Abstract: A dial device including an upper case and a bottom base disposed with an electrode pattern having a directional pattern corresponding to a direction, wherein an interactive display device utilizes the dial device as an input device (such as a mouse or a rocker capable of instructing an index displayed by a screen to move toward the direction) according to moving signals transmitted by the dial device and sensing signals generated by a touch circuit of the interactive display device. Thus, the interactive display device is capable of mapping a direction caused by relative motions between the upper case and the bottom base to a moving direction of an object displayed by the interactive display device, so as to increase an operation of the dial device.

Abstract: An optical dial device includes a base and a drum. In the base, optical sensing elements are disposed at a predetermined height along the circumference of the side surface of the base. The drum covers the base in a manner that is movable and rotatable relative to the base. The drum includes an opening and a reflective structure disposed along the circumference of the inner wall surface of the drum and located a first distance away from the opening. There is a spiral structure disposed along the circumference of the inner wall surface of the drum and located a second distance away from the opening. The spiral structure causes the distance between the inner wall surface of the drum and the side surface of the base to vary continuously along the circumference.

Abstract: A rotary input device includes a base, a cover, a column, one or more first magnets, one or more second magnets, a plurality of magnetic sensors, and a signal processing circuit. The cover includes a cap portion and a side wall vertically extending from the cap portion. The column surrounded by the side wall includes a first end for connecting to the base and a second end for connecting to the cover. The first magnet surrounds the column and is configured on the cover. The second magnet surrounds the first magnet and is configured on the base. The magnetic sensors are configured on a lateral surface of the column and coupled to the signal processing circuit.

Abstract: A dial device includes a base, a cover, a column, a magnet, a magnetic sensor and a signal processing circuit. The cover includes a cap portion and a side wall vertically extending from the cap portion. The column surrounded by the wall includes a first end for connecting to the base and a second end for connecting to the cover. The magnet surrounds the column and is disposed on the base or the cover. The magnetic sensor is disposed on a side surface of the column and coupled to the signal processing circuit. When the cover rotates relative to the base, the magnet rotates around the magnetic sensor, and the magnetic field strengths sensed by the magnetic sensor vary. The signal processing circuit determines the relative rotation direction between the cover and the base according to the difference of the magnetic field strengths sensed by the magnetic sensor.

Abstract: An active stylus and a detection method thereof are provided. The active stylus includes a first optical distance measurement circuit, a second optical distance measurement circuit and a signal processing circuit. The first optical distance measurement circuit is arranged at/on the side of the active stylus to measure a first distance between the active stylus and a target surface. The second optical distance measurement circuit is arranged at/on the other side of the active stylus to measure a second distance between the active stylus and the target surface. By using the first distance and the second distance, the signal processing circuit calculates an inclination angle of the active stylus relative to the target surface, and/or detects the rotation direction of the active stylus with the long axis direction as the rotation axis.

Abstract: An optical dial device includes a base and a drum. In the base, optical sensing elements are disposed at a predetermined height along the circumference of the side surface of the base. The drum covers the base in a manner that is movable and rotatable relative to the base. The drum includes an opening and a reflective structure disposed along the circumference of the inner wall surface of the drum and located a first distance away from the opening. There is a spiral structure disposed along the circumference of the inner wall surface of the drum and located a second distance away from the opening. The spiral structure causes the distance between the inner wall surface of the drum and the side surface of the base to vary continuously along the circumference.

Abstract: An electronic system is provided, which includes a first device and a second device. The first device includes a light source unit, a light detection unit and a control unit. The light source unit is utilized for emitting light along a light path. The light detection unit is utilized for detecting reflected light and measuring intensity of the reflected light. The control unit is utilized for generating a control signal according to the intensity of the reflected light. The second device includes a switch body and a reflection portion. The reflection portion is disposed on the switch body. When the reflection portion is located on the light path, the reflection portion reflects at least a portion of the light to form at least a portion of the reflected light.

Abstract: An active stylus and a detection method thereof are provided. The active stylus includes a first optical distance measurement circuit, a second optical distance measurement circuit and a signal processing circuit. The first optical distance measurement circuit is arranged at/on the side of the active stylus to measure a first distance between the active stylus and a target surface. The second optical distance measurement circuit is arranged at/on the other side of the active stylus to measure a second distance between the active stylus and the target surface. By using the first distance and the second distance, the signal processing circuit calculates an inclination angle of the active stylus relative to the target surface, and/or detects the rotation direction of the active stylus with the long axis direction as the rotation axis.

Abstract: An electronic system is provided, which includes a first device and a second device. The first device includes a light source unit, a light detection unit and a control unit. The light source unit is utilized for emitting light along a light path. The light detection unit is utilized for detecting reflected light and measuring intensity of the reflected light. The control unit is utilized for generating a control signal according to the intensity of the reflected light. The second device includes a switch body and a reflection portion. The reflection portion is disposed on the switch body. When the reflection portion is located on the light path, the reflection portion reflects at least a portion of the light to form at least a portion of the reflected light.

