Abstract: Data rate that can be supported by a photodetector can be limited by the aperture size of the photodetector. In some embodiments, the minimum aperture diameter can be about 30 um. This limitation is due, for example, to an inability of the optics to focus the beam to a smaller spot, and the mechanical tolerances of the assembly process. The techniques described in the present disclosure can reduce the optical spot size and improve on the mechanical tolerances that are achievable, thereby improving the photodetector and VCSEL manufacturing processes and systems. A photodetector or VCSEL system design with higher data rate and lower production cost can be achieved using the techniques described herein.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure.

Abstract: Optical devices and systems are depicted and described herein. One example of the optical system is disclosed to include a semiconductor layer, a first metal strip positioned adjacent to a first surface of the semiconductor layer, a second metal strip positioned adjacent to a second surface of the semiconductor layer that opposes the first surface of the semiconductor layer, and a third metal strip positioned adjacent to the second surface of the semiconductor layer. In one example, the first metal strip includes a first aperture positioned adjacent to a first active region in the semiconductor layer and second aperture positioned adjacent to a second active region in the semiconductor layer. The second metal strip overlaps the first metal strip in proximity with the first active region and not the second active region and the third metal strip is oriented substantially parallel with the second metal strip.

Abstract: A passive alignment system is provided that comprises one or more first meltable elements disposed on a surface, one or more second meltable elements disposed on a surface and one or more first standoff devices. The first and second meltable elements transition from first and second pre-molten states, respectively, to first and second molten states, respectively, when subjected to first and second temperatures, respectively. In the first molten state, the first meltable elements control relative alignment between the surfaces in first and second dimensions. In the second molten state, the second meltable elements and the first standoff devices control relative alignment between the surfaces in a third dimension. The passive alignment system is suitable for use in a parallel optical communications module to precisely passively align ends of a plurality of optical fibers or waveguides with respective light sources or light detectors of the module.

Abstract: An optical chip-scale package (CSP) is provided for use in a high channel density, high data rate communications system that has optical I/O ports and that is capable of being housed in a standard rackmount-sized box. The optical I/O ports comprise a bulkhead of multi-optical fiber (MF) adapters installed in a front panel of a switch box that houses the communications system. The adapters have first and second receptacles that are adapted to mate with first and second MF connectors, respectively. The communications system comprises a single-harness optical subassembly that uses a plurality of the optical CSPs that interface with a switch IC chip of the communications system to perform electrical-to-optical and optical-to-electrical conversion.

Abstract: A wavelength division multiplexing and demultiplexing (WDM) assembly is provided that is also capable of performing bidirectional communications. The WDM assembly comprises a WDM module and an adapter for use with the WDM module. The adapter has first and second receptacles in front and back ends thereof, respectively, that are configured to mate with a multi-fiber (MF) connector and with the WDM module, respectively. The MF connector holds ends of M optical fibers and the WDM module has M lenses. The WDM module holds ends of N optical fibers, where N is equal to or greater than 2M. When the MF connector and the WDM module are mated with the first and second receptacles, respectively, the ends of the M optical fibers held in the MF connector are in optical alignment with M lenses, respectively, disposed in the WDM module.

Abstract: A constructed photodetector, an optical receiver, and a receiver unit in an optical communication system are disclosed. One example of the disclosed constructed photodetector includes an optoelectronic element having an active area that converts light having a wavelength of interest into electrical signals and a substrate on a face that opposes the active area, where the substrate is non-transparent to light having the wavelength of interest. The constructed photodetector further includes a lens-chip that is at least partially transparent to light having the wavelength of interest, where the lens-chip includes a first side and an opposing second side, where the first side of the lens-chip includes an integrated lens, and where the second side of the lens-chip includes one or more electrical traces. The constructed photodetector further includes at least one connector that provides a physical and electrical connection between the optoelectronic element and the lens-chip.

Abstract: An optical communications system and a pluggable optical communications module for use in the system are provided. The configuration of the pluggable optical communications module is such that no optical turn in any light path is required. Embodiments of the optical communications module include an EMI shielding solution and an electrical interface for electrically interfacing an electrical subassembly (ESA) of the module with a system printed circuit board (PCB) in a way that obviates the need for an optical turn.

Abstract: A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die.

