Abstract: There is provided a light emitting device including a plurality of nanoscale light emitting structures spaced apart from one another on a first conductivity-type semiconductor base layer, the plurality of nanoscale light emitting structures each including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and an electrode connected to the second conductivity-type semiconductor layer. The electrode is disposed between a first nanoscale light emitting structure and a second nanoscale light emitting structure among the plurality of nanoscale light emitting structures, and the electrode has a height lower than a height of the plurality of nanoscale light emitting structures.

Abstract: A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.

Abstract: An anti-scratch film, including a film base and an anti-scratch layer on one side of the film base. The anti-scratch layer includes a plurality of protrusions.

Abstract: Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.

Abstract: A flexible display comprises a flexible substrate made of plastic material, a display element on a first surface of the flexible substrate, and a surface residual film containing at least one of a metal material or a metal oxide material. The surface residual film is bonded to at least a part of a second surface of the flexible substrate. The second surface is opposed to the first surface. A method for manufacturing a flexible display comprises preparing a glass substrate, forming adhesive material film on the glass substrate, the adhesive material film being made of at least one of a metal material or a metal oxide material, and forming a flexible substrate from plastic material on the adhesive material film.

Abstract: The present invention relates to a rhythm game, and more particularly, to a method for providing a rhythm game comprising attack and defense mechanisms, and to a terminal and recording medium therefor.

Abstract: An organic light emitting display device and a method of manufacturing the same are proposed. The organic light emitting display device includes: a first film formed of an organic material, and having first and second surfaces facing each other and a third surface perpendicular to the first and second surfaces; a second film formed on the first film to cover the second and third surfaces of the first film; an organic light emitting unit disposed on the second film; a third film disposed on the second film to cover the organic light emitting unit; and a fourth film disposed on the third film, formed of an organic material, and having fourth and fifth surfaces facing each other, wherein the fifth surface faces the third film.

Abstract: Provided is an organic light emitting display apparatus including a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate electrode, a gate insulator, a source electrode and a drain electrode, a first electrode electrically connected to the source electrode or the drain electrode, a second electrode disposed to face the first electrode, and an intermediate layer including an organic emitting layer and disposed between the first electrode and the second electrode. The gate insulator is disposed to insulate the gate electrode and the active layer and includes a plurality of patterns spaced apart from each other.

Abstract: A method of manufacturing an electronic apparatus including a plastic substrate, which can facilitate in separating the electronic apparatus including the plastic substrate from a stage, an electronic apparatus manufactured using the method, and an apparatus including the stage for use in the method. The method includes: preparing a stage on which a plurality of island-shaped separation lubricators are arranged; disposing the plastic substrate on the stage; forming a device on the plastic substrate; and separating the plastic substrate from the stage.

Abstract: An organic light emitting diode display device includes a substrate body that is divided into a display area and a neighboring area; an organic light emitting diode formed in the display area of the substrate body; a barrier film that is attached to the substrate body and covers the organic light emitting diode; and an adhesive agent disposed between the neighboring area of the substrate body and the barrier film. In addition, a groove pattern is recessed on one surface of the barrier film that is in contact with the adhesive agent.

Abstract: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes a first film formed of an inorganic material, a second film that is formed of an organic material and formed on the first film, and includes a first surface and a second surface facing each other and lateral surfaces at boundaries of the first surface and the second surface, with the first surface contacting the first film, a third film that is formed of an inorganic material and covers the second surface and lateral surfaces of the second film, with a first sealing region contacting the first film being formed at a boundary between the second film and the third film, an organic light-emitting unit that is disposed on the third film to overlap with the second film, and a fourth film that covers the organic light-emitting unit, with a second sealing region contacting the third film being formed at a boundary of the fourth film.

Abstract: The present invention relates to a cutting tip for a cutting tool, which is used in cutting or drilling a brittle workpiece such as stone, bricks, concrete, and asphalt and has an excellent cutting speed and a long lifetime, a method of manufacturing the cutting tip, and a cutting tool including the cutting tip. The cutting tip includes an abrasive material and a sintered bonding material, wherein the bonding material is formed of a metal matrix; the metal matrix includes a phase II and/or pore having a certain size at a certain volume fraction; and the phase II is one of a non-metallic inclusion and ceramic. According to an aspect of the present invention, there is provided a cutting tip having excellent cutting speed and a long lifetime at a much lower price.

Abstract: An organic light emitting diode (OLED) display and a method of manufacturing the same, the OLED display including a flexible substrate, a driving circuit unit on the flexible substrate, the driving circuit unit including a thin film transistor (TFT), an organic light emission element on the flexible substrate, the organic light emission element being connected to the driving circuit unit, an encapsulating thin film on the flexible substrate, the encapsulating thin film covering the organic light emission element and the driving circuit unit, a first protection film facing the encapsulating thin film, a second protection film facing the flexible substrate, a first sealant disposed between the encapsulating thin film and the first protection film, and a second sealant disposed between the flexible substrate and the second protection film.

Abstract: A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, ? f + 0.162 × ( 1 - v f ) E f ? ? s ? ? f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, ?f representing a coefficient of thermal expansion of the buffer layer, and ?s representing the predetermined coefficient of thermal expansion of the metal substrate.

Abstract: A channel-switching apparatus and method in a digital broadcasting system omits conditional access control in logical channel-switching in one physical channel from processes that are executed for channel-switching in a digital broadcasting system, thereby reducing channel-switching time.

Abstract: A file processing system includes a system targeting unit to target a distributed file system, a chunk generator to generate a chunk including file blocks and to generate copies of the chunk to be stored in the distributed file system, a data storage medium to store the chunk, and a chunk operation requesting unit to request storage of the generated chunk copies in the distributed file system. A distributed file system includes a first data server and a second data server. Each data server includes a chunk storage unit to store a chunk copy received from a file processing system, and a chunk operation performing unit to generate an identical copy of the stored chunk copy that is undamaged to replace a damaged chunk copy.

Abstract: A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, ? f + 0.162 × ( 1 - v f ) E f ? ? s ? ? f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, ?f representing a coefficient of thermal expansion of the buffer layer, and ?s representing the predetermined coefficient of thermal expansion of the metal substrate.

Abstract: Provided are a flat panel display device having a sealing structure with improved flexibility and a method of manufacturing the flat panel display device. The method includes preparing a first substrate comprising a first polyimide layer, a first barrier layer, and a display unit are sequentially stacked on a first glass substrate; preparing a second substrate comprising a second polyimide layer and a second barrier layer are stacked on a second glass substrate; adhering the first substrate and the second substrate to each other, such that the first barrier layer faces the second barrier layer; and separating the first glass substrate and second glass substrate from the first polyimide layer and second polyimide layer, respectively, by irradiating light thereto.

Abstract: A thin film transistor includes a polymer substrate having a weight loss of 0.95% or less at a temperature in the range of 400 to 600° C. A method of producing the thin film transistor includes forming a polymer substrate by forming a polymer layer and annealing the polymer layer at a temperature in the range of 150 to 550° C. A flexible display device includes the thin film transistor.

Abstract: A pixel circuit for a display apparatus is disclosed. The pixel circuit includes two scan transistors. The scan transistors are driven such that when not connecting a storage capacitor to a data line, one of the scan transistors is off, and one of the scan transistors is driven with a voltage to reverse a threshold shift caused by the voltage applied to turn the transistor off.