Patents by Inventor Taeho Shin

Taeho Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030006008
    Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
    Type: Application
    Filed: July 26, 2002
    Publication date: January 9, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu, Qi Li, Mahmoud Dahimene
  • Patent number: 6372151
    Abstract: The method of present invention etches a layer of polysilicon formed on a substrate disposed within a substrate processing chamber. The method flows an etchant gas including sulfur hexafluoride, an oxygen source and a nitrogen source into the processing chamber and ignites a plasma from the etchant gas to etch the polysilicon formed over the substrate. In a preferred embodiment, the etchant gas consists essentially of SF6, molecular oxygen (O2) and molecular nitrogen (N2). In a more preferred embodiment the etchant gas includes a volume ratio of molecular oxygen to the sulfur hexafluoride of between 0.5:1 and 1:1 inclusive and a volume ratio of the sulfur hexafluoride to molecular nitrogen of between 1:1 and 4:1 inclusive. In an even more preferred embodiment, the volume ratio of O2 to sulfur hexafluoride is between 0.5:1 and 1:1 inclusive and the volume ratio of sulfur hexafluoride to N2 is between 1.5:1 and 2:1 inclusive.
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: April 16, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Taeho Shin, Nam-Hun Kim, Jeffrey D. Chinn
  • Patent number: 6312616
    Abstract: A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 Å/min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF6, 1-40 sccm of CHF3, and 40-50 sccm of O2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C.
    Type: Grant
    Filed: December 3, 1998
    Date of Patent: November 6, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey Chinn, Taeho Shin, Nam-Hun Kim