Abstract: A constructed photodetector, an optical receiver, and a receiver unit in an optical communication system are disclosed. One example of the disclosed constructed photodetector includes an optoelectronic element having an active area that converts light having a wavelength of interest into electrical signals and a substrate on a face that opposes the active area, where the substrate is non-transparent to light having the wavelength of interest. The constructed photodetector further includes a lens-chip that is at least partially transparent to light having the wavelength of interest, where the lens-chip includes a first side and an opposing second side, where the first side of the lens-chip includes an integrated lens, and where the second side of the lens-chip includes one or more electrical traces. The constructed photodetector further includes at least one connector that provides a physical and electrical connection between the optoelectronic element and the lens-chip.

Abstract: A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die.

Abstract: An optical mask can be made by providing a transparent mask substrate; depositing a first layer of opaque material, forming an aperture in the first layer; depositing a second layer of transparent material, depositing a third layer of transparent material; patterning the third layer to produce a disc-shaped region, heating the third layer until the disc-shaped region reflows into a lens-shaped region and cross-links, depositing a fourth layer, patterning the fourth layer to produce a cavity extending to the surface of the lens-shaped region, and dry etching the end of the cavity until the second layer develops a shape corresponding to the lens-shaped region.

Abstract: An optical communications system and a pluggable optical communications module for use in the system are provided. The configuration of the pluggable optical communications module is such that no optical turn in any light path is required. Embodiments of the optical communications module include an EMI shielding solution and an electrical interface for electrically interfacing an electrical subassembly (ESA) of the module with a system printed circuit board (PCB) in a way that obviates the need for an optical turn.

Abstract: An optical mask can be made by providing a transparent mask substrate; depositing a first layer of opaque material, forming an aperture in the first layer; depositing a second layer of transparent material, depositing a third layer of transparent material; patterning the third layer to produce a disc-shaped region, heating the third layer until the disc-shaped region reflows into a lens-shaped region and cross-links, depositing a fourth layer, patterning the fourth layer to produce a cavity extending to the surface of the lens-shaped region, and dry etching the end of the cavity until the second layer develops a shape corresponding to the lens-shaped region.

Abstract: An optical demultiplexing device includes an optics body, a mirror, optical filters, and opto-electronic detectors. The optics body has a fiber port configured to receive an end of an optical fiber, a reflective surface aligned with the fiber port, a substantially planar filter mounting surface, and a substantially planar mirror mounting surface. The filter mounting surface and the mirror mounting surface are parallel to one another and formed on the same side of the optics body as each other. The mirror is mounted on the mirror mounting surface, and the filters are mounted on the filter mounting surface. Each filter is transparent to a different wavelength and is interposed in an optical path between one of the opto-electronic detectors and the reflector.

Abstract: Known semiconductor wafer process technologies are used to manufacture an optical MUX/DeMUX with very precise dimensional control. The manufacturing process eliminates the need to polish optical surfaces of the MUX/DeMUX, which reduces the overall manufacturing costs and the amount of time that is required to manufacture the MUX/DeMUX.

Abstract: A parallel optical communications module is provided that passively simultaneously aligns ends of a plurality of optical fibers with respective light sources of the module. A fiber assembly of the module holds the ends of a plurality of optical fibers at precisely-defined locations relative to mating features of the assembly. An optical bench of the module has a plurality of light sources mounted thereon at precisely-defined locations relative to mating features of the optical bench. When the mating features of the fiber assembly are fully engaged with the mating features of the optical bench, the ends of the optical fibers are precisely aligned with the respective light sources with sufficient precision to meet tight tolerances associated with the smaller-diameter cores of single-mode optical fibers.

Abstract: A plurality of flip-chips, each having a plurality of optoelectronic elements formed therein, are flip-chip mounted on a top surface of a substrate that is comprised of a material that is transparent to the operating wavelength of the light produced by optoelectronic elements of the flip-chips. The combination of flip-chips comprises an array of precisely-aligned optoelectronic elements. When the substrate comprising the array of optoelectronic elements is mounted on a PCB, electrical contact pads disposed on the bottom and/or top surface of the substrate are in contact with the respective electrical contact pads disposed on the top surface of the PCB to electrically interconnect the PCB with the flip-chips. Mating features on the substrate that have been precisely positioned by semiconductor fabrication steps are disposed for mating with respective mating features of a multi-optical fiber ferrule device that have been precisely formed in the ferrule device at precise locations.

Abstract: Known semiconductor wafer process technologies are used to manufacture an optical MUX/DeMUX with very precise dimensional control. The manufacturing process eliminates the need to polish optical surfaces of the MUX/DeMUX, which reduces the overall manufacturing costs and the amount of time that is required to manufacture the MUX/DeMUX.