Publication number: 20050167681
Abstract: Provided are an electrode layer, a light emitting device including the electrode layer, and a method of forming the electrode layer. The electrode layer includes a first electrode layer and a second electrode layer, which are sequentially stacked, and the first electrode layer is formed of indium oxide added by an additive element. Also, the additive element includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.
Type:
Application
Filed:
November 2, 2004
Publication date:
August 4, 2005
Applicants:
Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
Inventors:
Joon-seop Kwak, Ok-hyun Nam, Tae-yeon Seong, June-o Song
Publication number: 20050087758
Abstract: Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
Type:
Application
Filed:
September 30, 2004
Publication date:
April 28, 2005
Applicants:
Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
Inventors:
Joon-seop Kwak, Tae-yeon Seong, Ok-hyun Nam, June-o Song, Dong-seok Leem