Patents by Inventor Tae Kyung Ahn

Tae Kyung Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090236983
    Abstract: A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer.
    Type: Application
    Filed: April 29, 2009
    Publication date: September 24, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun Joo JANG, Shin Ae JUN, Sung Hun LEE, Jong Jin PARK, Seong Jae CHOI, Tae Kyung AHN
  • Patent number: 7569248
    Abstract: A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: August 4, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Joo Jang, Shin Ae Jun, Sung Hun Lee, Jong Jin Park, Seong Jae Choi, Tae Kyung Ahn
  • Publication number: 20090020753
    Abstract: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.
    Type: Application
    Filed: July 15, 2008
    Publication date: January 22, 2009
    Inventors: Jong-han Jeong, Jae-kyeong Jeong, Jin-seong Park, Yeon-gon Mo, Hui-won Yang, Min-kyu Kim, Tae-kyung Ahn, Hyun-soo Shin, Hun jung Lee
  • Patent number: 7476487
    Abstract: Semiconductor nanocrystals surface-coordinated with a compound containing a photosensitive functional group, a photosensitive composition comprising semiconductor nanocrystals, and a method for forming semiconductor nanocrystal pattern by producing a film using the photosensitive semiconductor nanocrystals or the photosensitive composition, exposing the film to light and developing the exposed film, are provided. The semiconductor nanocrystal pattern exhibits luminescence characteristics comparable to the semiconductor nanocrystals before patterning and can be usefully applied to organic-inorganic hybrid electroluminescent devices.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: January 13, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Jin Park, Eun Joo Jang, Shin Ae Jun, Tae Kyung Ahn, Sung Hun Lee
  • Patent number: 7468168
    Abstract: A method for preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths. The method comprises the steps of (a) mixing a cadmium precursor and a dispersant in a solvent that weakly coordinates to the cadmium precursor, and heating the mixture to obtain a cadmium precursor solution, (b) dissolving a sulfur precursor in a solvent that weakly coordinates to the sulfur precursor to obtain a sulfur precursor solution, and (c) feeding the sulfur precursor solution to the heated cadmium precursor solution maintained at a high temperature to prepare cadmium sulfide crystals, and growing the cadmium sulfide crystals. Further, cadmium sulfide nanocrystals prepared by the method. The cadmium sulfide nanocrystals have uniform size and shape and can emit light close to white light simultaneously at different wavelengths upon excitation. Due to these characteristics, the cadmium sulfide nanocrystals can be applied to white light-emitting diode devices.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: December 23, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Joo Jang, Shin Ae Jun, Tae Kyung Ahn, Sung Hun Lee, Seong Jae Choi
  • Publication number: 20080311029
    Abstract: A cadmium sulfide nanocrystal, wherein the cadmium sulfide nanocrystal shows maximum luminescence peaks at two or more wavelengths and most of the atoms constituting the nanocrystal are present at the surface of the nanocrystal to form defects.
    Type: Application
    Filed: July 22, 2008
    Publication date: December 18, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun Joo Jang, Shin Ae Jun, Tae Kyung Ahn, Sung Hun Lee, Seong Jae Choi
  • Publication number: 20080308231
    Abstract: A flexible substrate bonding and debonding apparatus is disclosed. In one embodiment, the apparatus includes i) a chamber, ii) a lower chuck disposed in a lower portion of the chamber and having a lower heating unit and a cooling conduit built therein, iii) an upper chuck disposed above the lower chuck and having an upper heating unit built therein, iv) a pressurizing unit disposed above the upper chuck and v) a separating unit corresponding to either side of bonding surfaces of a support substrate and a flexible substrate which are disposed between the lower chuck and the upper chuck. The flexible substrate bonding and debonding apparatus can pressurize the flexible substrate and the support substrate simultaneously using a heat-treatment process. Therefore, the flexible substrate can be more reliably bonded and debonded even at low temperature.
    Type: Application
    Filed: June 12, 2008
    Publication date: December 18, 2008
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Jae-Seob LEE, Jin-Ho KWACK, Tae-Kyung AHN
  • Publication number: 20080290797
    Abstract: An organic-inorganic hybrid electroluminescent device having a semiconductor nanocrystal pattern prepared by producing a semiconductor nanocrystal film using semiconductor nanocrystals, where the nanocrystal is surface-coordinated with a compound containing a photosensitive functional group, exposing the film through a mask and developing the exposed film
    Type: Application
    Filed: July 17, 2008
    Publication date: November 27, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong Jin Park, Eun Joo Jang, Shin Ae Jun, Tae Kyung Ahn, Sung Hun Lee
  • Publication number: 20070275497
    Abstract: A method of aligning a substrate includes forming a first alignment hole in the substrate, preparing a mask with a second alignment hole narrower than the first alignment hole, modifying a surface reflectance around either the first alignment hole or the second alignment hole to form a treatment region, positioning the mask below the substrate, such that the first and second alignment holes overlap, and operating a sensor unit above the first alignment hole to examine alignment of the first and second alignment holes.
    Type: Application
    Filed: May 22, 2007
    Publication date: November 29, 2007
    Inventors: Jin-Ho Kwack, Tae-Kyung Ahn, Min-Kyu Kim, Se-Yeoul Kwon
  • Publication number: 20070273275
    Abstract: Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.
    Type: Application
    Filed: June 26, 2007
    Publication date: November 29, 2007
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun-joo Jang, Tae-kyung Ahn
  • Patent number: 7250082
    Abstract: Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.
    Type: Grant
    Filed: July 7, 2004
    Date of Patent: July 31, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-joo Jang, Tae-kyung Ahn
  • Patent number: 7199393
    Abstract: Semiconductor nanocrystals surface-coordinated with a compound containing a photosensitive functional group, a photosensitive composition comprising semiconductor nanocrystals, and a method for forming semiconductor nanocrystal pattern by producing a film using the photosensitive semiconductor nanocrystals or the photosensitive composition, exposing the film to light and developing the exposed film, are provided. The semiconductor nanocrystal pattern exhibits luminescence characteristics comparable to the semiconductor nanocrystals before patterning and can be usefully applied to organic-inorganic hybrid electroluminescent devices.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: April 3, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Jin Park, Eun Joo Jang, Shin Ae Jun, Tae Kyung Ahn, Sung Hun Lee
  • Patent number: 6869864
    Abstract: A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable of interacting with a quantum dot and at least one reactive group for a sol-gel process into the surface of the quantum dot or a matrix material for dispersing the quantum dot, thereby exhibiting excellent mechanical and thermal stability.
    Type: Grant
    Filed: December 15, 2003
    Date of Patent: March 22, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Heong Yim, Eun Joo Jang, Tae Kyung Ahn
  • Publication number: 20050012182
    Abstract: Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.
    Type: Application
    Filed: July 7, 2004
    Publication date: January 20, 2005
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun-joo Jang, Tae-kyung Ahn
  • Publication number: 20040266148
    Abstract: A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable of interacting with a quantum dot and at least one reactive group for a sol-gel process into the surface of the quantum dot or a matrix material for dispersing the quantum dot, thereby exhibiting excellent mechanical and thermal stability.
    Type: Application
    Filed: December 15, 2003
    Publication date: December 30, 2004
    Inventors: Jin Heong Yim, Eun Joo Jang, Tae Kyung Ahn