Abstract: A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a cell including a transistor and a magnetic tunneling junction (MTJ) layer connected to the transistor, wherein the MTJ layer includes a lower electrode, a lower magnetic film, a tunneling film having a uniform thickness and a substantially flat upper surface, and an upper magnetic film, wherein the lower electrode includes a first lower electrode and an amorphous second lower electrode. An amorphous flattening film may be further formed between the lower electrode and the lower magnetic film.

Abstract: The present invention relates to methods of treating Alzheimer's Disease which utilize agents that increase neuronal phosphotidylinositol 4,5-biphosphate (PIP2), and to differentiated stem cell-based assay systems that may be used to identify agents that modulate phosphoinositide levels and thereby treat a variety of diseases. It is based, at least in part, on the discovery that edelfosine, an agent that increases PIP2 levels by inhibiting an enzyme that catalyzes PIP2 breakdown, decreases levels of neurotoxic A&bgr;42 peptide, particularly in cells expressing a mutant presenilin gene associated with Familial Alzheimer's Disease.

Abstract: MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described.

Abstract: Negative active materials for rechargeable lithium batteries, manufacturing methods thereof, and rechargeable lithium batteries including the negative active materials are provided. The negative active material includes a compound represented by the Formula Li1+xV1-x-yMyO2+z. In one embodiment, the compound has an average particle size ranging from about 50 nm to about 30 ?m. In another embodiment, the negative active material has a ratio of (003) plane diffraction intensity to (104) plane diffraction intensity ranging from about 1:1 to about 1:0.01 when measured using a Cu K ? X-ray. According to another embodiment, after five charge/discharge cycles performed at 0.5C, a specific surface area of the negative active material increases to less than about 20 times a specific surface area before the five charge/discharge cycles. The negative active materials may improve battery capacity, and cycle-life characteristics.

Abstract: A method and a system for controlling a network traffic of P2P and instant messenger softwares are disclosed. In accordance with the method and the system, both a header and a payload of a packet generated by an instant messenger software or a P2P software are monitored to terminate a session by transmitting a termination signal to a receiver and a transmitter when required, thereby blocking the exchange of the attached file and storing the content of the conversation.

Abstract: This invention provides a method for determining whether an agent causes an increase in the expression of a retromer complex protein. This invention further provides a method for determining whether an agent causes an increase in the activity of a retromer complex. This invention also provides a method for increasing the expression of a retromer complex protein in a cell. This invention provides a method for treating a subject afflicted with Alzheimer's disease. This invention further provides a pharmaceutical composition as well as an article of manufacture.

Abstract: Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders have non-magnetic property and a HCP crystal structure. The method include (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration phenomenon. Therefore, the pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present invention, can keep the well-dispersed state. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.

Abstract: A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.

Abstract: A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.

Abstract: The present invention relates to a plasma generating device, a method of cleaning a panel, and a method of manufacturing a display panel using the same. In the present invention, a pair of dielectric plates 52 and 52? are detachably installed to a nozzle head 50. To this end, an upper end of the dielectric plate 52 or 52? is inserted into a seating slit 49 formed in a lower portion of a chamber housing 46, and a lower end of the dielectric plate 52 or 52? is securely placed on and fixed to a stepped portion 59 formed in a lower end of an electrode cover 58. Further, in order to maintain a gap 53h between the dielectric plates 52 and 52?, spacers 64 are inserted in both ends of the gap 53h. According to the present invention so configured, uniform plasma can be generated since the gap between the dielectric plates can be kept constant. Further, the dielectric plates can be easily exchanged and maintained.

Abstract: MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.

Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.

Abstract: Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.

Abstract: A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.

Abstract: A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.

Abstract: A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction (MTJ) element connected to the transistor, the MTJ element including an MTJ cell and first and second pad layers forming a magnetic field at first and second ends of the MTJ cell, the transistor including a drain connected to the first pad layer in the given unit cell region and a bit line, a source connected to the second pad layer in an adjacent unit cell region, and a gate connected to a word line corresponding to the given unit cell region.