Abstract: A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The method includes: providing a substrate with a fin structure to define a first and a second type well regions; forming a trench in the first-type well region to separate the fin structure into a first part and a second part; forming a STI structure in the trench; forming a first and a second polycrystalline silicon gate stack structures at the fin structure; forming discontinuous openings on the exposed fin structure and growing an epitaxial material layer in the openings; doping the epitaxial material layer to form a drain and a source doped layers in the first and second parts respectively; and performing a RMG process to replace the first and second polycrystalline silicon gate stack structures with a first and second metal gate stack structures respectively.

Abstract: A touch control system and a method for determining a tilt state of a stylus device are provided. The touch control system includes a stylus device and a touch panel. In one embodiment, the stylus device is configured to transmit a first wireless signal and a second wireless signal. The touch panel is configured to receive the first wireless signal and the second wireless signal and determine a tilt state of the stylus device relative to the touch panel according to a signal feature of the second wireless signal. Therefore, the determination of the tilt state of the stylus device can be improved.

Abstract: The present invention provides a method of forming a metal oxide semiconductor (MOS) device comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and a part thereof serves a source/drain of the MOS, wherein the epitaxial structure comprises: a first buffer layer with a second conductive type, a second buffer layer, and an epitaxial layer with a first conductive type complementary to the second conductive type. The present invention further provides a method of forming the same.

Abstract: A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The method includes: providing a substrate with a fin structure to define a first and a second type well regions; forming a trench in the first-type well region to separate the fin structure into a first part and a second part; forming a STI structure in the trench; forming a first and a second polycrystalline silicon gate stack structures at the fin structure; forming discontinuous openings on the exposed fin structure and growing an epitaxial material layer in the openings; doping the epitaxial material layer to form a drain and a source doped layers in the first and second parts respectively; and performing a RMG process to replace the first and second polycrystalline silicon gate stack structures with a first and second metal gate stack structures respectively.

Abstract: A touch-sensing electrode structure includes multiple first electrodes and multiple second electrodes. Each of the first electrodes includes at least a first major part and a second major part, the first major part and the second major part cross over each other to form at least one interconnect section, the interconnect section includes a first connecting line extending in a first direction and a second connecting line extending in a second direction different to the first direction. Each of the second electrodes includes a plurality of electrode sections and third connecting lines, each of the third connecting lines is connected between two adjacent electrode sections, the third connecting lines extend in a third direction different to the first direction and the second direction, and at least one of the third connecting lines overlaps the interconnect section.

Abstract: A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The high-voltage FinFET device includes: at least one fin structure, a working gate, a shallow trench isolation structure, and a first dummy gate. The fin structure includes a first-type well region and a second-type well region adjacent to the first-type well region, and further includes a first part and a second part. A trench is disposed between the first part and the second part and disposed in the first-type well region. A drain doped layer is disposed on the first part which is disposed in the first-type well region, and a source doped layer is disposed on the second part which is disposed in the second-type well region. The working gate is disposed on the fin structure which is disposed in the first-type well region and in the second-type well region.

Abstract: The present invention provides a method of forming a metal oxide semiconductor (MOS) device comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and a part thereof serves a source/drain of the MOS, wherein the epitaxial structure comprises: a first buffer layer with a second conductive type, a second buffer layer, and an epitaxial layer with a first conductive type complementary to the second conductive type. The present invention further provides a method of forming the same.

Abstract: The present invention provides a metal oxide semiconductor (MOS) device, comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and apart thereof serves a source/drain of the MOS, wherein the epitaxial structure comprises: a first buffer layer with a second conductive type, a second buffer layer, and an epitaxial layer with a first conductive type complementary to the second conductive type. The present invention further provides a method of forming the same.

Abstract: A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The high-voltage FinFET device includes: at least one fin structure, a working gate, a shallow trench isolation structure, and a first dummy gate. The fin structure includes a first-type well region and a second-type well region adjacent to the first-type well region, and further includes a first part and a second part. A trench is disposed between the first part and the second part and disposed in the first-type well region. A drain doped layer is disposed on the first part which is disposed in the first-type well region, and a source doped layer is disposed on the second part which is disposed in the second-type well region. The working gate is disposed on the fin structure which is disposed in the first-type well region and in the second-type well region.

Abstract: The present invention provides a metal oxide semiconductor (MOS) device, comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and apart thereof serves a source/drain of the MOS, wherein the epitaxial structure comprises: a first buffer layer with a second conductive type, a second buffer layer, and an epitaxial layer with a first conductive type complementary to the second conductive type. The present invention further provides a method of forming the same.

Abstract: A touch-sensing electrode structure includes multiple first electrodes and multiple second electrodes. Each of the first electrodes includes at least a first major part and a second major part, the first major part and the second major part cross over each other to form at least one interconnect section, the interconnect section includes a first connecting line extending in a first direction and a second connecting line extending in a second direction different to the first direction. Each of the second electrodes includes a plurality of electrode sections and third connecting lines, each of the third connecting lines is connected between two adjacent electrode sections, the third connecting lines extend in a third direction different to the first direction and the second direction, and at least one of the third connecting lines overlaps the interconnect section.