Abstract: A plasma display panel includes electrodes repeatedly disposed on a first substrate in an order of a sustain electrode, a scan electrode, a scan electrode and a sustain electrode, first barrier ribs disposed to overlap the sustain electrodes, and second barrier ribs disposed to overlap the scan electrodes and having a lower height than the first barrier ribs, wherein a space between the first barrier ribs and the second barrier ribs forms a main discharge space, a space between adjacent first barrier ribs forms an auxiliary discharge space, and the scan electrodes are formed to protrude to the auxiliary discharge space.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: A light emitting diode package according to an aspect of the invention may include: a body receiving a light emitting diode; a lead electrically connected to the light emitting diode; and an adapter receiving a modified electrode electrically connected to the lead so that the polarity of the modified electrode is changed into the polarity of the lead, the adapter in which the body is received and fixed.

Abstract: A plasma display panel that reduces power consumption, improves visual discharge characteristics, and improves dark room contrast includes: sustain electrodes and scan electrodes that comprise transparent electrodes that are disposed having a discharge gap therebetween and bus electrodes formed on the transparent electrodes such that the discharge gap is formed to be nearer one side of a discharge cell and the bus electrode of the scan electrode is disposed near the discharge gap.

Abstract: A plasma display panel with improved power efficiency and visual characteristics and contrast. The plasma display panel includes a first substrate and a second substrate facing the first substrate. A plurality of barrier ribs are on a side of the first substrate facing the second substrate and define a plurality of discharge cells. Sustain electrodes and scan electrodes extend on a side of the second substrate facing the first substrate, and each of the sustain electrodes and the scan electrodes has a bus electrode. One of the scan electrodes forms a discharge gap with a corresponding one of the sustain electrodes, wherein one of the sustain electrodes corresponds to two adjacent rows of discharge cells among the plurality of discharge cells, and the bus electrode of the one of the scan electrodes is adjacent to the discharge gap.

Abstract: A beam formed of a plank and a method for manufacturing the same are disclosed. The beam includes a body formed by bending a work object of a plank; a connection part formed at both ends of the body to engage with other members, and a bent part formed along the body. The beam facilitates formation of a shape imparting improved rigidity to the beam.

Abstract: A plasma display panel includes a pair of substrates facing each other, barrier ribs defining discharge cells between the pair of substrates, sustain electrodes between the pair of substrates, the sustain electrodes including second bus electrodes along a first direction, the second bus electrodes being on the barrier ribs, scan electrodes between the pair of substrates, the scan electrodes including first bus electrodes along the first direction, the first bus electrodes being positioned between adjacent second bus electrodes, address electrodes between the pair of substrates, the address, scan, and sustain electrodes being configured to generate discharge in the discharge cells, and phosphors in the discharge cells, the phosphors being configured to emit light by the discharge.

Abstract: A mobile terminal including an input unit configured to receive an input to activate a voice recognition function on the mobile terminal and a memory configured to store multiple domains related to menus and operations of the mobile terminal. It further includes a controller configured to access a specific domain among the multiple domains included in the memory based on the received input to activate the voice recognition function, to recognize user speech based on a language model and an acoustic model of the accessed domain, and to determine at least one menu and operation of the mobile terminal based on the accessed specific domain and the recognized user speech.

Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

Abstract: A positive active material for a rechargeable lithium battery is provided. The positive active material comprises a lithiated intercalation compound and a coating layer formed on the lithiated intercalation compound. The coating layer comprises a solid-solution compound and an oxide compound having at least two coating elements, the oxide compound represented by the following Formula 1: MpM?qOr??(1) wherein M and M? are not the same and are each independently at least one element selected from the group consisting of Zr, Al, Na, K, Mg, Ca, Sr, Ni, Co, Ti, Sn, Mn, Cr, Fe, and V; 0<p<1; 0<q<1; and 1<r?2, where r is determined based upon p and q. The solid-solution compound is prepared by reacting the lithiated intercalation compound with the oxide compound. The coating layer has a fracture toughness of at least 3.5 MPam1/2. A method of making the positive active material is also provided.

