Patents by Inventor Taeho Shin
Taeho Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240092686Abstract: Disclosed are: an enamel composition which has excellent cleaning functionality, and which, when used to form an enamel coating on a metal base material, ensures excellent thermal shock resistance and durability by suppressing the generation of defects caused by gas generation; a method for manufacturing same; and kitchenware using same. In addition, the enamel composition according to the present invention has excellent thermal shock resistance and durability due to having a component system in which glass-forming components and catalytic components are optimized.Type: ApplicationFiled: January 26, 2022Publication date: March 21, 2024Inventors: Ju Hyeong KIM, Jaekyung YANG, Taeho KIM, Taehee KIM, Jaeyoung SHIN
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Patent number: 10121983Abstract: A light-emitting device is provided. The light-emitting device includes a first electrode structure, a light-emitting layer disposed on the first electrode structure, a second electrode structure disposed on the light-emitting layer, and a plurality of nano-particles disposed within the light-emitting layer. Each of the nano-particles includes a metal core and a dielectric shell that surrounds the metal core to generate plasmon resonance.Type: GrantFiled: January 31, 2017Date of Patent: November 6, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Junhee Choi, Taeho Shin
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Patent number: 9905790Abstract: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.Type: GrantFiled: April 6, 2016Date of Patent: February 27, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Weonkyu Koh, Taeho Shin, Kyungsang Cho
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Publication number: 20170271606Abstract: A light-emitting device is provided. The light-emitting device includes a first electrode structure, a light-emitting layer disposed on the first electrode structure, a second electrode structure disposed on the light-emitting layer, and a plurality of nano-particles disposed within the light-emitting layer. Each of the nano-particles includes a metal core and a dielectric shell that surrounds the metal core to generate plasmon resonance.Type: ApplicationFiled: January 31, 2017Publication date: September 21, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Junhee CHOI, Taeho SHIN
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Publication number: 20170117496Abstract: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.Type: ApplicationFiled: April 6, 2016Publication date: April 27, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Weonkyu KOH, Taeho SHIN, Kyungsang CHO
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Patent number: 7838430Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.Type: GrantFiled: April 12, 2004Date of Patent: November 23, 2010Assignee: Applied Materials, Inc.Inventors: Steven C. Shannon, Dennis S. Grimard, Theodoros Panagopoulos, Daniel J. Hoffman, Michael G. Chafin, Troy S. Detrick, Alexander Paterson, Jingbao Liu, Taeho Shin, Bryan Y. Pu
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Patent number: 7736914Abstract: Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.Type: GrantFiled: November 29, 2007Date of Patent: June 15, 2010Assignee: Applied Materials, Inc.Inventors: Jingbao Liu, Taeho Shin, Bryan Y. Pu
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Publication number: 20090142859Abstract: Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.Type: ApplicationFiled: November 29, 2007Publication date: June 4, 2009Applicant: APPLIED MATERIALS, INC.Inventors: JINGBAO LIU, Taeho Shin, Bryan Y. Pu
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Publication number: 20080286979Abstract: A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.Type: ApplicationFiled: July 24, 2008Publication date: November 20, 2008Inventors: Taeho Shin, Jingbao Liu, Ajey M. Joshi, Jong Mun Kim, Wei-Te Wu
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Patent number: 7374636Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.Type: GrantFiled: July 26, 2002Date of Patent: May 20, 2008Assignee: Applied Materials, Inc.Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu, Qi Li, Mahmoud Dahimene
