Abstract: A mobile terminal including an input unit configured to receive an input to activate a voice recognition function on the mobile terminal and a memory configured to store multiple domains related to menus and operations of the mobile terminal. It further includes a controller configured to access a specific domain among the multiple domains included in the memory based on the received input to activate the voice recognition function, to recognize user speech based on a language model and an acoustic model of the accessed domain, and to determine at least one menu and operation of the mobile terminal based on the accessed specific domain and the recognized user speech.

Abstract: A touch screen panel includes a substrate, first sensing patterns formed in a first direction on the substrate, and second sensing patterns formed in a second direction intersected with the first direction on the substrate. The first sensing patterns include first sensing cells formed in an independent shape, respectively, between the second sensing patterns, and first connection patterns, the first connection patterns including a plurality of island patterns and a plurality of bridge patterns, the island patterns being separated and patterned in island shape in the second sensing patterns, the plurality of bridge patterns connecting between the first sensing cells and the island patterns or connecting between two adjacent island patterns, the first connection patterns connecting to the first sensing cells in the first direction.

Abstract: A mobile terminal and controlling method thereof are disclosed. According to the present invention, when audio information including recorded voice of a correspondent party is displayed on a screen of a mobile terminal, contact information matching the audio information of the correspondent party stored in the mobile terminal is searched and displayed on the screen. Therefore, a user is able to directly contact the correspondent party having recorded the audio information within the screen.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

Abstract: Method of manufacturing a photovoltaic device and a photovoltaic device manufactured by using the method. The method includes forming a first conductive-type semiconductor layer using a first impurity on a semiconductor substrate, performing doping on a region of the first conductive-type semiconductor layer using a laser such that the region of the first conductive-type semiconductor layer has a higher concentration of the first impurity than a remaining portion of the first conductive-type semiconductor layer, performing edge isolation to form a groove portion at an edge portion of a rear surface of the semiconductor substrate, forming an antireflection layer on a front surface of the semiconductor substrate, forming a first metal electrode on the front surface of the semiconductor substrate, and forming a second metal electrode and a second conductive-type semiconductor layer including a second impurity that is different from the first impurity, on the rear surface of the semiconductor substrate.

Abstract: Provided are a medical suture having micro cogs on a surface thereof and a method of manufacturing the medical suture. The method of manufacturing a medical suture includes steps of: producing a suture preform where micro cogs are formed on a surface thereof by heating and pressing a raw material of a suture for surgery in an overflow mould in a heat-press solid-phase forming method; and producing a suture with twist maintained by applying a tensile force and a rotational force to the suture preform in a vacuum state where a specific temperature condition is maintained.

Abstract: A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

Abstract: A plasma display panel includes a pair of substrates facing each other, barrier ribs defining discharge cells between the pair of substrates, sustain electrodes between the pair of substrates, the sustain electrodes including second bus electrodes along a first direction, the second bus electrodes being on the barrier ribs, scan electrodes between the pair of substrates, the scan electrodes including first bus electrodes along the first direction, the first bus electrodes being positioned between adjacent second bus electrodes, address electrodes between the pair of substrates, the address, scan, and sustain electrodes being configured to generate discharge in the discharge cells, and phosphors in the discharge cells, the phosphors being configured to emit light by the discharge.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: A driving method of a plasma display device with reduced black luminance is provided. During at least one TV field without a main reset period, the at least one TV field including a first subfield and a second subfield having a reset waveform in a reset period of the first subfield and the second subfield, respectively, the method includes: applying a first scan low voltage or a first scan high voltage to a scan electrode during an address period of the first subfield; and applying a second scan low voltage or a second scan high voltage to the scan electrode during an address period of the second subfield, wherein the first and the second scan low voltages are maintained at a constant level for a period of time in the first and second subfields, respectively, and the first scan low voltage is different from the second scan low voltage.

Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

Abstract: A mobile terminal and controlling method thereof are disclosed. According to the present invention, when audio information including recorded voice of a correspondent party is displayed on a screen of a mobile terminal, contact information matching the audio information of the correspondent party stored in the mobile terminal is searched and displayed on the screen. Therefore, a user is able to directly contact the correspondent party having recorded the audio information within the screen.

Abstract: A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

Abstract: A plasma display device and a method of driving the same according to the black load of a displayed image. The plasma display device includes a plurality of first electrodes and a plurality of second electrodes extending in parallel, a plurality of pixels each having a plurality of discharge cells defined by the first and the second electrodes, a driver adapted to apply a first reset waveform to the first electrodes and a second reset waveform to the second electrodes during a reset period, and a controller adapted to adjust at least one of a voltage of the first reset waveform or a voltage of the second reset waveform in accordance with a black load of an image signal corresponding to the plurality of pixels.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: A plasma display panel includes electrodes repeatedly disposed on a first substrate in an order of a sustain electrode, a scan electrode, a scan electrode and a sustain electrode, first barrier ribs disposed to overlap the sustain electrodes, and second barrier ribs disposed to overlap the scan electrodes and having a lower height than the first barrier ribs, wherein a space between the first barrier ribs and the second barrier ribs forms a main discharge space, a space between adjacent first barrier ribs forms an auxiliary discharge space, and the scan electrodes are formed to protrude to the auxiliary discharge space.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: A light emitting diode package according to an aspect of the invention may include: a body receiving a light emitting diode; a lead electrically connected to the light emitting diode; and an adapter receiving a modified electrode electrically connected to the lead so that the polarity of the modified electrode is changed into the polarity of the lead, the adapter in which the body is received and fixed.

Abstract: A plasma display panel that reduces power consumption, improves visual discharge characteristics, and improves dark room contrast includes: sustain electrodes and scan electrodes that comprise transparent electrodes that are disposed having a discharge gap therebetween and bus electrodes formed on the transparent electrodes such that the discharge gap is formed to be nearer one side of a discharge cell and the bus electrode of the scan electrode is disposed near the discharge gap.