Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.

Abstract: In one example, an electronic device comprises a first substrate comprising a first dielectric structure and a first conductive structure, a first interconnect structure over an inward side of the first substrate and coupled with the first conductive structure, a first encapsulant over the inward side of the first substrate and contacting a lateral side of the first interconnect structure, a second substrate over the first encapsulant and comprising a second dielectric structure and a second conductive structure, wherein the second conductive structure is coupled with the first interconnect structure, and a first electronic component coupled with an outward side of the first substrate. The first electronic component is coupled with the second conductive structure via the first interconnect structure and the first conductive structure. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.

Abstract: An electronic device includes a substrate comprising outward terminals. An electronic component is connected to the outward terminals. External interconnects are connected to the outward terminals and include a first external interconnect connected to a first outward terminal. A lower shield is adjacent to the substrate bottom side and is laterally between the external interconnects. The lower shield is electrically isolated from the first external interconnect by one or more of 1) a dielectric buffer interposed between the lower shield and the first external interconnect; or 2) the lower shield including a first part and a second part, the first part being laterally separated from the second part by a first gap, wherein the first part laterally surrounds lateral sides of the first external interconnect; and the second part is vertically interposed between the first outward terminal and the first external interconnect.

Abstract: Provided are a spiral type cell culture vessel and a cell culture system using same. The present invention comprises: a housing having a certain length and having respective ends which are open; first and second caps respectively assembled to one end and the other end of the housing; and at least one spiral type culture support which is disposed in an internal space of the housing and in which a cell culture is performed. The spiral type culture support comprises at least one culture sheet of which one edge is in contact with and is fixed to a support shaft having a certain length, the culture sheet is spirally wound around the support shaft, and a culture medium passes in one direction due to a gap formed between the spirally wound culture sheet and the inner side thereof, and thus, a cell culture space is formed in which the cell culture is performed.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening.

Abstract: In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.

Abstract: In one example, a semiconductor device comprises a substrate having a top surface and a bottom surface, an electronic device on the bottom surface of the substrate, a leadframe on the bottom surface of the substrate, the leadframe comprising a paddle, wherein the paddle is coupled to the electronic device, and a lead electrically coupled to the electronic device. The semiconductor device further comprises a first protective material contacting the bottom surface of the substrate and a side surface of the electronic device.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.

Abstract: Provided are a negative electrode active material including a three-dimensional composite. The three-dimensional composite includes secondary particles containing a silicon carbide-based (SiCx, 0<x?1) nanosheet having a bent portion and amorphous carbon. Also provided are a method of producing the same, and a negative electrode and a lithium secondary battery including the negative electrode active material.

Abstract: In one example, a semiconductor device comprises a substrate having a top surface and a bottom surface, an electronic device on the bottom surface of the substrate, a leadframe on the bottom surface of the substrate, the leadframe comprising a paddle, wherein the paddle is coupled to the electronic device, and a lead electrically coupled to the electronic device. The semiconductor device further comprises a first protective material contacting the bottom surface of the substrate and a side surface of the electronic device.

Abstract: A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.

Abstract: Provided is a negative electrode active material for a lithium secondary battery according to the present invention, including a carbon-based particle including pores in an inner portion and/or a surface thereof; and a silicon-based coating layer positioned on a pore surface and/or a pore-free surface of the carbon-based particle and containing silicon carbon compound.

Abstract: In one example, an electronic device includes a substrate having a substrate top side, a substrate bottom side opposite to the substrate top side, and a substrate conductive structure. The substrate conductive structure includes a grounded path and a powered path. An electronic component is coupled to the substrate top side. An encapsulant covers the electronic component and the substrate top side. The encapsulant includes apertures and the powered path is exposed by the apertures. A first network structure includes a first network cover over the encapsulant. and first network interconnects coupled to the first network cover and the powered path through the apertures. A second network structure includes a second network cover having a second cover ceiling and second cover sidewalls extending from the second cover ceiling; and a second network contact coupled to the second network cover and the grounded path.

Abstract: Disclosed is an air cleaner having independent fluid paths and a home appliance having the air cleaner. The air cleaner includes a front panel having a plurality of air inlets formed thereon for air to flow in from outside of the case, first and second blower devices arranged inside the case to allow air to flow in through the plurality of air inlets, first and second filter units arranged to filter the air flowing in by the first and second blower devices, a first outlet located on the case to release the air, a second outlet formed at a different location from that of the first outlet, a first fluid path formed between one of the plurality of air inlets and the first outlet; and a second fluid path formed between another of the plurality of air inlets and the second outlet.