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Publication number: 20080102553Abstract: A process for passivating a carbon-based hard mask, for example, of hydrogenated amorphous carbon, overlying an oxide dielectric which is to be later etched according to the pattern of the hard mask. After the hard mask is photo lithographically etched, it is exposed to a plasma of a hydrogen-containing reducing gas, preferably hydrogen gas, and a fluorocarbon gas, preferably trifluoromethane. The substrate can then be exposed to air without the moisture condensing in the etched apertures of the hard mask.Type: ApplicationFiled: October 31, 2006Publication date: May 1, 2008Applicant: Applied Materials, Inc.Inventors: TAEHO SHIN, Ajey M. Joshi, Zhuang Li, Wei-Te Wu, Jin Chul Son, Jong Hun Choi
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Patent number: 7316199Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.Type: GrantFiled: May 14, 2002Date of Patent: January 8, 2008Assignee: Applied Materials, Inc.Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Qi Li, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu
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Publication number: 20070243714Abstract: A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.Type: ApplicationFiled: April 18, 2006Publication date: October 18, 2007Inventors: Taeho Shin, Jingbao Liu, Ajey Joshi, Jong Kim, Wei-Te Wu
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Publication number: 20070000611Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.Type: ApplicationFiled: September 11, 2006Publication date: January 4, 2007Applicant: APPLIED MATERIALS, INC.Inventors: Steven Shannon, Dennis Grimard, Theodoros Panagopoulos, Daniel Hoffman, Michael Chafin, Troy Detrick, Alexander Paterson, Jingbao Liu, Taeho Shin, Bryan Pu
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Publication number: 20050090118Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.Type: ApplicationFiled: April 12, 2004Publication date: April 28, 2005Inventors: Steven Shannon, Dennis Grimard, Theodoros Panagopoulos, Daniel Hoffman, Michael Chafin, Troy Detrick, Alexander Paterson, Jingbao Liu, Taeho Shin, Bryan Pu
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Publication number: 20030192645Abstract: A method and apparatus is disclosed for circumferential process gas flow in an ion etch or deposition plasma reactor. The process includes a method and apparatus for creating a flow of the desired gas, circumferentially around the outer edge portion of a semiconductor wafer positioned within a plasma reactor chamber. At least a portion of the desired gas is in a plasma state.Type: ApplicationFiled: April 16, 2002Publication date: October 16, 2003Applicant: Applied Materials, Inc.Inventors: Jingboa Liu, Taeho Shin
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Publication number: 20030085000Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.Type: ApplicationFiled: May 14, 2002Publication date: May 8, 2003Applicant: Applied Materials, Inc.Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Qi Li, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu
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Publication number: 20030006008Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.Type: ApplicationFiled: July 26, 2002Publication date: January 9, 2003Applicant: Applied Materials, Inc.Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu, Qi Li, Mahmoud Dahimene
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Patent number: 6372151Abstract: The method of present invention etches a layer of polysilicon formed on a substrate disposed within a substrate processing chamber. The method flows an etchant gas including sulfur hexafluoride, an oxygen source and a nitrogen source into the processing chamber and ignites a plasma from the etchant gas to etch the polysilicon formed over the substrate. In a preferred embodiment, the etchant gas consists essentially of SF6, molecular oxygen (O2) and molecular nitrogen (N2). In a more preferred embodiment the etchant gas includes a volume ratio of molecular oxygen to the sulfur hexafluoride of between 0.5:1 and 1:1 inclusive and a volume ratio of the sulfur hexafluoride to molecular nitrogen of between 1:1 and 4:1 inclusive. In an even more preferred embodiment, the volume ratio of O2 to sulfur hexafluoride is between 0.5:1 and 1:1 inclusive and the volume ratio of sulfur hexafluoride to N2 is between 1.5:1 and 2:1 inclusive.Type: GrantFiled: July 27, 1999Date of Patent: April 16, 2002Assignee: Applied Materials, Inc.Inventors: Taeho Shin, Nam-Hun Kim, Jeffrey D. Chinn
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Patent number: 6312616Abstract: A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 Å/min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF6, 1-40 sccm of CHF3, and 40-50 sccm of O2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C.Type: GrantFiled: December 3, 1998Date of Patent: November 6, 2001Assignee: Applied Materials, Inc.Inventors: Jeffrey Chinn, Taeho Shin, Nam-Hun Kim