Patents by Inventor Tai-Yu Chen
Tai-Yu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240142878Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.Type: ApplicationFiled: January 10, 2024Publication date: May 2, 2024Inventors: Tai-Yu CHEN, Shang-Chieh CHIEN, Sheng-Kang YU, Li-Jui CHEN, Heng-Hsin LIU
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Patent number: 11967570Abstract: A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.Type: GrantFiled: March 4, 2022Date of Patent: April 23, 2024Assignee: MediaTek Inc.Inventors: Chia-Hao Hsu, Tai-Yu Chen, Shiann-Tsong Tsai, Hsing-Chih Liu, Yao-Pang Hsu, Chi-Yuan Chen, Chung-Fa Lee
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Publication number: 20240103378Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.Type: ApplicationFiled: November 30, 2023Publication date: March 28, 2024Inventors: Tai-Yu CHEN, Tzu-Jung PAN, Kuan-Hung CHEN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
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Patent number: 11906902Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.Type: GrantFiled: March 21, 2022Date of Patent: February 20, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tai-Yu Chen, Shang-Chieh Chien, Sheng-Kang Yu, Li-Jui Chen, Heng-Hsin Liu
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Publication number: 20230422525Abstract: A semiconductor package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die and a memory die are mounted on a top surface of the bottom substrate in a side-by-side fashion. The logic die may have a thickness not less than 125 micrometers. A connection structure is disposed between the bottom substrate and the top substrate around the logic die and the memory die to electrically connect the bottom substrate with the top substrate. A sealing resin fills in the gap between the bottom substrate and the top substrate and sealing the logic die, the memory die, and the connection structure in the gap.Type: ApplicationFiled: May 31, 2023Publication date: December 28, 2023Applicant: MEDIATEK INC.Inventors: Ta-Jen Yu, Wen-Chin Tsai, Isabella Song, Che-Hung Kuo, Hsing-Chih Liu, Tai-Yu Chen, Shih-Chin Lin, Wen-Sung Hsu
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Patent number: 11852978Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.Type: GrantFiled: June 7, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tai-Yu Chen, Tzu-Jung Pan, Kuan-Hung Chen, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
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Publication number: 20230384696Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Tai-Yu Chen, Sheng-Kang YU, Kia Tak Lam, Sagar Deepak Khivsara, Shang-Chieh Chien
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Publication number: 20230375949Abstract: A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.Type: ApplicationFiled: May 23, 2022Publication date: November 23, 2023Inventors: Cho-Ying LIN, Tai-Yu CHEN, Chieh HSIEH, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
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Patent number: 11822259Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.Type: GrantFiled: April 18, 2022Date of Patent: November 21, 2023Assignee: Taiwan Semiconductor Manufacturing Company, LTD.Inventors: Tai-Yu Chen, Sagar Deepak Khivsara, Shang-Chieh Chien, Kai Tak Lam, Sheng-Kang Yu
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Publication number: 20230367225Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.Type: ApplicationFiled: July 28, 2023Publication date: November 16, 2023Inventors: Tai-Yu CHEN, Sagar Deepak KHIVSARA, Kuo-An LIU, Chieh HSIEH, Shang-Chieh CHIEN, Gwan-Sin CHANG, Kai Tak LAM, Li-Jui CHEN, Heng-Hsin LIU, Chung-Wei WU, Zhiqiang WU
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Publication number: 20230333491Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.Type: ApplicationFiled: April 18, 2022Publication date: October 19, 2023Inventors: Tai-Yu Chen, Sagar Deepak Khivsara, Shang-Chieh Chien, Kai Tak Lam, Sheng-Kang Yu
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Publication number: 20230307316Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface. A semiconductor device is mounted on the top surface of the substrate. The semiconductor device has an active front surface directly facing the substrate, and an opposite rear surface. A vapor chamber lid is in thermal contact with the rear surface of the semiconductor device. The vapor chamber lid includes an internal vacuum-sealed cavity that stores a working fluid, and wick structures for recirculating the working fluid within the internal vacuum-sealed cavity.Type: ApplicationFiled: March 1, 2023Publication date: September 28, 2023Applicant: MEDIATEK INC.Inventors: Chin-Lai Chen, Wei-Che Huang, Wen-Sung Hsu, Chun-Yin Lin, Li-Song Lin, Tai-Yu Chen
