: March 30, 2020
    Publication date: June 16, 2022
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Tae Joo Park, Dae Woong Kim, Kyu Moon Kwon
  • Publication number: 20220145466
    Abstract: A material layer manufacturing method is provided. The material layer manufacturing method may comprise the steps of: preparing a substrate having a base pattern formed thereon; providing a first precursor on the substrate having the base pattern formed thereon, in a state where a first voltage is applied to the base pattern; and providing a second precursor on the substrate having the first precursor provided thereon, in a state where a second voltage is applied to the base pattern, to form, on the substrate having the base pattern formed thereon, a material layer resulting from the reaction of the first precursor with the second precursor.
    Type: Application
    Filed: December 20, 2021
    Publication date: May 12, 2022
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Tae Joo Park, Ji Won Han
  • Publication number: 20210401935
    Abstract: A pharmaceutical composition for preventing or treating cartilage diseases, and pharmaceutical preparation that includes the pharmaceutical composition as an active ingredient are provided. The pharmaceutical composition includes, as an active ingredient, at least one of an integrin beta-like 1 (ITGBL1) protein, ITGBL1 DNA or RNA encoding the ITGBL1 protein.
    Type: Application
    Filed: September 7, 2021
    Publication date: December 30, 2021
    Inventors: Tae Joo PARK, Eun Kyung SONG
  • Publication number: 20210273158
    Abstract: A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).
    Type: Application
    Filed: May 11, 2021
    Publication date: September 2, 2021
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Tae Joo Park, Dae Woong Kim, Tae Jun Seok, Hye Rim Kim
  • Publication number: 20200277700
    Abstract: A method for manufacturing a transition metal-dichalcogenide thin film is provided. The method for manufacturing a transition metal-dichalcogenide thin film can comprise the steps of: preparing a base substrate within a chamber; preparing a precursor comprising a transition metal; repeatedly carrying out, multiple times, a step of providing the precursor on the base substrate and a step of purging the chamber, thereby forming, on the base substrate, a preliminary thin film in which the precursor is adsorbed; and manufacturing a transition metal-dichalcogenide thin film by heat treating the preliminary thin film in a gas atmosphere comprising a chalcogen element.
    Type: Application
    Filed: May 15, 2020
    Publication date: September 3, 2020
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Tae Joo Park, Dae Hyun Kim, Daewoong Kim, Tae Jun Seok, Hyunsoo Jin
  • Publication number: 20190160149
    Abstract: A pharmaceutical composition for preventing or treating cartilage diseases, and pharmaceutical preparation that includes the pharmaceutical composition as an active ingredient are provided.
    Type: Application
    Filed: November 9, 2018
    Publication date: May 30, 2019
    Inventors: Tae Joo Park, Eun Kyung Song