Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Abstract: A radiation-sensitive resin composition includes: a first polymer including a structural unit including an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. In the formula (1), A represents an oxygen atom or a sulfur atom; a sum of m and n is 2 or 3, wherein m is 1 or 2, and n is 1 or 2; X represents a single bond or a divalent organic group having 1 to 20 carbon atoms; and R1 represents a monovalent organic group including a fluorine atom.

Abstract: A radiation-sensitive resin composition includes: a first polymer including a structural unit which includes an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. R1 represents a monovalent organic group having 1 to 20 carbon atoms; R2 represents a monovalent organic group having 1 to 20 carbon atoms; X represents a divalent organic group having 1 to 20 carbon atoms; and Y represents a divalent hydrocarbon group having 1 to 20 carbon atoms. The divalent organic group represented by X, the monovalent organic group represented by R2, or both has a fluorine atom.

Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (al) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Abstract: A method for producing a semiconductor element includes applying a photoresist composition on a surface of an inorganic substrate to provide a resist film. The photoresist composition includes a polymer comprising an acid-labile group, and an acid generator. The resist film is exposed. The exposed resist film is developed with a developer solution containing an organic solvent to form a negative resist pattern. Ions are implanted into the inorganic substrate using the negative resist pattern as a mask. The photoresist composition preferably further contains a compound including a carboxy group, a sulfo group, a group represented by formula (i), a group capable of generating the carboxy group, the sulfo group or the group represented by the formula (i) by an action of an acid, a lactonic carbonyloxy group or a combination thereof, and having a molecular weight of no greater than 1,000.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The resist film is exposed. The exposed resist film is developed using a developer having an organic solvent content of 80 mass % or more. The photoresist composition includes a first polymer, a second polymer, and an acid generator. The first polymer is a base polymer and includes a first structural unit that includes an acid-labile group. The second polymer includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the first polymer. The second structural unit is represented by a formula (1) or a formula (2).

Abstract: A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Abstract: A method for producing a semiconductor element includes applying a photoresist composition on a surface of an inorganic substrate to provide a resist film. The photoresist composition includes a polymer comprising an acid-labile group, and an acid generator. The resist film is exposed. The exposed resist film is developed with a developer solution containing an organic solvent to form a negative resist pattern. Ions are implanted into the inorganic substrate using the negative resist pattern as a mask. The photoresist composition preferably further contains a compound including a carboxy group, a sulfo group, a group represented by formula (i), a group capable of generating the carboxy group, the sulfo group or the group represented by the formula (i) by an action of an acid, a lactonic carbonyloxy group or a combination thereof, and having a molecular weight of no greater than 1,000.

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer, a radiation-sensitive acid generator, and an acid diffusion controller which includes a compound having an amide group. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.

Abstract: A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Abstract: A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation.