Abstract: A flexible display and method of manufacturing the same are disclosed. In one aspect, the display includes a flexible substrate having a bending area and a non-bending area and a plurality of metal wirings formed over the flexible substrate in the bending area and the non-bending area. Each of the metal wirings which are formed in the bending area includes a pair of first hard wirings formed over the flexible substrate and a first soft wiring electrically connected to ends of the pair of first hard wirings.

Abstract: A flexible display device including a flexible display panel which displays an image, a strain gauge disposed in the flexible display panel, where the strain gauge senses a strain in the flexible display panel and generates a detection signal based on the sensed strain, a strain controller which receives the detection signal and outputs a strain compensation voltage based on the detection signal, and a strain compensation layer disposed on a surface of the flexible display panel and which receives the strain compensation voltage, where a thickness of the strain compensation layer may be controlled based on the strain compensation voltage such that a neutral plane of the flexible display device is maintained in a predetermined reference area in the flexible display panel.

Abstract: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

Abstract: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

Abstract: In the case of the heating device and a packing band manufacturing apparatus including the same, since it is possible to heat, cool, and heat a band stock without cooling the inside of the housing in one heating device, it is unnecessary to provide a plurality of heating devices to reheat the band stock and it is possible to omit a pressing device for catching the band stock in order not to allow the band stock between the heating devices to droop, thereby simplifying equipment.

Abstract: Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.

Abstract: A display device includes a first display, an accommodation unit on a side of the first display, and a second display. The second display is rollably accommodated in the accommodation unit in a rolled state.

Abstract: There is provided a light emitting device including a plurality of nanoscale light emitting structures spaced apart from one another on a first conductivity-type semiconductor base layer, the plurality of nanoscale light emitting structures each including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and an electrode connected to the second conductivity-type semiconductor layer. The electrode is disposed between a first nanoscale light emitting structure and a second nanoscale light emitting structure among the plurality of nanoscale light emitting structures, and the electrode has a height lower than a height of the plurality of nanoscale light emitting structures.

Abstract: A flexible display device including a flexible display panel which displays an image, a strain gauge disposed in the flexible display panel, where the strain gauge senses a strain in the flexible display panel and generates a detection signal based on the sensed strain, a strain controller which receives the detection signal and outputs a strain compensation voltage based on the detection signal, and a strain compensation layer disposed on a surface of the flexible display panel and which receives the strain compensation voltage, where a thickness of the strain compensation layer may be controlled based on the strain compensation voltage such that a neutral plane of the flexible display device is maintained in a predetermined reference area in the flexible display panel.

Abstract: An organic light emitting display device includes: a curved organic light emitting display panel. The organic light emitting display panel includes a flexible substrate, a thin film transistor layer including a semiconductor layer, and an organic light emission layer including an organic light emitting material. In the curved organic light emitting display panel, the thin film transistor layer receives a compressive stress, or a neutral plane in which the compressive stress and a tensile stress maintain equilibrium is defined in the thin film transistor layer.

Abstract: An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first thin film transistor connected to the OLED and including a first channel area extending in a second direction crossing the first direction, and one or more additional thin film transistors connected to the first thin film transistor and including corresponding additional channel areas extending in the second direction.

Abstract: A method of manufacturing a display panel is provided. A release layer is formed on a support substrate. A thin film substrate is formed on the release layer and the support substrate. A pixel and an encapsulation member are formed on a part of the thin film substrate. The part of the thin film substrate is overlapped with the release layer. The part of the thin film substrate is separated from the support substrate. The release layer includes siloxane and polyimide silane.

Abstract: A method of manufacturing silver nanowires includes: forming a first solution including a dispersion stabilizer and a polyol; forming a second solution including a dispersion stabilizer, a silver precursor, a halogen-ion donor, deionized water, and the polyol; forming a third solution by adding the second solution to the first solution; heating the third solution from a first temperature to a second temperature; and forming silver nanowires by maintaining the third solution at the second temperature.

Abstract: A display device is disclosed. In one aspect, the display device includes a flexible substrate capable of being bent in a first direction and an insulating layer including a first opening pattern positioned on the flexible substrate and extending in a second direction crossing the first direction.

Abstract: Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

Abstract: A method of manufacturing a semiconductor device, the method includes: providing a gate electrode on a substrate; providing a first interlayer insulating layer to cover the gate electrode on the substrate; providing an oxide semiconductor layer corresponding to the gate electrode on the first interlayer insulating layer; providing a source electrode and a drain electrode, which are in contact with the oxide semiconductor layer, on the first interlayer insulating layer; and heat-treating the oxide semiconductor layer using Joule heat generated therein from a flow of a drain current by applying a voltage to the source electrode or the drain electrode.

Abstract: A method of fabricating a metal nanowire dispersion solution includes heating a first solution including a metal compound, a catalyst, an organic protection agent and menstruum, thereby forming metal nanowires in the first solution, performing a first cleaning process providing a first solvent into the metal nanowire, thereby separating the organic protection agent surrounding the metal nanowires from the metal nanowires, separating the metal nanowires from the first solution by vacuum-filtering, and dispersing the separated metal nanowires in a dispersion solvent.

Abstract: A substrate evaluation apparatus and method which includes a substrate storage portion accommodating a substrate, first and second fastening portions are arranged in the substrate storage portion and are each fastened to a side of the substrate, a driving portion driving the first and second fastening portions, and a measurement portion measuring electrical characteristics of the substrate through application of an electrical signal to the substrate.

Abstract: Provided are a bending apparatus and a bending method. According to an aspect of the present invention, there is provided a bending apparatus including a guide portion configured to guide a movement and a bending of a flexible substrate so that the flexible substrate is bent and moved, a first fastening portion configured to fix one side of the flexible substrate that is bent along the guide portion, a second fastening portion configured to fix an other side of the flexible substrate, and a driving portion configured to move at least one of the first fastening portion and the second fastening portion.

Abstract: A method of manufacturing a flexible display apparatus, and more particularly, to a flexible display apparatus including a display unit including a thin-film transistor which is easily encapsulated. The method of manufacturing a flexible display apparatus includes: sequentially forming a first plastic film and a first barrier layer on a first substrate; forming a thin-film transistor on the first barrier layer; forming on the thin-film transistor a display device that is electrically connected to the thin-film transistor; forming an encapsulation member including a second substrate, a second plastic film, and a second barrier layer, wherein the second substrate and the second film are sequentially stacked on the second barrier layer; combining the encapsulation member with the upper portion of the display device; ablating the first substrate from the first plastic film; and ablating the second substrate from the second plastic film.