Abstract: Apparatus for detecting a defect in the outer peripheral edge of a wafer includes a rotary mechanism by which the wafer can be rotated, a wafer edge contact device, and a controller. The wafer edge contact device includes a string that is pressed against the edge of the wafer. One end of the string is fixed in place, and a sensor is operatively associated with the other end of the string so as to sense movement of the other end of the string. This other end of the string will be pulled by a defect at the outer peripheral edge of the wafer when the wafer is rotated. Thus, a defective edge of the wafer can be detected before/after the wafer is processed. Accordingly, the wafer can be prevented from being further damaged, wafer particles are prevented from polluting the fabricating equipment, and the operating efficiency and productivity of the fabricating equipment are enhanced.

Abstract: Apparatus for detecting a defect in the outer peripheral edge of a wafer includes a rotary mechanism by which the wafer can be rotated, a wafer edge contact device, and a controller. The wafer edge contact device includes a string that is pressed against the edge of the wafer. One end of the string is fixed in place, and a sensor is operatively associated with the other end of the string so as to sense movement of the other end of the string. This other end of the string will be pulled by a defect at the outer peripheral edge of the wafer when the wafer is rotated. Thus, a defective edge of the wafer can be detected before/after the wafer is processed. Accordingly, the wafer can be prevented from being further damaged, wafer particles are prevented from polluting the fabricating equipment, and the operating efficiency and productivity of the fabricating equipment are enhanced.

Abstract: Disclosed herein is a chip on board lead package for optical mice and lens cover for the same. A semiconductor chip on board package for optical mice has a board, a semiconductor chip, at least one circuit pattern, at least one bonding wire, and a lens cover. The board has top and bottom surfaces, and a pair of via holes. The semiconductor chip is attached to a center portion on the top surface of the board and provided with a plurality of electrode terminals. The circuit pattern is formed on the top surface of the board. The bonding wire electrically connects the electrode terminals of the semiconductor chip with the circuit pattern. The lens cover encloses the top surface of the board and has a lens disposed on the same axis as that of the semiconductor chip, a plurality of electrode pins formed at positions of the lens cover corresponding to the positions of the via holes in the board to be integrated with the lens cover, and an opening formed in a center portion within the lens cover.

Abstract: Disclosed herein is a chip on board lead package for optical mice and lens cover for the same. A semiconductor chip on board package for optical mice has a board, a semiconductor chip, at least one circuit pattern, at least one bonding wire, and a lens cover. The board has top and bottom surfaces, and a pair of via holes. The semiconductor chip is attached to a center portion on the top surface of the board and provided with a plurality of electrode terminals. The circuit pattern is formed on the top surface of the board. The bonding wire electrically connects the electrode terminals of the semiconductor chip with the circuit pattern. The lens cover encloses the top surface of the board and has a lens disposed on the same axis as that of the semiconductor chip, a plurality of electrode pins formed at positions of the lens cover corresponding to the positions of the via holes in the board to be integrated with the lens cover, and an opening formed in a center portion within the lens cover.

Abstract: A positive active material for a rechargeable lithium battery is provided. The positive active material comprises a lithiated intercalation compound and a coating layer formed on the lithiated intercalation compound.

Abstract: The present invention provides novel fluorinated abscisic acid derivative represented by formula of: ##STR1## wherein: X is O(CH.sub.2).sub.2 O or O; and,R is hydroxymethyl, aldehyde, C.sub.1-2 alkoxycarbonyl or carboxyl group.The present invention also provides a novel process for preparing the fluorinated abscisic acid derivative represented as the formula (I), and also provides their use for plant growth regulator.

Abstract: A novel thiophenesulfonylurea derivative having herbicidal activity, having the formula (I): ##STR1## wherein the substituents are herein described.