Abstract: A method utilizes an aluminum oxide support with a water-soluble neutral polymer adsorbed on a surface of the aluminum oxide support and is aimed to collect nucleic acids from a body fluid sample. The method includes a step of adsorbing nucleic acids on the support in the presence of a chaotropic agent and a step of adding a solution containing an anionic surfactant to the nucleic acid-adsorbed support.

Abstract: The present invention provides a novel pharmaceutical composition for treating and/or preventing cancer comprising, as an active ingredient, a polynucleotide derived from various miRNAs associated with cancer, a combination drug of the pharmaceutical composition and another antitumor agent, and a method for treating or preventing cancer in a subject having the cancer using the pharmaceutical composition or the combination drug. The present invention relates to a pharmaceutical composition for treating and/or preventing cancer comprising, as an active ingredient, a polynucleotide comprising the nucleotide sequence as set forth in SEQ ID NO: 1, or a nucleotide sequence comprising a substitution of one nucleotide in the nucleotide sequence as set forth in SEQ ID NO: 1 (wherein when at least a part of the polynucleotide is DNA, uracil in a region corresponding to the DNA in the nucleotide sequence is replaced with thymine).

Abstract: The present application provides a pharmaceutical composition for treating and/or preventing a cancer comprising, as an active ingredient, a polynucleotide derived from miRNA associated with the cancer, a combination drug of the pharmaceutical composition and another antitumor agent, and a method for treating or preventing a cancer in a subject having the cancer using the pharmaceutical composition or the combination drug.

Abstract: It is an object of the present invention to specify miRNA associated with the treatment and/or prevention of various cancer species, from among various miRNAs associated with cancer, and to provide a novel pharmaceutical composition for treating and/or preventing cancer which targets the specified miRNA. According to the present invention, provided are a pharmaceutical composition for treating and/or preventing cancer comprising, as an active ingredient, an antisense polynucleotide shown as hsa-miR4454, a combination drug comprising the aforementioned pharmaceutical composition and another antitumor agent, and a method for treating and/or preventing cancer, using the above-described pharmaceutical composition or combination drug.

Abstract: A method utilizes an aluminum oxide support with a water-soluble neutral polymer adsorbed on a surface of the aluminum oxide support and is aimed to collect nucleic acids from a body fluid sample. The method includes a step of adsorbing nucleic acids on the support in the presence of a chaotropic agent and a step of adding a solution containing an anionic surfactant to the nucleic acid-adsorbed support.

Abstract: The present invention provides a novel pharmaceutical composition for treating and/or preventing a cancer comprising, as an active ingredient, a polynucleotide derived from various miRNAs associated with cancer, a combination drug of the pharmaceutical composition and another antitumor agent, and a method for treating or preventing a cancer in a subject having the cancer using the pharmaceutical composition or the combination drug. The present invention relates to a pharmaceutical composition for treating and/or preventing a cancer comprising, as an active ingredient, a polynucleotide comprising the nucleotide sequence as set forth in SEQ ID NO: 1 or 2 (wherein when at least a part of the polynucleotide is DNA, uracil in a region corresponding to the DNA in the nucleotide sequence is replaced with thymine).

Abstract: The present application provides a pharmaceutical composition for treating and/or preventing a cancer comprising, as an active ingredient, a polynucleotide derived from miRNA associated with the cancer, a combination drug of the pharmaceutical composition and another antitumor agent, and a method for treating or preventing a cancer in a subject having the cancer using the pharmaceutical composition or the combination drug.

Abstract: It is an object of the present invention to specify miRNA associated with the treatment and/or prevention of various cancer species, from among various miRNAs associated with cancer, and to provide a novel pharmaceutical composition for treating and/or preventing cancer which targets the specified miRNA. According to the present invention, provided are a pharmaceutical composition for treating and/or preventing cancer comprising, as an active ingredient, an antisense polynucleotide shown as hsa-miR4454, a combination drug comprising the aforementioned pharmaceutical composition and another antitumor agent, and a method for treating and/or preventing cancer, using the above-described pharmaceutical composition or combination drug.

Abstract: The present invention provides a novel pharmaceutical composition for treating and/or preventing cancer comprising, as an active ingredient, a polynucleotide derived from various miRNAs associated with cancer, a combination drug of the pharmaceutical composition and another antitumor agent, and a method for treating or preventing cancer in a subject having the cancer using the pharmaceutical composition or the combination drug. The present invention relates to a pharmaceutical composition for treating and/or preventing cancer comprising, as an active ingredient, a polynucleotide comprising the nucleotide sequence as set forth in SEQ ID NO: 1, or a nucleotide sequence comprising a substitution of one nucleotide in the nucleotide sequence as set forth in SEQ ID NO: 1 (wherein when at least a part of the polynucleotide is DNA, uracil in a region corresponding to the DNA in the nucleotide sequence is replaced with thymine).

Abstract: The present invention provides a novel pharmaceutical composition for treating and/or preventing a cancer comprising, as an active ingredient, a polynucleotide derived from various miRNAs associated with cancer, a combination drug of the pharmaceutical composition and another antitumor agent, and a method for treating or preventing a cancer in a subject having the cancer using the pharmaceutical composition or the combination drug. The present invention relates to a pharmaceutical composition for treating and/or preventing a cancer comprising, as an active ingredient, a polynucleotide comprising the nucleotide sequence as set forth in SEQ ID NO: 1 or 2 (wherein when at least a part of the polynucleotide is DNA, uracil in a region corresponding to the DNA in the nucleotide sequence is replaced with thymine).

Abstract: An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an n? layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n? layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 ?m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm?3 or more and also the oxygen concentration of the n? layer in a position in contact with the p-type layer is set to less than 3×1017 cm?3.

Abstract: An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an n? layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n? layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 ?m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm?3 or more and also the oxygen concentration of the n? layer in a position in contact with the p-type layer is set to less than 3×1017 cm?3.

Abstract: A diode includes an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 ?m or more from the cathode electrode layer; a first semiconductor layer of the first conductivity type formed in a region between the anode electrode layer and the cathode electrode layer, and being in contact with the buffer layer of the first conductivity type; and a second semiconductor layer of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type. The carrier concentration in the first semiconductor layer is lower than the carrier concentration in the buffer layer. The carrier concentration in the buffer layer is less than 1×1015 cm?3.

Abstract: A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.

Abstract: A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.

Abstract: A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.

Abstract: A semiconductor device which can avoid increase of a conduction loss of an IGBT, secure a low noise characteristic and also reduce a switch loss. The switching device is of a trench gate type, in which a drift n? layer 110 is exposed to its main surface to a floating p layer 126 and to trench gates. In other words, the floating p layer 126 is provided within the drift n? layer 110 to be spaced from the trench gates.

Abstract: A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.

Abstract: A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking voltage at the time when the sheet carrier concentration of a fifth semiconductor region is enhanced.

Abstract: In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm?3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.