Abstract: An optical imaging system includes a first lens group and a second lens group. The first lens group includes a first lens and a second lens. The second lens group includes a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. The first to seventh lenses are sequentially disposed from an object side toward an imaging plane. The optical imaging system satisfies TTL/2Y<1.3, where TTL is a distance from an object-side surface of the first lens to the imaging plane, and 2Y is a diagonal length of the imaging plane.

Abstract: A wall mount including a guide member. The guide member includes a first guide coupling portion positioned in one end portion of the guide member, a second guide coupling portion positioned in another end portion of the guide member, the second guide coupling portion being symmetrical to the first guide coupling portion, a third guide coupling portion positioned between the first guide coupling portion and a center of the guide member, and a fourth guide coupling portion positioned between the second guide coupling portion and the center of the guide member and being symmetrical to the third guide coupling portion; a first fixing bracket coupleable to the first guide coupling portion or the third guide coupling portion; and a second fixing bracket coupleable to the second guide coupling portion or the fourth guide coupling portion.

Abstract: An optical imaging system includes a first lens group and a second lens group. The first lens group includes a first lens and a second lens. The second lens group includes a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. The first to seventh lenses are sequentially disposed from an object side toward an imaging plane. The optical imaging system satisfies TTL/2Y<1.3, where TTL is a distance from an object-side surface of the first lens to the imaging plane, and 2Y is a diagonal length of the imaging plane.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: a camera-puddle lamp integrated apparatus is disclosed. The apparatus comprising a lens module; an image sensor; and a puddle lamp module, the puddle lamp module includes a light source, a spring, a sliding bar, and a solenoid and is disposed in a second area outside the first area, the light source is formed to be movable to be located in the first area or the second area, the light source is fixed to one side of the sliding bar, a moving part of the solenoid is connected to the other side of the sliding bar, and the spring is formed to be operated to move the sliding bar when the solenoid is switched to a non-operational state so as to move the light source to the second area, the camera-puddle lamp integrated apparatus operates as a puddle lamp when the light source moves to the first area, and the camera-puddle lamp integrated apparatus operates as a camera when the light source moves to the second area.

Abstract: A system and a method of diagnosing abnormality of a main control unit, in which an auxiliary control unit for diagnosing an abnormal operation of a main control unit is additionally included in a battery management system including one or more battery management modules and the main control unit controlling the battery management module, thereby more stably driving the battery management system.

Abstract: A device for testing a semiconductor device includes a blade, a socket, and a test board. The blade includes one or more outer blade conductors disposed on one or more side surfaces of the blade. The socket includes one or more outer socket conductors disposed on one or more side surfaces of the socket. The one or more outer socket conductors are disposed at a location such that they are in contact with or are isolated from the one or more outer blade conductors depending on a position of the blade. The test board transfers a test signal to the one or more outer socket conductors.

Abstract: a camera-puddle lamp integrated apparatus is disclosed. The apparatus comprising a lens module; an image sensor; a light source; and an optical unit, wherein the image sensor is spaced apart from a rear of the lens module so that the image sensor and the lens module are formed to operate as a camera, the light source is disposed to be coplanar with the image sensor and disposed at a peripheral portion of the image sensor, the optical unit is disposed in front of the light source so that light emitted from the light source is directed to a rear end of the lens module, and the camera-puddle lamp integrated apparatus is formed to operate as a puddle lamp by the light source and the optical unit.

Abstract: A camera-puddle lamp integrated apparatus is disclosed. The apparatus comprising a lens module; an image sensor; a light source; and a translucent mirror, the light source is disposed so that light emitted from the light source intersects an optical axis of the lens module in the first area and disposed in a second area outside the first area, at least a portion of the emitted light is incident to the rear of the lens module by the translucent mirror and projected in front of the lens module through the lens module so that the camera-puddle lamp integrated apparatus operates as a puddle lamp, and image light passes through the lens module from a photographing area and at least a portion of the image light is incident on the image sensor through the translucent mirror so that the camera-puddle lamp integrated apparatus operates as a camera.

Abstract: a camera-puddle lamp integrated apparatus is disclosed. The apparatus comprising a lens module; an image sensor; and a puddle lamp module, the puddle lamp module includes a light source, a spring, a sliding bar, and a solenoid and is disposed in a second area outside the first area, the light source is formed to be movable to be located in the first area or the second area, the light source is fixed to one side of the sliding bar, a moving part of the solenoid is connected to the other side of the sliding bar, and the spring is formed to be operated to move the sliding bar when the solenoid is switched to a non-operational state so as to move the light source to the second area, the camera-puddle lamp integrated apparatus operates as a puddle lamp when the light source moves to the first area, and the camera-puddle lamp integrated apparatus operates as a camera when the light source moves to the second area.

Abstract: A camera-puddle lamp integrated apparatus is disclosed.

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.

Abstract: A vehicle camera is disclosed. A vehicle camera according to at least one embodiment includes a water-repellent coating layer configured to allow a contact angle of water droplets to be formed at at least a predetermined angle, a reflective member having a reflective surface configured to change an optical path, a lens group including at least one or more lenses that have high heat resistance and a glass transition temperature of 140° C. or higher, and an optical filter group including at least one or more optical filters, wherein the water-repellent coating layer, the reflective member, the lens group, and the optical filter group are arranged in order of appearance from an object side along an optical axis.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: An optical imaging system includes a plurality of lenses disposed along an optical axis, and a reflection member disposed to be closer to an object than all of the plurality of lenses and having a reflection surface configured to change a path of light. The plurality of lenses are spaced apart from each other by preset distances along the optical axis, and the condition 0.8<TTL/ft<1.1 is satisfied, where TTL is a distance from an object-side surface of a lens closest to the object among the plurality of lenses to an imaging plane of an image sensor, and ft is an overall focal length of an optical system including the plurality of lenses.

Abstract: An optical imaging system includes a first lens group having a first group of lenses. A foremost lens of the first group of lenses is a lens closest to an object side and has a positive refractive power. The optical imaging system also includes a second lens group having a second group of lenses. A rearmost lens of the second group of lenses is a lens closest to an imaging plane and has convex surfaces. The first and second lens groups are sequentially disposed from the object side to an imaging plane. An expression TL/f1<2.0 is satisfied, where TL represents a distance from an object-side surface of the foremost lens to the imaging plane and f1 represents a focal length of the foremost lens.

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.