Abstract: A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).

Abstract: A method for manufacturing a transition metal-dichalcogenide thin film is provided. The method for manufacturing a transition metal-dichalcogenide thin film can comprise the steps of: preparing a base substrate within a chamber; preparing a precursor comprising a transition metal; repeatedly carrying out, multiple times, a step of providing the precursor on the base substrate and a step of purging the chamber, thereby forming, on the base substrate, a preliminary thin film in which the precursor is adsorbed; and manufacturing a transition metal-dichalcogenide thin film by heat treating the preliminary thin film in a gas atmosphere comprising a chalcogen element.

Abstract: A pharmaceutical composition for preventing or treating cartilage diseases, and pharmaceutical preparation that includes the pharmaceutical composition as an active ingredient are provided.

Abstract: A solar cell is provided. The solar cell includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type disposed on the first semiconductor layer, an anti-reflection layer on the second semiconductor layer, and a negative charge layer between the anti-reflection layer and the second semiconductor layer.

Abstract: Provided are group III-V semiconductor transistors and methods of manufacturing the same. The method includes forming a group III-V semiconductor channel layer on a substrate, forming a gate insulating layer covering the group III-V semiconductor channel layer, and forming a protection layer including sulfur between the group III-V semiconductor channel layer and the gate insulating layer by annealing the substrate under a sulfur atmosphere.

Abstract: A method for the quantification of equivalence between mutational phenotypes to develop non-obvious human disease models is described herein. The present inventors discover candidate genes for diseases of interest by: first, identifying orthologous phenotypes (called phenologs) involving the phenotype of interest (the first phenotype), in which a set of genes is associated with the first phenotype in the first organism, a set of genes is associated with a second phenotype in a second organism, the first and second phenotypes not having one or more common characteristics, and the second phenotype is selected such that at least one gene belongs to both the first and second phenotype gene sets; second, selecting from the second organism one or more second phenotype genes, other than the genes known to overlap the first and second phenotypes, as candidates for also belonging to the first phenotype in the first organism.

Abstract: A resistance memory element, a phase change memory element, a resistance random access memory device, an information reading method thereof, a phase change random access memory device, and an information reading method thereof are provided. The resistance random access memory device includes an array of resistance memory element arranged in a matrix. Each resistance memory element includes a substrate in which a source region and a drain region are formed along the column direction and a channel region is formed between the source region and the drain region, a bit line formed on the channel region out of a conductive material to have a shape extending along the arrangement direction of the columns, a resistance switching layer formed on the bit line out of a material of which electrical resistance is switched by an electrical signal, and a word line formed on the resistance switching layer out of a conductive material to have a shape extending along the row direction.

Abstract: A resistance memory element, a phase change memory element, a resistance random access memory device, an information reading method thereof, a phase change random access memory device, and an information reading method thereof are provided. The resistance random access memory device includes an array of resistance memory element arranged in a matrix. Each resistance memory element includes a substrate in which a source region and a drain region are formed along the column direction and a channel region is formed between the source region and the drain region, a bit line formed on the channel region out of a conductive material to have a shape extending along the arrangement direction of the columns, a resistance switching layer formed on the bit line out of a material of which electrical resistance is switched by an electrical signal, and a word line formed on the resistance switching layer out of a conductive material to have a shape extending along the row direction.