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Publication number: 20230307421Abstract: A package-on-package includes a first package and a second package on the first package. The first package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die and an IC device are mounted on the bottom substrate in a side-by-side configuration. The logic die has a thickness not less than 125 micrometer. Copper cored solder balls are disposed between around the logic die and the IC device to electrically connect the bottom substrate with the top substrate. A sealing resin is filled into the gap between the bottom substrate and the top substrate and seals the logic die, the IC device, and the copper cored solder balls in the gap.Type: ApplicationFiled: May 30, 2023Publication date: September 28, 2023Applicant: MEDIATEK INC.Inventors: Ta-Jen Yu, Wen-Chin Tsai, Isabella Song, Tai-Yu Chen, Che-Hung Kuo, Hsing-Chih Liu, Shih-Chin Lin, Wen-Sung Hsu
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Patent number: 11768437Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.Type: GrantFiled: July 18, 2022Date of Patent: September 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tai-Yu Chen, Sagar Deepak Khivsara, Kuo-An Liu, Chieh Hsieh, Shang-Chieh Chien, Gwan-Sin Chang, Kai Tak Lam, Li-Jui Chen, Heng-Hsin Liu, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11762439Abstract: The present invention provides a method of dynamic thermal management applied to a portable device, wherein the method includes the steps of: obtaining a surface temperature of the portable device; obtaining a junction temperature of a chip of the portable device; and calculating an upper limit of the junction temperature according to the junction temperature and the surface temperature.Type: GrantFiled: December 17, 2019Date of Patent: September 19, 2023Assignee: MEDIATEK INC.Inventors: Pei-Yu Huang, Chih-Yuan Hsiao, Chiao-Pin Fan, Chi-Wen Pan, Tai-Yu Chen, Chien-Tse Fang, Jih-Ming Hsu, Yun-Ching Li
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Publication number: 20230280657Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.Type: ApplicationFiled: June 7, 2022Publication date: September 7, 2023Inventors: Tai-Yu CHEN, Tzu-Jung PAN, Kuan-Hung CHEN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
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Publication number: 20230284366Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.Type: ApplicationFiled: April 11, 2023Publication date: September 7, 2023Inventors: Tai-Yu CHEN, Cho-Ying LIN, Sagar Deepak KHIVSARA, Hsiang CHEN, Chieh HSIEH, Sheng-Kang YU, Shang-Chieh CHIEN, Kai Tak LAM, Li-Jui CHEN, Heng-Hsin LIU, Zhiqiang WU
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Publication number: 20230282625Abstract: A semiconductor package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die is mounted on a top surface of the bottom substrate. The logic die has a thickness of 125-350 micrometers. A plurality of copper cored solder balls is disposed between the bottom substrate and the top substrate around the logic die to electrically connect the bottom substrate with the top substrate. A sealing resin fills into the gap between the bottom substrate and the top substrate and sealing the logic die and the plurality of copper cored solder balls in the gap.Type: ApplicationFiled: February 9, 2023Publication date: September 7, 2023Applicant: MEDIATEK INC.Inventors: Ta-Jen Yu, Shih-Chin Lin, Tai-Yu Chen, Bo-Jiun Yang, Bing-Yeh Lin, Yung-Cheng Huang, Wen-Sung Hsu, Bo-Hao Ma, Isabella Song
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Publication number: 20230282604Abstract: A semiconductor package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die is mounted on a top surface of the bottom substrate in a flip-chip fashion. The logic die has a thickness of 125-350 micrometers. The logic die comprises an active front side, a passive rear side, and an input/output pad provided on the active front side. A plurality of copper cored solder balls is disposed between the bottom substrate and the top substrate around the logic die to electrically connect the bottom substrate with the top substrate. A sealing resin fills in the gap between the bottom substrate and the top substrate and seals the logic die and the plurality of copper cored solder balls in the gap.Type: ApplicationFiled: February 7, 2023Publication date: September 7, 2023Applicant: MEDIATEK INC.Inventors: Ta-Jen Yu, Tai-Yu Chen, Shih-Chin Lin, Isabella Song, Wen-Chin Tsai
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Publication number: 20230282626Abstract: A high-bandwidth package-on-package (HBPoP) structure includes a first package structure and a second package structure disposed over the first package structure. The first package structure includes a first package substrate, a semiconductor die, an interposer, and a molding material. The first package substrate is formed of a silicon and/or ceramic material. The semiconductor die is disposed over the first package substrate. The interposer is disposed over the semiconductor die and is formed of a silicon and/or ceramic material. The molding material is disposed between the first package substrate and the interposer and surrounds the semiconductor die.Type: ApplicationFiled: February 2, 2023Publication date: September 7, 2023Inventors: Tai-Yu CHEN, Bo-Jiun YANG, Tsung-Yu PAN, Yin-Fa CHEN, Ta-Jen YU, Bo-Hao MA, Wen-Sung HSU, Yao-Pang HSU