Abstract: A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores.

Abstract: A display device includes: a first substrate and a second substrate, a plurality of first electrodes, a light emitting layer, and a plurality of second electrodes. The first and second substrates are spaced apart to face each other, and the plurality of first electrodes are formed on an inner surface of the first substrate. The light emitting layer is arranged on the plurality of first electrodes and includes phosphor bodies and light emitting sources mixed therein. The plurality of second electrodes are arranged on an inner surface of the second substrate.

Abstract: A carbon nanotube structure and a method of shaping the carbon nanotube structure are provided. The carbon nanotube structure includes a substrate, carbon nanotubes formed on the substrate and shaped in a predetermined shape, and a metal layer formed on the surfaces of the carbon nanotubes to maintain the carbon nanotubes in the predetermined shape. The carbon nanotube structure has high purity and improved conductivity.

Abstract: A field emission device has an improved structure in which electron emission from a cathode is enhanced through external light radiation. The field emission device includes: a light transmitting substrate; a cathode unit arranged on the light transmitting substrate and adapted to emit electrons, the cathode unit including: a first electrode layer of a transparent conductive material arranged on the substrate; a first electron emission layer of a semiconductive polymer organic material arranged on the first electrode layer; a second electron emission layer of a composite of a carbon-based inorganic material and a semiconductive polymer organic material arranged on the first electron emission layer; and a second electrode layer of a conductive material arranged on the second electron emission layer. The field emission device further includes an anode arranged to face the cathode unit.

Abstract: A backlight unit having a surface luminescence structure includes: a first substrate; a first electrode arranged on a lower surface of the first substrate; a first mixed layer arranged on a lower surface of the first electrode, and including emitters and phosphors; a second substrate arranged to face the first substrate; a second electrode arranged on an upper surface of the second substrate; and a second mixed layer arranged on an upper surface of the second electrode, and including emitters and phosphors. The backlight unit can be easily manufactured at a low cost, and the light emission efficiency and brightness characteristics of the backlight unit are maximized.

Abstract: A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.

Abstract: A carbon nanotube emitter and a method of manufacturing a carbon nanotube field emission device using the carbon nanotube emitter. Powdered carbon nanotubes are adsorbed onto a first substrate. A metal is deposited on the carbon nanotubes. The resultant structure is pressure-bonded to a surface of a cathode. The first substrate is spaced apart from a second substrate to tense the carbon nanotubes, so that the carbon nanotubes are perpendicular to the first substrate.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: A method of forming emitters and a method of manufacturing a Field Emission Device (FED) using the method includes: forming a volume-changeable structure on an electrode, the volume-changeable structure composed of a polymer which reversibly swells and shrinks in response to an external stimulus; injecting an electron-emitting material into the volume-changeable structure; aligning the electron-emitting material; and removing the polymer to form the emitters.

Abstract: A method of fabricating spacers for use in a flat panel device includes: preparing a core glass having a low solubility in a chemical etching solution and a tube glass having a high solubility in the chemical etching solution and having a larger inner diameter than an outer diameter of the core glass; inserting the core glass into the tube glass to obtain a cylindrical glass; drawing the cylindrical glass at a predetermined temperature until the core glass has a predetermined diameter; cutting the drawn cylindrical glass to a predetermined length; and removing the tube glass in the cylindrical glass using the chemical etching solution.

Abstract: A field emission device and a field emission display using the same. The field emission device includes a concave cathode electrode and an emitter formed at a center thereof. A gate electrode and a focusing gate electrode above the gate electrode serve to focus and refocus the electron beam emanating from the emitter to produce a better focused electron beam leading to improved color purity.

Abstract: A method of manufacturing a phosphor layer structure including an improved process of forming a phosphor layer between barriers on an anode substrate includes: forming a substrate to have inner spaces divided by barriers; forming a sacrificial layer on the barriers and the inner spaces to planarize an upper surface of the substrate; forming a phosphor layer on the sacrificial layer; and removing the sacrificial layer, the phosphor layer remaining in the inner spaces previously occupied by the sacrificial layer.

Abstract: An emitter for a field emission device (FED) designed to increase durability by interposing an ultraviolet (UV) transmissive resistive layer between a substrate and an emitter and a method for fabricating the same. The method includes depositing a transparent electrode on a transparent substrate, forming a resistive layer by stacking an ultraviolet (UV) transmissive resistive material on the transparent electrode, forming an emitter layer by stacking a carbon nanotube (CNT) on the UV transmissive resistive material, and patterning the emitter layer according to a predetermined emitter pattern.

Abstract: A Field Emission Device (FED) includes an emitter formed on a cathode electrode and including Carbon NanoTubes (CNTs), and a gate electrode to extract electrons from the emitter. In addition, a RuOx layer or a PdOx layer is coated on the emitter to protect the CNTs and to stabilize the emission from the CNTs. A stabilizer layer to stabilize an emission structure and to protect emission ends is coated on the surface of a CNT emitter or the surfaces of the CNTs, more specifically, the emission ends of the CNTs, in order to prevent abrasion of the CNTs caused by an excess current or an emission process.

Abstract: A method of manufacturing a nano-wire using a crystal structure, A crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: In a method of manufacturing a field emitter, a patterned conductive layer is formed on a substrate, an upper surface of the conductive layer is coated with a mixture of a field emission material and metal powder, the mixture is thermally treated to improve adhesion of the mixture to the conductive layer, and a field emission material and a metal deposited on a portion of the substrate other than the conductive layer are removed. Accordingly, the lifespan and field emission characteristic of the field emitter are greatly improved, and a large area field emitter having excellent characteristics that cannot be realized in the conventional art is fabricated.

Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.