Abstract: An electrostatic device according to one embodiment of the present invention comprises: an electrostatic electrode layer; a dielectric layer arranged on the electrostatic electrode layer; and a ring-shaped protrusion part arranged and formed on an edge of the dielectric layer, wherein the protrusion part forms a concave area, the concave area is filled with a cooling gas, and the protrusion part comprises a flat area and a surface treatment area to which a roughening treatment has been performed.

Abstract: A plasma substrate processing apparatus according to one embodiment of the present invention comprises: a process chamber; an upper electrode disposed in the process chamber; a substrate holder disposed under the upper electrode and facing the upper electrode to support a substrate; and an RF power source for applying RF power to the substrate holder. The upper electrode includes: an upper electrode conductive plate having lower surfaces with different heights from the substrate holder according to positions thereof; and a compensating plate coupled to a lower portion of the conductive plate, having a different thickness according to positions thereof to compensate for a height difference according to the positions of the upper electrode conductive plate, and having a dielectric constant. The lower surface of the compensating plate is coplanar.

Abstract: A substrate treatment apparatus, according to one embodiment of the present invention, comprises: a remote plasma generator for generating remote plasma and an active species; an upper chamber having an opening connected to an output port of the remote plasma generator, and receiving and diffusing the active species of the remote plasma generator; a lower chamber for receiving the active species which has been diffused in the upper chamber; a main baffle for partitioning the upper chamber and the lower chamber and permeating the active species; a substrate holder for supporting a substrate disposed in the lower chamber; a RF power source for forming main plasma by applying RF power to the substrate holder; and a DC pulse power source for applying a DC pulse to the substrate holder.

Abstract: A plasma substrate treatment apparatus according to one embodiment of the present invention comprises: a remote plasma generator for generating plasma and an active species; an upper chamber having an opening connected to an output port of the remote plasma generator and receiving and diffusing the active species of the remote plasma generator; a first baffle disposed on the opening of the upper chamber; a lower chamber receiving the diffused active species from the upper chamber; a second baffle partitioning the upper chamber and the lower chamber and transmitting the active species; a substrate holder for supporting a substrate disposed in the lower chamber; and an RF power source applying RF power to the substrate holder.

Abstract: A light-emitting device is provided. The light-emitting device includes a first electrode structure, a light-emitting layer disposed on the first electrode structure, a second electrode structure disposed on the light-emitting layer, and a plurality of nano-particles disposed within the light-emitting layer. Each of the nano-particles includes a metal core and a dielectric shell that surrounds the metal core to generate plasmon resonance.

Abstract: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.

Abstract: A light-emitting device is provided. The light-emitting device includes a first electrode structure, a light-emitting layer disposed on the first electrode structure, a second electrode structure disposed on the light-emitting layer, and a plurality of nano-particles disposed within the light-emitting layer. Each of the nano-particles includes a metal core and a dielectric shell that surrounds the metal core to generate plasmon resonance.

Abstract: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract: Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

Abstract: Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

Abstract: A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.

Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.

Abstract: A process for passivating a carbon-based hard mask, for example, of hydrogenated amorphous carbon, overlying an oxide dielectric which is to be later etched according to the pattern of the hard mask. After the hard mask is photo lithographically etched, it is exposed to a plasma of a hydrogen-containing reducing gas, preferably hydrogen gas, and a fluorocarbon gas, preferably trifluoromethane. The substrate can then be exposed to air without the moisture condensing in the etched apertures of the hard mask.

Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

Abstract: A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract: A method and apparatus is disclosed for circumferential process gas flow in an ion etch or deposition plasma reactor. The process includes a method and apparatus for creating a flow of the desired gas, circumferentially around the outer edge portion of a semiconductor wafer positioned within a plasma reactor chamber. At least a portion of the desired gas is in a plasma state.

Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.