Abstract: Aspects of the invention provide a compact semiconductor device having a surge protection element, which can reliably protect against surge and is unlikely to be affected by manufacturing variation. By forming a parasitic n-p-n transistor on a guard ring, and adopting the parasitic n-p-n transistor as a surge protection element, it is possible to provide a compact semiconductor device having a surge protection element. Also, by adopting the parasitic n-p-n transistor as a surge protection element, it is possible to reduce the operating resistance in comparison with when using a parasitic n-p-n transistor as a surge protection element, and thus possible to improve the surge protection function. Further, by providing one surge protection element on the guard ring, rather than providing a surge protection element in each cell, it is possible minimize the effect of manufacturing variation (i.e., in-plane variation) on the surge protection function.

Abstract: An interlayer insulating film is disposed on a LOCOS oxide film covering an n-type drift region of a JFET. A polysilicon resistor having a spiral planar shape is disposed in the interlayer insulating film. A spiral wire in an outermost circumference of the polysilicon resistor is covered by a source electrode wire that extends on the interlayer insulating film. An end of the polysilicon resistor is electrically connected to a drain electrode wire. A ground terminal wire and a voltage division terminal wire are electrically connected to a spiral wire farther on an inner circumference side by one or more wires than the spiral wire. A portion farther on an inner circumference side than the spiral wire is used as a resistive element, and voltage for an input pad of the JFET is thereby divided to be taken out as a potential of the voltage division terminal wire.

Abstract: A semiconductor device includes a first conductive type first main electrode region, a first conductive type drift region which makes contact with the first main electrode region, a first conductive type second main electrode region which makes contact with the drift region, a second conductive type well region which is provided in a part of a surface layer portion of the drift region and to which a reference potential is applied, and a first conductive type potential extracting region which is provided in a surface layer portion of the well region and to which the reference potential is applied. The well region serves as a base region which controls a current flowing between the potential extracting region and the drift region. Thus, it is possible to provide a novel semiconductor device which is high in reliability while the increase of the chip size can be suppressed.

Abstract: An integrated circuit in which a voltage divider circuit is integrated comprises a first resistor, second resistor, control portion, switch, and switching portion. The first resistor and second resistor form a resistive voltage divider element for dividing a voltage obtained by rectifying an alternating-current voltage, or a direct-current voltage, supplied to a control portion. The switch is provided in series with the resistive voltage divider element, and passes or cuts off current passing through the resistive voltage divider element. The switching portion switches the switch so as to pass current during driving of the control portion, and cut off current during standby of the control portion.

Abstract: A semiconductor device includes a first conductive type first main electrode region, a first conductive type drift region which makes contact with the first main electrode region, a first conductive type second main electrode region which makes contact with the drift region, a second conductive type well region which is provided in a part of a surface layer portion of the drift region and to which a reference potential is applied, and a first conductive type potential extracting region which is provided in a surface layer portion of the well region and to which the reference potential is applied. The well region serves as a base region which controls a current flowing between the potential extracting region and the drift region. Thus, it is possible to provide a novel semiconductor device which is high in reliability while the increase of the chip size can be suppressed.

Abstract: An integrated circuit in which a voltage divider circuit is integrated comprises a first resistor, second resistor, control portion, switch, and switching portion. The first resistor and second resistor form a resistive voltage divider element for dividing a voltage obtained by rectifying an alternating-current voltage, or a direct-current voltage, supplied to a control portion. The switch is provided in series with the resistive voltage divider element, and passes or cuts off current passing through the resistive voltage divider element. The switching portion switches the switch so as to pass current during driving of the control portion, and cut off current during standby of the control portion.

Abstract: In a high voltage JFET, a p-floating region is provided in the surface layer of an n-drift region, thereby increasing the resistance R of the n-drift region and minimizing the voltage divided at a pn junction. This makes it possible to improve ESD capacity without increasing device size and without making the cutoff current smaller.

Abstract: In a high voltage JFET, a p-floating region is provided in the surface layer of an n-drift region, thereby increasing the resistance R of the n-drift region and minimizing the voltage divided at a pn junction. This makes it possible to improve ESD capacity without increasing device size and without making the cutoff current smaller.

