Abstract: A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.

Abstract: Provided is a transparent thin film electrode for forming an ohmic contact to a p-type semiconductor containing nitrogen (N) and gallium (Ga) in order to realize a high quality light emitting diode (LED) and a laser diode (LD). T he transparent thin film electrode includes a copper (Cu)-based conductive layer including Cu and another metal and a metal capping layer formed on the copper-based conductive layer. Alternatively, the transparent thin film electrode may include a Cu-based conductive layer, an intermediate layer formed on the Cu-based conductive layer, and a metal capping layer formed on the intermediate layer.

Abstract: A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.

Abstract: Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor.

Abstract: A method of fabricating on ohmic metal electrode. The p-type ohmic metal electrode according to the present invention employs Ru and RuOx as the cover layer in lieu of conventional Au, in order to effectively prevent penetration by contaminants in the air, such as oxygen, carbon, and H2O, and to form a stable metal-Ga intermetallic phase at the junction between the contact layer and the nitride compound semiconductor. The n-type ohmic metal electrode according to the present invention employs Ru as the diffusion barrier in lieu of conventional Ni or Pt, in order to effectively form a metal-nitride phase such as titanium nitride that contributes to superior ohmic characteristics during the heating process, without destruction of the junction. According to the present invention, it is possible to fabricate devices having superior electrical, optical, and thermal characteristics compared with conventional devices.

Abstract: A metal thin film with an ohmic contact for light emit diodes and a method of producing such a film are disclosed. The metal thin film has a p-type gallium nitride (GaN) semiconductor layer. Nickel (Ni), platinum (Pt) and gold (Au) layers are deposited on the GaN semiconductor layer in a way such that the gold layer forms a top layer, with either one of the platinum and nickel layers being selectively used as an inter-diffusion barrier between metal layers. The inter-diffusion barrier may be formed by depositing platinum between the nickel and gold layers, thus forming an Ni/Pt/Au metal thin film, or formed by depositing nickel between the platinum and gold layers, thus forming an Pt/Ni/Au metal thin film. In the method, a GaN semiconductor is washed so as to be free from carbide and oxide layers. The Ni, Pt and Au layers are formed on the GaN semiconductor layer through a vacuum deposition process at 5×10−5-2×10−1 torr.