Abstract: By configuring an ESD protection element of an NPN transistor (101), it is possible to reduce the area of the ESD protection element and reduce the voltage in a region in which the current increases sharply, and thus possible to increase ESD tolerance. Also, it is possible to provide a highly reliable semiconductor device wherein it is possible to flatten and smooth the surface of an upper layer pad electrode (16) by dividing a pad electrode (8) into a two-layer structure sandwiching an interlayer insulating film (15), and possible to increase the junction strength of a bonding wire, and suppress damage to underlying silicon layers when bonding.

Abstract: Aspects of the invention provide a compact semiconductor device having a surge protection element, which can reliably protect against surge and is unlikely to be affected by manufacturing variation. By forming a parasitic n-p-n transistor on a guard ring, and adopting the parasitic n-p-n transistor as a surge protection element, it is possible to provide a compact semiconductor device having a surge protection element. Also, by adopting the parasitic n-p-n transistor as a surge protection element, it is possible to reduce the operating resistance in comparison with when using a parasitic n-p-n transistor as a surge protection element, and thus possible to improve the surge protection function. Further, by providing one surge protection element on the guard ring, rather than providing a surge protection element in each cell, it is possible minimize the effect of manufacturing variation (i.e., in-plane variation) on the surge protection function.

Abstract: An integrated circuit (100) in which a voltage divider circuit is integrated comprises a first resistor (121), second resistor (122), control portion (130), switch (140), and switching portion (150). The first resistor (121) and second resistor (122) form a resistive voltage divider element for dividing a voltage obtained by rectifying an alternating-current voltage, or a direct-current voltage, supplied to a control portion (130). The switch (140) is provided in series with the resistive voltage divider element, and passes or cuts off current passing through the resistive voltage divider element. The switching portion (150) switches the switch (140) so as to pass current during driving of the control portion (130), and cut off current during standby of the control portion (130).

Abstract: An integrated circuit in which a voltage divider circuit is integrated comprises a first resistor, second resistor, control portion, switch, and switching portion. The first resistor and second resistor form a resistive voltage divider element for dividing a voltage obtained by rectifying an alternating-current voltage, or a direct-current voltage, supplied to a control portion. The switch is provided in series with the resistive voltage divider element, and passes or cuts off current passing through the resistive voltage divider element. The switching portion switches the switch so as to pass current during driving of the control portion, and cut off current during standby of the control portion.

Abstract: By configuring an ESD protection element of an NPN transistor (101), it is possible to reduce the area of the ESD protection element and reduce the voltage in a region in which the current increases sharply, and thus possible to increase ESD tolerance. Also, it is possible to provide a highly reliable semiconductor device wherein it is possible to flatten and smooth the surface of an upper layer pad electrode (16) by dividing a pad electrode (8) into a two-layer structure sandwiching an interlayer insulating film (15), and possible to increase the junction strength of a bonding wire, and suppress damage to underlying silicon layers when bonding.

Abstract: An integrated circuit (100) in which a voltage divider circuit is integrated comprises a first resistor (121), second resistor (122), control portion (130), switch (140), and switching portion (150). The first resistor (121) and second resistor (122) form a resistive voltage divider element for dividing a voltage obtained by rectifying an alternating-current voltage, or a direct-current voltage, supplied to a control portion (130). The switch (140) is provided in series with the resistive voltage divider element, and passes or cuts off current passing through the resistive voltage divider element. The switching portion (150) switches the switch (140) so as to pass current during driving of the control portion (130), and cut off current during standby of the control portion (130).

Abstract: A semiconductor device facilitates securing a high breakdown voltage and reducing a chip area thereof includes a low-potential gate driver circuit disposed on a semiconductor substrate, a high-breakdown-voltage junction edge-termination structure disposed in a peripheral portion of a high-potential gate driver circuit, disposed on the semiconductor substrate, for separating the low-potential gate driver circuit and the high-potential gate driver circuit from each other. A trench is disposed in the edge termination structure and between an n+-type source layer and an n+-type drain layer in a level shift circuit in the high-potential gate driver circuit, and an oxide film fills the trench to form a dielectric region in trench.